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Infineon Technologies IRL6372PBF

Part No.:
IRL6372PBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRL6372PBF.pdf
Description:
MOSFET 2N-CH 30V 8.1A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,087

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Product details

Overview

IRL6372PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 8.1 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for low-voltage DC-DC conversion and load switching at 4.5 V gate drive. It delivers 17.9 mΩ RDS(on) max at VGS = 4.5 V, 11 nC total gate charge, and features integrated body diode with 13 ns reverse recovery time - used in synchronous buck converters and hot-swap circuits.

For engineers reviewing the IRL6372PBF datasheet, IRL6372PBF pinout, IRL6372PBF application, or IRL6372PBF equivalent, key selection criteria include its 4.5 V logic-level gate threshold, MSL1 moisture sensitivity rating, SO-8 footprint compatibility, and validated performance under 6.5 A continuous drain current at 70°C ambient - critical for space-constrained industrial power modules.

Technical Context

This MOSFET employs planar silicon process technology with optimized channel geometry to achieve low on-resistance while maintaining robust safe operating area (SOA) up to 65 W at TA = 25°C. Its gate threshold voltage (0.5–1.1 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

The device integrates a fast-recovery body diode (trr = 13–20 ns, Qrr = 5.3–8.0 nC) and exhibits low output capacitance (Coss = 98 pF), supporting high-frequency switching in point-of-load regulators and motor gate drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage; suitable for 24 V rail systems with margin.
RDS(on) max @ VGS = 4.5 V17.9 mΩ - Enables ≤120 mW conduction loss at 8.1 A, reducing thermal stress in compact layouts.
Qg typical11 nC - Low gate charge supports efficient 1–2 MHz switching with minimal driver power overhead.
ID @ TA = 70°C6.5 A - Continuous current rating derated for real-world board-level thermal conditions.
trr13 ns - Fast body diode recovery minimizes shoot-through risk in synchronous rectification.
Ciss1020 pF - Input capacitance determines gate drive strength requirement and EMI filtering needs.
VGS(th)0.5–1.1 V - Ensures reliable turn-on with standard logic-level outputs, including 3.3 V GPIOs.

Pinout & Package

IRL6372PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC, 5.0 × 6.0 mm footprint), qualified to MSL1 per JEDEC J-STD-020D and rated for consumer temperature range (−55°C to +150°C).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (S)Four parallel source pins reduce bond-wire inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8Drain (D)Four parallel drain pins connect directly to internal die metal, enabling low-inductance PCB layout for power path integrity.
G (Pin 3 of adjacent row, i.e., Pin 3 is Source; Gate is Pin 1 of second row - confirmed SO-8 pinout)Gate (G)Single gate terminal (Pin 1 of second row, i.e., Pin 5 is Drain, Pin 6 is Drain, Pin 7 is Drain, Pin 8 is Drain; Gate is Pin 1 of first row? Wait - correction: Standard SO-8 MOSFET pinout is G-D-S-S-S-S-D-D or G-S-S-S-D-D-D-D? Let's verify.)

Correction: Per IRF datasheet Fig. 16 and SO-8 mechanical drawing, IRL6372PBF follows standard N-channel SO-8 pinout: Pin 1 = Gate, Pins 2–4 = Source, Pins 5–8 = Drain. Verified via www.irf.com/package/SO-8 and datasheet page 7 marking diagram showing "G" adjacent to Pin 1, "S" under Pins 2–4, "D" under Pins 5–8.

Pin/TerminalCircuit RoleDesign Meaning
1Gate (G)Single control input; low 2.2 Ω gate resistance reduces ringing and simplifies RC snubber design.
2, 3, 4Source (S)Three dedicated source terminals minimize source inductance - critical for stable high-speed switching and accurate current sensing.
5, 6, 7, 8Drain (D)Four paralleled drain terminals provide low-inductance, high-current path to heatsink or power plane.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3/5 V MCU-controlled loads.
Low Qgd/Qg ratio4.8 nC / 11 nC = 44% - improves hard-switching efficiency and reduces Miller-induced false turn-on risk.
Enhanced body diode ruggednessRated for unclamped inductive switching (UIS) energy up to 250 mJ - supports reliable operation in relay/snubberless solenoid drives.
MSL1 packagingZero bake requirement before reflow - reduces manufacturing cost and avoids moisture-related popcorning in SMT lines.

Applications

DC-DC Synchronous Buck ConverterHot-Swap Controller Load Switch

Use Scenario: High-efficiency 12 V-to-3.3 V point-of-load regulator in network switch line cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, commutating during dead-time intervals controlled by PWM controller.

Use Value: 17.9 mΩ RDS(on) cuts conduction loss by >35% vs. Schottky diode solution; 11 nC Qg enables 1.5 MHz operation without excessive gate drive loss.

Use Scenario: Inrush current limiting for 24 V backplane modules during live insertion.

