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Vishay Siliconix IRL520PBF-BE3
- Part No.:
- IRL520PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL520PBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 9.2A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,106
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Product details
Overview
IRL520PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 100 V drain-source voltage, 9.2 A continuous drain current at 25 °C, and 0.27 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation, and operates up to 175 °C junction temperature - ideal for DC-DC synchronous rectification and motor control stages.
For engineers reviewing the IRL520PBF-BE3 datasheet, IRL520PBF-BE3 pinout, IRL520PBF-BE3 application, or IRL520PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V, avalanche energy rating (EAS = 170 mJ), and thermal resistance (RthJC = 2.5 °C/W).
Technical Context
This MOSFET uses third-generation planar silicon technology optimized for ruggedness and low conduction loss. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, and its dynamic dV/dt rating (5.5 V/ns) supports stable operation in noisy high-speed switching environments.
The device integrates a robust body diode with trr = 130–190 ns and Qrr = 0.83–1.0 μC, enabling efficient freewheeling in inductive loads. Its 12 nC total gate charge and 7.1 nC gate-drain charge support fast, controllable switching with minimal driver effort.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands up to 100 V drain-to-source potential without breakdown; suitable for 48 V bus and 100 V industrial input stages. |
| RDS(on) @ VGS = 5 V | 0.27 Ω - Enables ≤ 2.3 W conduction loss at 9.2 A, reducing heatsink requirements in medium-power switching. |
| ID (continuous, TC = 25 °C) | 9.2 A - Maximum steady-state current at case temperature 25 °C; derates linearly to 6.5 A at 100 °C. |
| Qg | 12 nC - Total gate charge determines driver strength needed; compatible with low-current logic drivers (e.g., microcontroller GPIO with buffer). |
| EAS | 170 mJ - Single-pulse avalanche energy rating allows safe operation during inductive load turn-off transients without external snubbers. |
| TJ max | 175 °C - Extended junction temperature enables use in sealed enclosures or high-ambient industrial environments. |
| dV/dt (peak) | 5.5 V/ns - High peak diode recovery dV/dt tolerance prevents false triggering during body diode commutation. |
Pinout & Package
IRL520PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package features low thermal resistance (RthJC = 2.5 °C/W) and is designed for mounting to heatsinks using M3 or 6-32 screws with 1.1 N·m torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts logic-level voltage (1.0–2.0 V threshold); requires <12 nC charge for full enhancement; sensitive to ESD. |
| D (Drain) | High-side power output | Connected internally to metal tab; electrically isolated from mounting surface per TO-220AB mechanical spec; carries full load current and avalanche energy. |
| S (Source) | Power return / reference node | Common return path for load current; defines gate-source voltage reference; must be routed with low inductance to minimize switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on with 4–5 V gate drive, eliminating need for gate boosters in 3.3 V/5 V MCU-controlled power stages. |
| Repetitive avalanche rated | Rated for IAR = 9.2 A and EAR = 6.0 mJ under repetitive conditions - supports reliable operation in unclamped inductive switching. |
| Ruggedized device design | Dynamic dV/dt rating of 5.5 V/ns and 175 °C operation enable stable performance in harsh industrial motor drives and power supplies. |
| Low RDS(on) at low VGS | 0.38 Ω at VGS = 4 V - maintains low conduction loss even with marginal gate drive margin or supply droop. |
| Fast switching with low Qgd | Qgd = 7.1 nC - reduces Miller plateau time and improves controllability during hard-switching transitions. |
Applications
| DC-DC Synchronous Rectifier | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Used as low-side switch in non-isolated buck converters delivering 5–24 V at up to 10 A. IC Role / Device Role / Timing Role: Power MOSFET providing controlled conduction path during low-side switch phase; body diode handles freewheeling when high-side is off. Use Value: 0.27 Ω RDS(on) at 5 V gate drive minimizes conduction loss; 175 °C rating supports compact layout without forced air cooling. |
Use Scenario: Low-side switch in brushed DC motor H-bridge driving 12–48 V, 5–8 A loads. IC Role / Device Role / Timing Role: N-channel MOSFET switched by microcontroller PWM signal; paired with complementary high-side device. Use Value: Logic-level gate enables direct drive from 3.3 V/5 V MCU outputs; repetitive avalanche rating protects against back-EMF spikes during motor stall or reversal. |
| Industrial Power Supply Switch | LED Driver Switching Stage |
Use Scenario: Primary-side switching element in 100 W offline flyback or forward converter. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary winding; subjected to 100 V DC link and high dI/dt. Use Value: 170 mJ single-pulse avalanche energy absorbs leakage inductance spikes; TO-220AB package provides mechanical robustness and thermal stability. |
Use Scenario: Constant-current switching regulator for high-brightness LED strings (24–48 V, 1–3 A). IC Role / Device Role / Timing Role: PWM-controlled current sink; switches at 100–500 kHz to regulate average LED current. Use Value: Fast switching (tr = 64 ns, tf = 27 ns) and low Qg reduce switching losses; low RDS(on) maintains efficiency across dimming range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK50ZFP | 500 V VDS, 12 A ID, 0.48 Ω RDS(on) @ 10 V; Zener-protected gate; TO-220FP package (full-pack, no isolated tab) | Higher voltage rating suits 400 V AC-DC front ends; higher RDS(on) and gate voltage requirement increase drive complexity and conduction loss at 5 V. | Select when >100 V blocking is required and gate drive ≥10 V is available; not logic-level compatible. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 0.028 Ω RDS(on) @ 10 V; 71 nC Qg; TO-220AB package | Lower voltage rating limits use to ≤24 V systems; much higher current and lower on-resistance benefit high-current, low-voltage apps but require stronger gate drive. | Prefer for 12 V battery-powered motor drives where high current and low loss dominate; avoid in 48 V+ or logic-level-limited designs. |
Compared with STP12NK50ZFP and IRFZ44NPBF, the IRL520PBF-BE3 uniquely balances 100 V capability, logic-level drive, and moderate RDS(on) - making it optimal for 24–48 V industrial and embedded power stages where gate drive headroom is constrained and avalanche robustness is essential.
