My Inquiry
My Account
Vishay Siliconix IRL530STRR
- Part No.:
- IRL530STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL530STRR.pdf
- Description:
- MOSFET N-CH 100V 15A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,298
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRL530STRR from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V VDS, 15 A continuous drain current at TC = 25 °C, and RDS(on) = 0.16 Ω at VGS = 5 V. It supports repetitive avalanche operation up to 15 A and operates up to 175 °C junction temperature-ideal for high-current DC-DC converter primary-side switching and motor drive half-bridge legs.
For engineers reviewing the IRL530STRR datasheet, IRL530STRR pinout, IRL530STRR application, or IRL530STRR equivalent, this part delivers verified logic-level gate drive compatibility with 4–5 V microcontroller outputs, low conduction loss in surface-mount high-power stages, and robust unclamped inductive switching capability per JEDEC-standard D2PAK thermal and mechanical design.
Technical Context
This third-generation power MOSFET uses planar silicon technology optimized for fast switching and ruggedized avalanche performance. Its gate threshold voltage (1.0–2.0 V) ensures reliable turn-on with standard logic-level drivers, while dynamic dV/dt rating (5.5 V/ns) and body diode recovery time (150–200 ns) support hard-switched topologies without external snubbing in moderate-frequency (<100 kHz) applications.
The device integrates a monolithic body diode with 2.5 V forward voltage at 15 A and 1.4 μC reverse recovery charge, enabling synchronous rectification replacement in flyback and buck converters. Thermal resistance RthJC = 1.7 °C/W enables high-power dissipation when mounted on copper-clad PCBs with thermal pad soldering per Vishay's recommended D2PAK footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 80 V DC with margin for transients in industrial power supplies. |
| RDS(on) @ VGS = 5 V | 0.16 Ω - Delivers ≤1.44 W conduction loss at 9 A, enabling compact thermal design in space-constrained PCBs. |
| Qg | 28 nC - Enables efficient gate driving with <100 mW driver power at 100 kHz switching frequency. |
| ID (continuous, TC = 25 °C) | 15 A - Sustains full-load current in motor H-bridge or SMPS output stages without derating under heatsinked conditions. |
| EAS | 290 mJ - Withstands unclamped inductive energy spikes in relay drivers or solenoid controls without failure. |
| TJ max | 175 °C - Allows operation in sealed enclosures or high-ambient environments like automotive engine bays. |
| dV/dt rating | 5.5 V/ns - Resists false triggering during fast voltage transients in noisy industrial bus environments. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts logic-level 4–5 V drive; 100 nA leakage ensures low standby current in battery-powered systems. |
| D (Drain) | High-side power terminal | Connected to internal die backside and thermal pad; must be soldered to large copper area for RthJC = 1.7 °C/W performance. |
| S (Source) | Reference/return path | Provides Kelvin connection for accurate current sensing; low-inductance layout critical for stable switching waveforms. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns fully on with 4 V VGS, eliminating need for gate boosters in 3.3 V/5 V MCU-based motor controllers. |
| Repetitive avalanche rated | Rated for 15 A IAR and 8.8 mJ EAR, enabling reliable operation in inductive load switching without external clamps. |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents spurious turn-on during fast-rising bus transients in industrial PLC I/O modules. |
| 175 °C maximum junction temperature | Supports extended lifetime in thermally constrained environments such as enclosed LED drivers or HVAC fan inverters. |
| Low Qgd/Qg ratio | Qgd = 14 nC of total Qg = 28 nC - improves Miller immunity and reduces switching instability in high-side configurations. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Half-Bridge |
|---|---|
|
Use Scenario: High-efficiency 24–48 V input buck converter delivering 5–12 V at up to 10 A for embedded computing rails. IC Role / Device Role / Timing Role: Main power switch controlling duty cycle; operates at 50–100 kHz with hard switching. Use Value: 0.16 Ω RDS(on) minimizes conduction loss, while 28 nC Qg enables low-driver-loss operation with standard gate drivers. |
Use Scenario: Bidirectional 24 V brushed motor control in robotic actuators with PWM speeds up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge; synchronized with complementary high-side for direction control. Use Value: Logic-level gate allows direct drive from STM32 GPIO; 15 A rating supports peak stall currents without derating. |
| Inductive Load Driver (Solenoid/Relay) | LED Constant-Current Dimming Stage |
|
Use Scenario: 24 V industrial solenoid valve driver requiring fast turn-off and transient suppression. IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs stored energy via intrinsic avalanche capability. Use Value: 290 mJ single-pulse avalanche energy eliminates need for external TVS or freewheeling diodes in cost-sensitive designs. |
