Infineon Technologies IRL40T209ATMA1

Overview

IRL40T209ATMA1 from Infineon Technologies is a 40 V, 300 A (package-limited), N-channel Trench MOSFET in PG-HSOF-8 package with 0.59 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive circuits in battery-powered industrial inverters.

For engineers reviewing the IRL40T209ATMA1 datasheet, IRL40T209ATMA1 pinout, IRL40T209ATMA1 application, or IRL40T209ATMA1 equivalent, key selection criteria include its 0.3 °C/W junction-to-case thermal resistance, 179 nC total gate charge, 875 mJ single-pulse avalanche energy, and HSOF drain-tab layout enabling low-inductance PCB mounting in high-frequency DC/DC converters.

Technical Context

This device implements Infineon's StrongIRFET™ trench-gate process with enhanced avalanche ruggedness and fully characterized SOA, supporting operation up to 175 °C junction temperature. Its gate threshold voltage (1–2.4 V) enables 4.5 V logic-level drive compatibility while maintaining robust noise immunity.

The MOSFET features integrated body diode with 52 ns reverse recovery time and 79 nC Q_rr, making it suitable for synchronous rectification in resonant-mode power supplies and OR-ing applications where fast diode recovery reduces switching losses.

Key Specifications

Pinout & Package

PG-HSOF-8 (Heat Sink Overlaid Flatpack-8) with exposed drain tab on bottom side and 7-source terminals plus 1-gate terminal. The package uses solderable copper drain tab for primary thermal path and mechanical anchoring.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IRL40T211ATMA1 and IPB40N40N3 G, the IRL40T209ATMA1 offers optimal balance of ultra-low R_DS(on), fast switching (60 ns t_d(on)), and superior thermal performance via drain-tab mounting-making it preferred for compact, high-power-density motor and converter designs.

Availability

IRL40T209ATMA1 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across industrial automation, e-mobility, and telecom infrastructure programs.

Supply support for IRL40T209ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial MOSFETs, with global manufacturing and R&D centers.

The StrongIRFET™ product line targets high-current, high-ruggedness power switching in motor control and power conversion, emphasizing avalanche reliability, low R_DS(on) × Q_g, and thermally optimized packages like HSOF.

FAQ

What is the maximum continuous drain current for IRL40T209ATMA1 at 100 °C case temperature?

At T_C = 100 °C, the silicon-limited continuous drain current is 347 A (per Table 2), while the package-limited rating remains 300 A. Derating is required above 25 °C case temperature; the actual usable current depends on PCB copper area and airflow. For sustained 300 A operation, case temperature must be maintained ≤75 °C using ≥6 cm² of 70 µm copper on FR4.

Can IRL40T209ATMA1 be driven directly by a 3.3 V microcontroller GPIO?

No. With a minimum V_GS(th) of 1 V and typical turn-on threshold near 2.6 V plateau, 3.3 V drive yields only partial enhancement and high R_DS(on) (≥2.2 mΩ). A dedicated gate driver (e.g., IRS2007) supplying ≥4.5 V with ≥2 A peak current is required to achieve rated 0.59 mΩ conduction and fast 60 ns turn-on delay.

How does the HSOF-8 package differ from standard SO-8 in thermal performance?

The HSOF-8 replaces the plastic body with an exposed copper drain tab that serves as both electrical connection and primary thermal path. Its R_thJC is 0.3 °C/W (bottom) versus >3.0 °C/W for standard SO-8, enabling >10× higher power dissipation. Mounting requires soldering the tab to a large PCB copper pour-not just perimeter pads-as specified in Infineon's Package Outline document.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode has characterized t_rr = 52 ns and Q_rr = 79 nC at 100 A, making it viable for synchronous rectification in hard-switched converters up to 200 kHz. However, for ZVS or LLC resonant operation, its softness factor (Q_rr/I_F) is moderate; pairing with a low-Q_rr external diode is unnecessary but may further reduce EMI in sensitive RF environments.