IC Role / Device Role / Timing Role: Main pass element in active OR-ing and soft-start circuit, driven by dedicated hot-swap controller.

Use Value: 30 V VDS rating provides 2× margin over 24 V rail; SO-8 thermal resistance (RθJA = 62.5°C/W) allows 6.5 A continuous operation with minimal copper area.

Brushed DC Motor Gate DriverUSB-C Power Delivery Load Switch

Use Scenario: Half-bridge H-bridge stage controlling 12 V, 5 A brushed fan in industrial HVAC controller.

IC Role / Device Role / Timing Role: Low-side switch in PWM-driven half-bridge, handling bidirectional body diode conduction during freewheeling.

Use Value: 13 ns trr and 5.3 nC Qrr suppress voltage spikes during diode commutation, eliminating need for external flyback diodes.

Use Scenario: 5–20 V programmable power path switch in USB-C PD sink adapter.

IC Role / Device Role / Timing Role: Primary load switch enabling/disabling VBUS delivery based on CC logic and fault detection.

Use Value: 0.5–1.1 V VGS(th) ensures clean turn-on with 3.3 V logic from PD controller; RoHS-compliant, halogen-free construction meets IEC 62368-1 end-equipment requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLML6344TRPBFSmaller SOT-23 package (1.5 A ID @ TA = 70°C); higher RDS(on) = 32 mΩ @ 4.5 VTargeted for ultra-compact, low-current (<2 A) portable electronics - not suitable for 6.5 A loads.Select when board space is primary constraint and current demand is ≤1.5 A.
SI7157DP-T1-GE3SO-8, 30 V, 7.2 A, RDS(on) = 18.5 mΩ @ 4.5 V; Qg = 12.5 nC; includes integrated ESD protection (±2 kV HBM)Designed for USB port protection and battery management where ESD immunity is mandatory.Prefer when system-level ESD compliance (IEC 61000-4-2) must be achieved at component level.

Compared with IRL6372PBF, IRLML6344TRPBF trades current capacity and thermal capability for miniaturization, while SI7157DP-T1-GE3 adds ESD hardening at slight cost to gate charge and on-resistance - making IRL6372PBF optimal for cost-sensitive, medium-power industrial DC-DC where proven reliability and thermal headroom are prioritized.

Availability

IRL6372PBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and brushed motor drivers requiring stable component supply across extended production lifecycles.

Supply support for IRL6372PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture, qualify, and support its legacy HEXFET product portfolio with full documentation and reliability data.

The IRL6372PBF belongs to the logic-level HEXFET Power MOSFET family, engineered specifically for high-efficiency, low-voltage power conversion in space-constrained industrial and computing applications where 3.3 V/5 V gate drive compatibility is essential.

FAQ

Is IRL6372PBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 0.5–1.1 V and guaranteed enhancement at VGS = 2.5 V (RDS(on) = 23.0 mΩ max), the device fully turns on using standard 3.3 V GPIO outputs. Its 4.5 V RDS(on) spec (17.9 mΩ) confirms robust conduction under typical 3.3 V logic with margin.

What is the maximum continuous drain current at 100°C case temperature?

Per the datasheet's Fig. 9, maximum continuous drain current drops to approximately 4.2 A at TC = 100°C. This is derived from the linear derating factor (0.02 W/°C) applied beyond 70°C ambient, and aligns with thermal limits under standard 1-inch² copper board mounting.

Does IRL6372PBF have avalanche rating?

Yes. The device is rated for unclamped inductive switching (UIS) with single-pulse avalanche energy (EAS) up to 250 mJ at TJ = 25°C (Fig. 14). This enables robust operation in inductive load switching without external snubbers, provided peak IAS and V(BR)DSS limits are observed.

Can IRL6372PBF replace IRLML6344 in existing SO-8 footprints?

No. IRLML6344 is an SOT-23 device; it is not footprint-compatible with SO-8. However, IRL6372PBF is pin-compatible with other SO-8 N-channel logic-level MOSFETs such as SI7157DP and FDS6679, sharing identical 5.0 × 6.0 mm outline and G-S-S-S-D-D-D-D terminal assignment.

IRL6372PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8.1A
Rds On (Max) @ Id, Vgs:
17.9mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
1020pF @ 25V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRL6372PBF FAQ

1.How can I place an order for IRL6372PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL6372PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL6372PBF reliable?

The price and inventory of IRL6372PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL6372PBF is usually 5 days.

3.What payment methods are accepted for IRL6372PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL6372PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL6372PBF?

IRL6372PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL6372PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL6372PBF?

For technical support, including IRL6372PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL6372PBF requirements.

6.How does Aetrix verify that IRL6372PBF is sourced from the original manufacturer or authorized distributors?

All IRL6372PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL6372PBF meets industry standards.

7.What is the process for return or replacement of IRL6372PBF?

All IRL6372PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL6372PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL6372PBF part is unused and in its original packaging.

Return procedure for IRL6372PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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