Use Scenario: Analog-dimmable constant-current stage for high-brightness LED strings in architectural lighting. IC Role / Device Role / Timing Role: Linear-mode current regulator operating in analog dimming region below saturation. Use Value: 175 °C TJ max and low RDS(on) tolerance over temperature enable stable current regulation without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF530NPbF | VGS(th) = 2.0–4.0 V; RDS(on) = 0.16 Ω @ VGS = 10 V only; not logic-level rated. | Requires 10 V gate drive; unsuitable for direct 3.3 V/5 V MCU interface without level-shifting. | Select IRL530STRR when gate drive voltage is limited to ≤5 V and logic compatibility is mandatory. |
| STP16NF10 | RDS(on) = 0.18 Ω @ VGS = 10 V; VGS(th) = 2.0–4.0 V; no specified avalanche rating. | Lacks repetitive avalanche qualification; requires external protection for inductive loads. | Choose IRL530STRR where unclamped inductive switching reliability is required without added components. |
Compared with IRF530NPbF and STP16NF10, the IRL530STRR provides verified logic-level operation, guaranteed repetitive avalanche performance, and lower effective gate charge at 5 V-making it the preferred choice for compact, high-reliability, low-voltage-gate-driven power stages.
Availability
IRL530STRR is available at Aetrix Electronics and suitable for DC-DC converter primary switches, brushed DC motor half-bridges, and inductive load drivers requiring stable component supply across production lifecycles.
Supply support for IRL530STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRL530STRR belongs to Vishay's logic-level power MOSFET product line engineered for high-current, surface-mount switching in space-constrained power conversion and motor control systems.
FAQ
What is the maximum gate-source voltage rating for the IRL530STRR?
The IRL530STRR has a maximum gate-source voltage rating of ±10 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) during transient events or hot-swap conditions. This specification is confirmed in the Absolute Maximum Ratings table of Vishay document 91342, Rev. D.
Is the IRL530STRR suitable for use with 3.3 V microcontroller GPIOs?
The IRL530STRR is not reliably driven by 3.3 V GPIOs alone. Its gate threshold voltage range is 1.0–2.0 V, but full enhancement requires ≥4 V VGS to achieve RDS(on) = 0.22 Ω and ≥5 V for 0.16 Ω. For 3.3 V systems, a gate driver IC or level shifter is recommended to ensure robust switching in the IRL530STRR.
Does the IRL530STRR have an integrated body diode, and what are its key parameters?
Yes, the IRL530STRR includes an integral body diode rated for 15 A continuous source-drain current and 60 A pulsed current. Key parameters include VSD = 2.5 V at 15 A and TJ = 25 °C, reverse recovery time trr = 150–200 ns, and Qrr = 0.93–1.4 μC. These values are measured under specified test conditions in the Vishay 91342 datasheet.
What thermal pad layout is required for optimal performance of the IRL530STRR?
Optimal thermal performance requires soldering the exposed drain pad of the IRL530STRR to a minimum 0.420" × 0.355" (10.67 mm × 9.02 mm) copper area on FR-4 PCB, per Vishay AN826. Use thermal vias under the pad to inner ground planes to achieve RthJA ≤ 40 °C/W. Failure to implement this layout results in excessive junction temperature rise beyond rated limits.
How does the IRL530STRR's avalanche rating compare to standard MOSFETs without this specification?
The IRL530STRR is explicitly rated for repetitive avalanche energy (EAR = 8.8 mJ) and current (IAR = 15 A), unlike non-avalanche-rated MOSFETs that may fail catastrophically under unclamped inductive switching. This allows safe operation in relay/solenoid drivers without external snubbers-verified per test conditions in Figure 12 of the IRL530STRR datasheet.
IRL530STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL530STRR FAQ
1.How can I place an order for IRL530STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL530STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL530STRR reliable?
The price and inventory of IRL530STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530STRR is usually 5 days.
3.What payment methods are accepted for IRL530STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL530STRR?
IRL530STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL530STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL530STRR?
For technical support, including IRL530STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530STRR requirements.
6.How does Aetrix verify that IRL530STRR is sourced from the original manufacturer or authorized distributors?
All IRL530STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530STRR meets industry standards.
7.What is the process for return or replacement of IRL530STRR?
All IRL530STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRL530STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL530STRR part is unused and in its original packaging.
Return procedure for IRL530STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRL530STRR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
