Vishay Siliconix IRL520LPBF

Overview

IRL520LPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in I2PAK (TO-262) package, rated for 100 V V_DS, 9.2 A continuous drain current at T_C = 25 °C, and R_DS(on) = 0.27 Ω at V_GS = 5 V. It supports repetitive avalanche operation, features dynamic dV/dt rating up to 5.5 V/ns, and operates up to 175 °C junction temperature - commonly used in DC-DC converter synchronous rectification and motor drive half-bridge legs.

For engineers reviewing the IRL520LPBF datasheet, IRL520LPBF pinout, IRL520LPBF application, or IRL520LPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V gate bias, avalanche ruggedness (E_AS = 170 mJ), and thermal performance with R_thJC = 2.5 °C/W.

Technical Context

This MOSFET employs a third-generation trench-gate silicon process optimized for low on-resistance and fast switching. Its logic-level gate enables direct drive from microcontrollers or PWM controllers without level-shifting circuitry.

The device integrates a robust body diode with t_rr = 130–190 ns and Q_rr = 0.83–1.0 μC, supporting high-frequency hard-switched topologies. Thermal design is enabled by its low junction-to-case resistance and TO-262 through-hole mounting for high-power PCB dissipation.

Key Specifications

Pinout & Package

I2PAK (TO-262) is a through-hole power package with isolated tab (drain-connected), designed for high-current PCB mounting and mechanical robustness in industrial environments. The package provides low thermal resistance and accommodates large die sizes for optimized R_DS(on).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP12NK50ZFP and IRF520NPBF, the IRL520LPBF delivers superior efficiency in 5 V–24 V logic-driven power stages due to guaranteed R_DS(on) at 4–5 V, lower gate charge, and tighter V_GS(th) distribution - making it optimal for space-constrained, thermally sensitive, or microcontroller-integrated designs.

Availability

IRL520LPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply across industrial production cycles and long-lifecycle programs.

Supply support for IRL520LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRL520LPBF belongs to Vishay's logic-level power MOSFET product line, engineered for high-efficiency, low-voltage switching in battery-powered, automotive, and industrial control systems where gate drive simplicity and thermal resilience are critical.

FAQ

What is the maximum continuous drain current for IRL520LPBF at 100 °C case temperature?

The IRL520LPBF supports 6.5 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the I2PAK package and must be applied when heatsinking is constrained. At T_C = 25 °C, the rating is 9.2 A. Designers should verify junction temperature using R_thJC = 2.5 °C/W and actual power dissipation to ensure operation within the 175 °C maximum TJ limit.

Does IRL520LPBF have avalanche capability, and how is it rated?

Yes, the IRL520LPBF is repetitively avalanche rated with E_AR = 6.0 mJ and single-pulse E_AS = 170 mJ (tested per Fig. 12). These ratings are validated under defined conditions: V_DD = 25 V, L = 3.0 mH, R_G = 25 Ω, and I_AS = 9.2 A. The device's avalanche ruggedness enables reliable operation in inductive load switching without external snubbers, provided pulse width and duty cycle remain within datasheet limits.

What is the gate threshold voltage range for IRL520LPBF, and why does it matter for logic-level drive?

The IRL520LPBF has a V_GS(th) range of 1.0–2.0 V at I_D = 250 μA. This low, tightly controlled threshold ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO outputs - eliminating gate driver stages. Unlike standard MOSFETs requiring ≥3 V minimum for partial turn-on, the IRL520LPBF guarantees low R_DS(on) even at 4 V gate bias, making it truly logic-compatible.

Can IRL520LPBF be used in surface-mount designs, or is it strictly through-hole?

The IRL520LPBF uses the I2PAK (TO-262) package, which is a through-hole mount format with gull-wing leads and an isolated drain tab. It is not a surface-mount device like D2PAK (TO-263). While the footprint can be adapted for wave soldering or hand assembly, it is not compatible with standard SMT reflow processes. For SMT alternatives, consider Vishay's SiHL520L-GE3 - the same die in lead-free, halogen-free D2PAK packaging.

How does the body diode performance of IRL520LPBF compare to discrete Schottky diodes in synchronous rectification?

The IRL520LPBF's integrated body diode has V_SD = 2.5 V at I_S = 9.2 A and t_rr = 130–190 ns, which is slower and higher forward drop than most Schottky diodes. However, in synchronous rectification, the body diode conducts only briefly during dead-time - and is rapidly replaced by the channel when the gate is driven. Its Q_rr = 0.83–1.0 μC is well-controlled, minimizing voltage spikes. Thus, while not a replacement for Schottky in freewheel-only roles, it enables highly efficient synchronous operation when properly timed.