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Vishay Siliconix IRFZ40PBF-BE3
- Part No.:
- IRFZ40PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ40PBF-BE3.pdf
- Description:
- MOSFET N-CH 60V 50A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,844
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Product details
Overview
IRFZ40PBF-BE3 from Vishay Siliconix is a 60 V, 50 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.028 Ω RDS(on) at VGS = 10 V, 67 nC total gate charge, and 175 °C maximum junction temperature. It delivers fast switching, rugged avalanche capability (100 mJ), and low thermal resistance (RthJC = 1.0 °C/W) for high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFZ40PBF-BE3 datasheet, IRFZ40PBF-BE3 pinout, IRFZ40PBF-BE3 application, or IRFZ40PBF-BE3 equivalent, key selection criteria include its 60 V VDS, 50 A continuous drain rating at 25 °C, TO-220AB thermal performance, body diode recovery time (120–180 ns), and Pb-free/halogen-free compliance per Vishay S21-1045-Rev. C.
Technical Context
This third-generation planar vertical power MOSFET uses a ruggedized die design optimized for unclamped inductive switching (UIS) and high dV/dt immunity (4.5 V/ns). Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while low Qgd/Qg ratio (25/67 nC) supports clean turn-off in hard-switched topologies.
The device integrates an intrinsic body diode with 50 A continuous forward current rating and 2.5 V forward drop at 51 A, enabling synchronous rectification and freewheeling in buck and H-bridge configurations without external diodes. Thermal design leverages the TO-220AB's 0.50 °C/W case-to-sink resistance when mounted with grease on flat heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V bus applications with margin |
| RDS(on) @ VGS = 10 V | 0.028 Ω - Enables ≤1.5 W conduction loss at 7.5 A RMS in 12 V/50 A loads |
| ID Continuous @ TC = 25 °C | 50 A - Supports high-current motor phase legs and DC-DC primary switches |
| Qg Total | 67 nC - Determines gate driver current requirement (~1.3 A peak for 52 ns rise) |
| EAS | 100 mJ - Withstands single-pulse inductive energy up to 100 mJ without failure |
| TJ max | +175 °C - Allows operation in sealed enclosures or high-ambient industrial environments |
| dV/dt Rating | 4.5 V/ns - Resists false turn-on during fast transient noise in motor drives |
Pinout & Package
IRFZ40PBF-BE3 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration, and 1.0 °C/W junction-to-case thermal resistance. Mounting torque: 10 lbf·in (1.1 N·m) for M3 screw.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level signal; requires <100 nA leakage current drive |
| D (Drain) | High-side switch node | Connected to heatsink tab; carries full load current and withstands 60 V transients |
| S (Source) | Reference return path | Common source for gate drive and load return; defines local ground reference |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns immunity prevents spurious turn-on in noisy motor control environments |
| 175 °C operating temperature | Enables reliable operation in sealed industrial enclosures without forced air cooling |
| Fast switching (tr = 110 ns, tf = 92 ns) | Reduces switching losses in 20–100 kHz SMPS and PWM motor drives |
| Low RDS(on) × Qg figure of merit | 1.88 Ω·nC - Balances conduction and switching loss for medium-frequency power stages |
| Easy paralleling capability | Positive temperature coefficient of RDS(on) ensures current sharing across multiple devices |
Applications
| DC-DC Buck Converter | Brushed DC Motor Drive |
|---|---|
Use Scenario: 12 V input to 5 V/20 A output in telecom power supply. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology. Use Value: 0.028 Ω RDS(on) limits conduction loss to 4.5 W at 12 A, while 67 nC Qg enables efficient 100 kHz operation with standard gate drivers. |
Use Scenario: Full-bridge H-bridge controlling 24 V, 30 A brushed motor in industrial actuator. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg with integrated body diode freewheeling. Use Value: 2.5 V VSD at 51 A and 120–180 ns trr ensure low-loss reverse recovery during PWM commutation. |
| Uninterruptible Power Supply (UPS) | Inductive Load Switching |
Use Scenario: 48 V battery backup system delivering 1 kW to AC inverter stage. IC Role / Device Role / Timing Role: High-current DC bus switch with avalanche energy handling. Use Value: 100 mJ EAS protects against inductive kickback during fault conditions without snubbers. |
Use Scenario: Solid-state relay replacing electromechanical contactors in HVAC valve control. IC Role / Device Role / Timing Role: Single-pole, high-current load switch with fast turn-off. Use Value: 45 ns td(off) and 92 ns tf enable precise timing control and reduce arcing risk in inductive solenoid loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.018 Ω, Qg = 85 nC, TO-220FP package (shorter leads) | Lower RDS(on) but higher Qg; better for low-conduction-loss priority, less suitable for high-frequency switching | Select STP60NF06 when minimizing I²R loss dominates over switching loss and layout allows TO-220FP mounting. |
| IXTP50N06T | 60 V, 50 A, RDS(on) = 0.022 Ω, Qg = 52 nC, TO-220AB, enhanced avalanche rating (200 mJ) | Superior UIS robustness and lower Qg, but higher cost and limited distribution | Choose IXTP50N06T where repeated inductive switching stress exceeds 100 mJ per pulse or gate drive current is constrained. |
Compared with STP60NF06 and IXTP50N06T, the IRFZ40PBF-BE3 offers balanced conduction-switching trade-offs, industry-standard TO-220AB mechanical compatibility, and broad global availability-making it optimal for cost-sensitive, medium-frequency industrial power stages where 100 mJ avalanche margin suffices.
