Vishay Siliconix IRFZ48SPBF
- Part No.:
- IRFZ48SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ48SPBF.pdf
- Description:
- MOSFET N-CH 60V 50A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:44
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Product details
Overview
IRFZ48SPBF from Vishay Siliconix is a 60 V, 50 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.018 Ω RDS(on) at VGS = 10 V, 110 nC total gate charge, and 175 °C maximum junction temperature. It delivers high-current switching for DC-DC converters, motor drives, and uninterruptible power supplies where low conduction loss and fast turn-on/turn-off are critical.
For engineers reviewing the IRFZ48SPBF datasheet, IRFZ48SPBF pinout, IRFZ48SPBF application, or IRFZ48SPBF equivalent, this device is selected for high-efficiency, thermally demanding power stages requiring robust avalanche capability (100 mJ), fast diode recovery (120–180 ns), and stable operation up to 175 °C junction temperature.
Technical Context
This third-generation silicon power MOSFET uses advanced planar processing to minimize on-resistance per die area while maintaining ruggedness. Its D2PAK package enables low thermal resistance (RthJC = 0.8 °C/W) and high power dissipation (190 W at TC = 25 °C), supporting continuous drain current up to 50 A with linear derating beyond 100 °C.
The device integrates a fast-recovery body diode (trr = 120–180 ns, Qrr = 0.5–0.8 μC) and supports unclamped inductive switching with 290 A pulsed drain current and 4.5 V/ns peak diode dv/dt rating - enabling reliable operation in hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V nominal designs. |
| RDS(on) @ VGS = 10 V | 0.018 Ω - Enables <1 W conduction loss at 50 A, reducing heatsink requirements in high-current applications. |
| Qg max | 110 nC - Determines gate drive power and switching speed; requires ≥2 A peak gate driver for sub-100 ns transitions. |
| ID continuous @ TC = 25 °C | 50 A - Sustained output current capability when mounted on adequate PCB copper (1"² FR-4). |
| EAS | 100 mJ - Avalanche energy rating allows safe operation during inductive load turn-off without external clamping. |
| trr / Qrr | 120–180 ns / 0.5–0.8 μC - Fast body diode recovery minimizes switching losses and cross-conduction risk in synchronous rectification. |
| TJ max | 175 °C - Extended thermal range supports operation in sealed enclosures or high-ambient industrial environments. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with G and S on gull-wing leads, D on underside thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller outputs. |
| D (Drain) | High-side power terminal | Connected to PCB thermal pad for low-inductance, low-resistance heat path; carries full load current and withstands 60 V transients. |
| S (Source) | Reference and return terminal | Serves as power ground reference for gate drive and current sensing; internal source inductance 7.5 nH affects high-di/dt ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg figure of merit | 1.98 Ω·nC - Optimized trade-off between conduction and switching loss for 100–500 kHz SMPS designs. |
| 175 °C rated junction temperature | Enables operation in sealed industrial drives or automotive under-hood modules without derating at ambient up to 125 °C. |
| Fast body diode recovery (trr) | 120–180 ns - Reduces reverse recovery loss and EMI in flyback and LLC resonant converters. |
| Unclamped inductive switching (UIS) rating | 100 mJ - Eliminates need for external avalanche protection in motor phase-leg or solenoid driver circuits. |
| D2PAK thermal performance | RthJC = 0.8 °C/W - Allows direct mounting to heatsinks or large copper planes for >150 W power handling in compact layouts. |
Applications
| DC-DC Converters | Motor Drives |
|---|---|
|
Use Scenario: High-current buck converter in telecom power shelf delivering 12 V/40 A from 48 V input. IC Role / Device Role / Timing Role: Primary high-side switch operating at 200 kHz with synchronous rectification. Use Value: 0.018 Ω RDS(on) limits conduction loss to 28.8 W, while 110 nC Qg enables clean 50 ns turn-on with 2.5 A gate driver. |
Use Scenario: Half-bridge phase leg in 24 V BLDC motor controller for industrial automation. IC Role / Device Role / Timing Role: Low-side switching element handling 50 A peak phase current with PWM commutation. Use Value: 175 °C TJ rating sustains continuous operation at 105 °C ambient; fast trr prevents shoot-through during dead-time transitions. |
| Uninterruptible Power Supplies | Industrial Power Supplies |
|
Use Scenario: Inverter stage in 1 kVA online UPS converting 380 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Switching device in full-bridge topology with 50 kHz carrier frequency. Use Value: 100 mJ EAS absorbs inductive energy during short-circuit events; 4.5 V/ns dv/dt rating suppresses false triggering. |