Availability
IRL520PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and industrial power supply switching requiring stable component supply, RoHS-compliant lead-free/halogen-free construction, and long-term production continuity.
Supply support for IRL520PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRL520PBF-BE3 belongs to Vishay's logic-level power MOSFET product line, engineered for industrial and embedded systems demanding robust switching, low gate drive voltage, and high-temperature operation without external level-shifting circuitry.
FAQ
What is the gate threshold voltage range for the IRL520PBF-BE3?
The IRL520PBF-BE3 has a gate-source threshold voltage (VGS(th)) range of 1.0 V to 2.0 V at TJ = 25 °C and ID = 250 μA. This logic-level specification ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs. The IRL520PBF-BE3 maintains usable channel enhancement down to ~1.0 V, supporting robust operation even with marginal gate drive margins or supply droop.
Is the IRL520PBF-BE3 suitable for avalanche operation?
Yes, the IRL520PBF-BE3 is explicitly rated for both single-pulse (EAS = 170 mJ) and repetitive avalanche (IAR = 9.2 A, EAR = 6.0 mJ). These ratings are validated per Vishay's test conditions (VDD = 25 V, L = 3.0 mH, Rg = 25 Ω) and allow safe operation during inductive turn-off transients without external clamping. The IRL520PBF-BE3 is designed for such stress in motor drives and relay drivers.
What is the thermal resistance from junction to case for the IRL520PBF-BE3?
The maximum junction-to-case (drain) thermal resistance (RthJC) for the IRL520PBF-BE3 is 2.5 °C/W. This value is measured from the silicon die to the TO-220AB metal tab (drain-connected), enabling accurate heatsink sizing. When mounted with thermal grease and proper torque (1.1 N·m), the IRL520PBF-BE3 can dissipate up to 60 W at TC = 25 °C, making it suitable for medium-power industrial applications.
Does the IRL520PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRL520PBF-BE3 integrates a monolithic body diode with typical forward voltage (VSD) of 2.5 V at IS = 9.2 A and TJ = 25 °C. Its reverse recovery time (trr) is 130–190 ns, and reverse recovery charge (Qrr) is 0.83–1.0 μC under specified test conditions (IF = 9.2 A, dI/dt = 100 A/μs). These values support efficient freewheeling in hard-switched topologies without excessive diode loss.
How does the IRL520PBF-BE3 differ from the standard IRL520PbF variant?
The IRL520PBF-BE3 is the halogen-free and lead-free version of the IRL520PbF, meeting Vishay's "BE3" material compliance standard (per doc# 99912). Both share identical electrical specifications, TO-220AB packaging, and thermal performance. The IRL520PBF-BE3 adds stricter environmental compliance for RoHS 2 and JEDEC J-STD-609 Category 3 (halogen-free), while maintaining full form-fit-function equivalence with the IRL520PbF.
IRL520PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 5.5A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL520PBF-BE3 FAQ
1.How can I place an order for IRL520PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL520PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL520PBF-BE3 reliable?
The price and inventory of IRL520PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL520PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRL520PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL520PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL520PBF-BE3?
IRL520PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL520PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL520PBF-BE3?
For technical support, including IRL520PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL520PBF-BE3 requirements.
6.How does Aetrix verify that IRL520PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRL520PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL520PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRL520PBF-BE3?
All IRL520PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL520PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL520PBF-BE3 part is unused and in its original packaging.
Return procedure for IRL520PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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