Availability
IRFZ40PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, uninterruptible power supplies, and inductive load switching requiring stable component supply and RoHS-compliant, halogen-free manufacturing.
Supply support for IRFZ40PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.
The IRFZ40PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for commercial-industrial power conversion where fast switching, ease of paralleling, and 175 °C operation are critical.
FAQ
What is the maximum continuous drain current for IRFZ40PBF-BE3 at 100 °C case temperature?
The IRFZ40PBF-BE3 supports 36 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated with actual heatsink design and ambient conditions. The IRFZ40PBF-BE3 maintains safe operation up to 175 °C junction temperature under this condition.
Does IRFZ40PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRFZ40PBF-BE3 integrates a monolithic body diode rated for 50 A continuous forward current and 200 A pulsed current. Key parameters include 2.5 V forward voltage at 51 A and 120–180 ns reverse recovery time at 25 °C. These values are measured with VGS = 0 V and dI/dt = 100 A/μs, making the IRFZ40PBF-BE3 suitable for freewheeling in buck and H-bridge topologies.
Is IRFZ40PBF-BE3 compatible with standard 10 V gate drivers?
Yes, the IRFZ40PBF-BE3 has a gate threshold voltage range of 2.0–4.0 V and achieves full enhancement at VGS = 10 V, making it fully compatible with standard TTL/CMOS and dedicated MOSFET gate drivers. Its 67 nC total gate charge requires ~1.3 A peak drive current for 52 ns rise time, well within capability of common drivers like TC4420 or UCC27531. The IRFZ40PBF-BE3 does not require logic-level (5 V) drive.
What is the avalanche energy rating of IRFZ40PBF-BE3, and how is it tested?
The IRFZ40PBF-BE3 is rated for 100 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, and IAS = 51 A. This rating is verified per Fig. 12 in the Vishay datasheet S21-1045-Rev. C and confirms ruggedness against inductive switching faults. The IRFZ40PBF-BE3 is not rated for repetitive avalanche.
How does the thermal resistance of IRFZ40PBF-BE3 impact heatsink selection?
The IRFZ40PBF-BE3 has RthJC = 1.0 °C/W (junction-to-case) and RthCS = 0.50 °C/W (case-to-sink with greased surface), enabling efficient heat transfer to external heatsinks. For 50 A continuous operation at 25 °C case temperature, junction temperature rise is ~50 °C above case-requiring a heatsink with ≤1.0 °C/W total thermal resistance (including interface and ambient). The IRFZ40PBF-BE3's TO-220AB package simplifies mechanical mounting and thermal interface design.
IRFZ40PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ40PBF-BE3 FAQ
1.How can I place an order for IRFZ40PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ40PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ40PBF-BE3 reliable?
The price and inventory of IRFZ40PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ40PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFZ40PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ40PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ40PBF-BE3?
IRFZ40PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ40PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ40PBF-BE3?
For technical support, including IRFZ40PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ40PBF-BE3 requirements.
6.How does Aetrix verify that IRFZ40PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFZ40PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ40PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFZ40PBF-BE3?
All IRFZ40PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ40PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ40PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFZ40PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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