Use Scenario: Primary-side switch in 600 W industrial AC-DC front-end with active PFC and LLC stage. IC Role / Device Role / Timing Role: High-efficiency switching transistor in LLC half-bridge resonant converter. Use Value: Low Coss (1300 pF) and Crss (190 pF) reduce capacitive losses and improve ZVS behavior above 200 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V, 55 A, RDS(on) = 0.014 Ω, Qg = 95 nC, TO-220 package | Higher current rating but through-hole only; lacks D2PAK's thermal pad and surface-mount compatibility | Preferred for prototyping or lower-volume through-hole designs where PCB space permits larger footprint |
| IXTP50N065T | 65 V, 50 A, RDS(on) = 0.015 Ω, Qg = 105 nC, TO-220 package with enhanced avalanche rating | Higher VDS margin and improved UIS robustness, but no surface-mount option or thermal pad | Selected when system requires 65 V blocking or extended avalanche endurance beyond 100 mJ |
Compared with STP55NF06L and IXTP50N065T, IRFZ48SPBF uniquely combines D2PAK surface-mount form factor, 0.8 °C/W junction-to-case thermal resistance, and 175 °C operation - making it optimal for high-power density, thermally constrained industrial PCBs where automated assembly and thermal management are critical.
Availability
IRFZ48SPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant sourcing.
Supply support for IRFZ48SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.
The IRFZ48SPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-current, high-temperature switching in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for IRFZ48SPBF at 100 °C case temperature?
The IRFZ48SPBF maintains a continuous drain current rating of 50 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its linear derating capability (1.3 W/°C) and robust thermal design, enabling sustained high-current operation without forced cooling in well-designed PCB layouts.
Does IRFZ48SPBF support logic-level gate drive?
No, IRFZ48SPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires VGS = 10 V to achieve the specified 0.018 Ω RDS(on). Driving it with 5 V logic will result in significantly higher on-resistance and conduction loss; a dedicated gate driver or level-shifter is recommended for microcontroller interfaces.
What is the avalanche energy rating of IRFZ48SPBF and how is it tested?
The IRFZ48SPBF has a single-pulse avalanche energy rating (EAS) of 100 mJ, measured under conditions of VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω, and IAS = 72 A. This rating validates its ability to absorb inductive energy safely during switching faults without catastrophic failure.
Can IRFZ48SPBF be used in synchronous rectification topologies?
Yes, IRFZ48SPBF is suitable for synchronous rectification due to its fast body diode recovery time (120–180 ns) and low Qrr (0.5–0.8 μC). These characteristics minimize reverse recovery loss and enable efficient operation in secondary-side switching of forward, LLC, and resonant converters - provided gate timing avoids shoot-through.
What is the thermal resistance from junction to case (RthJC) for IRFZ48SPBF?
The maximum junction-to-case (drain) thermal resistance (RthJC) for IRFZ48SPBF is 0.8 °C/W, as stated in the Thermal Resistance Ratings table. This low value is enabled by the D2PAK package's exposed drain pad and direct thermal path to the PCB, allowing effective heat transfer to external heatsinks or copper planes.
IRFZ48SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFZ48SPBF FAQ
1.How can I place an order for IRFZ48SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ48SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ48SPBF reliable?
The price and inventory of IRFZ48SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48SPBF is usually 5 days.
3.What payment methods are accepted for IRFZ48SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ48SPBF?
IRFZ48SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ48SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ48SPBF?
For technical support, including IRFZ48SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48SPBF requirements.
6.How does Aetrix verify that IRFZ48SPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ48SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48SPBF meets industry standards.
7.What is the process for return or replacement of IRFZ48SPBF?
All IRFZ48SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ48SPBF part is unused and in its original packaging.
Return procedure for IRFZ48SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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