Infineon Technologies IRL6297SDTRPBF

Overview

IRL6297SDTRPBF from Infineon Technologies is a dual common-drain N-channel power MOSFET in DirectFET® packaging, rated for 20 V V_DS, 3.8 mΩ R_DS(on) @ 4.5 V V_GS, and 140 A pulsed drain current. It delivers ultra-low on-resistance in a sub-SO-8 footprint (4.8 × 3.9 mm) with 0.6 mm profile, optimized for battery charge/discharge and input isolation switching in portable power systems.

For engineers reviewing the IRL6297SDTRPBF datasheet, IRL6297SDTRPBF pinout, IRL6297SDTRPBF application, or IRL6297SDTRPBF equivalent, key selection criteria include its dual-N-channel common-drain topology, 27 nC total gate charge, 80% improved thermal resistance via double-sided cooling, and compatibility with standard PCB assembly processes per AN-1035.

Technical Context

This device integrates two independent N-channel HEXFET® silicon dies in a single DirectFET® package with shared drain terminals and isolated source/gate connections. Its low 0.80 V gate threshold enables robust operation with 2.5 V logic-level drive, while the 5.4 mΩ R_DS(on) @ 2.5 V V_GS supports high-efficiency switching at low gate voltages.

The package enables simultaneous top-side (drain) and bottom-side (source pad) thermal paths, achieving 5.1 °C/W junction-to-case and 1.0 °C/W junction-to-PCB thermal resistance. Its 21 nC reverse recovery charge and 28 ns typical reverse recovery time support fast synchronous rectification and bidirectional current control in battery management circuits.

Key Specifications

Pinout & Package

IRL6297SDTRPBF uses the DirectFET® Small Can (SQ) package: 4.8 mm × 3.9 mm footprint, 0.6 mm height, copper substrate with exposed top-side drain and bottom-side source pads. Thermal performance relies on dual-sided cooling-top-side heatsinking to drain and bottom-side PCB copper pour to source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel power MOSFET applications.

Compared with IRL6297SDTRPBF, the IRL6217SPBF increases component count and PCB area but offers broader distributor availability, while the SIZ202DT-T1-GE3 trades 0.5 mm height and no top-heat-sink option for simplified bottom-side-only thermal management.

Availability

IRL6297SDTRPBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery accessories, and portable medical device power path designs requiring stable component supply, high-current switching, and ultra-low-profile packaging.

Supply support for IRL6297SDTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET® product line targets high-density power conversion and battery interface applications where thermal performance, footprint reduction, and logic-level drive are critical system constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRL6297SDTRPBF supports 58 A continuous drain current at T_A = 70°C with V_GS = 10 V, assuming proper PCB copper area and airflow. At lower gate drive (e.g., 4.5 V), derating applies due to increased R_DS(on); actual current must be verified using the normalized R_DS(on) vs. temperature curve and thermal resistance data.

Can this device be used in avalanche energy applications?

Yes-the IRL6297SDTRPBF is characterized for unclamped inductive switching with a maximum single-pulse avalanche energy (E_AS) of 300 mJ at T_J = 25°C. This enables robust operation in flyback or boost converters where inductive kickback occurs, provided peak current and pulse width remain within SOA limits shown in Figure 11.

How does the DirectFET® SQ package affect PCB layout for thermal management?

The SQ package requires dedicated top-side thermal relief: the exposed drain must connect to a heatsink or large copper pour with ≥6 thermal vias (0.3 mm diameter) to internal ground planes. Bottom-side source pads need ≥200 mm² of 2-oz copper with thermal reliefs to minimize R_θJ-PCB, as specified in AN-1035 for vapor-phase reflow profiles.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has 1.2 V forward voltage at 12 A and 28 ns typical reverse recovery time, making it suitable for synchronous rectification in DC-DC converters up to 1 MHz. However, for optimal efficiency, external Schottky diodes may be preferred in high-duty-cycle applications due to the diode's 21 nC Q_rr.