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Infineon Technologies IRL6372TRPBF
- Part No.:
- IRL6372TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRL6372TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 8.1A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:12,134
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Product details
Overview
IRL6372TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 8.1 A N-channel enhancement-mode power MOSFET in SO-8 package, optimized for low-voltage synchronous buck converters and load switches. It delivers RDS(on) = 14.0 mΩ (typ) at VGS = 4.5 V, Qg = 11 nC (typ), and features integrated body diode with trr = 13 ns (typ), enabling high-efficiency DC-DC conversion in portable power management.
For engineers reviewing the IRL6372TRPBF datasheet, IRL6372TRPBF pinout, IRL6372TRPBF application, or IRL6372TRPBF equivalent, key selection criteria include gate threshold voltage (0.5–1.1 V), junction-to-ambient thermal resistance (62.5 °C/W), avalanche energy rating (250 mJ), SO-8 footprint compatibility, and RoHS-compliant MSL1 qualification for surface-mount reflow reliability.
Technical Context
This MOSFET operates as a low-side switch in DC-DC converters, leveraging its logic-level gate drive capability (VGS(th) ≤ 1.1 V) to interface directly with 3.3 V or 5 V controllers. Its 17.9 mΩ max RDS(on) at VGS = 4.5 V ensures minimal conduction loss at 6.5 A continuous drain current (TA = 70°C).
The device integrates a fast-recovery body diode (Qrr = 5.3–8.0 nC, trr = 13–20 ns) and exhibits low output capacitance (Coss = 98 pF) and reverse transfer capacitance (Crss = 68 pF), supporting high-frequency switching up to 1 MHz with reduced switching losses and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails with margin. |
| RDS(on) max @ 4.5 V | 17.9 mΩ - Conduction loss of ≤0.75 W at 6.5 A; enables compact thermal design on 1-inch² copper board. |
| Qg typ | 11 nC - Gate charge determines driver strength requirement; compatible with standard PWM controller gate drivers. |
| ID @ TA = 25°C | 8.1 A - Continuous current rating under free-air conditions; derates to 6.5 A at 70°C ambient. |
| trr | 13 ns (typ) - Fast body diode recovery minimizes shoot-through risk and reduces switching node ringing in synchronous rectification. |
| RθJA | 62.5 °C/W - Thermal resistance defines junction temperature rise; requires heatsinking or PCB copper area for >2 W dissipation. |
Pinout & Package
IRL6372TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pad for enhanced thermal performance. Pin 1 is gate (G), pins 2–4 and 6–8 are source (S), and pin 5 is drain (D). The package supports MSL1 moisture sensitivity and consumer-grade qualification per JEDEC JESD47F.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts logic-level drive (0.5–1.1 V threshold); requires <2.2 Ω series gate resistor for optimal switching. |
| 2, 3, 4, 6, 7, 8 | Source (S) | Power return path; all six pins internally connected to common source node; used for Kelvin sensing or low-inductance return routing. |
| 5 | Drain (D) | Main power output terminal; tied to exposed pad for thermal conduction to PCB; carries full load current and handles avalanche energy. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 1.1 V enables direct interface with 3.3 V microcontrollers without level-shifting circuitry. |
| Low RDS(on) at 4.5 V | 14.0 mΩ typical reduces conduction loss by >30% vs. standard 12 V gate MOSFETs in 5 V rail applications. |
| Fast body diode recovery | trr = 13 ns minimizes reverse recovery charge (Qrr = 5.3 nC), lowering switching loss in synchronous buck topologies. |
| MSL1 moisture sensitivity | Allows standard reflow without baking; supports high-yield automated assembly for consumer electronics manufacturing. |
Applications
| Server VRM Power Stage | USB-C PD Load Switch |
|---|---|
Use Scenario: High-current, high-frequency step-down conversion in server voltage regulator modules supplying CPU core power. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 500 kHz–1 MHz with precise dead-time control. Use Value: 14.0 mΩ RDS(on) limits I²R loss to <0.7 W at 8 A, reducing thermal stress on 6-layer PCB with internal ground plane. | Use Scenario: Inrush current limiting and hot-swap protection for USB-C Power Delivery ports delivering up to 20 V/5 A. IC Role / Device Role / Timing Role: Single-pole load switch controlled by system PMIC; activated within 10 µs of enable signal assertion. Use Value: 30 V VDS rating provides 100% margin over 20 V PD specification; 1.1 V VGS(th) ensures reliable turn-on from 3.3 V enable rail. |
| Industrial PLC I/O Module | Portable Medical Device Battery Switch |
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output stages driving 24 V solenoids and indicators. IC Role / Device Role / Timing Role: Low-side switch with integrated flyback diode handling inductive kickback during load deactivation. Use Value: 250 mJ single-pulse avalanche energy rating absorbs inductive energy without external snubber, simplifying BOM and layout. | Use Scenario: Isolation and protection between Li-ion battery pack and critical subsystems (e.g., ECG front-end) in handheld diagnostic equipment. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected battery disconnect switch with fast fault response (<100 ns). Use Value: 17.9 mΩ max RDS(on) keeps voltage drop below 100 mV at 5 A, preserving battery runtime and minimizing self-heating in sealed enclosure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | SO-8 package, same VDS (30 V), but lower ID (4.3 A) and higher RDS(on) (32 mΩ @ 4.5 V) | Not suitable for >5 A continuous loads; limited to low-power load switches or LED drivers | Select when space-constrained layout demands smaller die size and thermal budget allows higher conduction loss. |
| SI7157DP-T1-GE3 | SO-8, 30 V, RDS(on) = 12.5 mΩ @ 4.5 V, Qg = 12.5 nC, trr = 10 ns | Superior switching speed and lower RDS(on), but higher gate charge increases driver demand | Prefer for high-frequency (>1 MHz) designs where reduced conduction loss outweighs gate drive complexity. |
Compared with IRL6372TRPBF, IRLML6344TRPBF trades current capacity for smaller footprint, while SI7157DP-T1-GE3 improves efficiency at the cost of higher gate drive current-making IRL6372TRPBF the balanced choice for 6–8 A, 500 kHz–1 MHz industrial and computing power stages.
Availability
IRL6372TRPBF is available at Aetrix Electronics and suitable for server VRMs, USB-C PD load switches, and industrial PLC I/O modules requiring stable component supply across multi-year production cycles.
Supply support for IRL6372TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The HEXFET® product line was originally developed by International Rectifier and acquired by Infineon in 2015; it targets high-efficiency, high-reliability power conversion in computing, communications, and industrial systems using optimized trench-gate MOSFET technology.
FAQ
What is the maximum safe operating frequency for IRL6372TRPBF in a synchronous buck converter?
The device supports switching frequencies up to 1 MHz, validated by its 11 nC total gate charge, 5.3 nC switch charge (Qgs2 + Qgd), and 13 ns diode reverse recovery time. At 1 MHz, gate drive power remains below 100 mW with a 10 Ω resistor, and Crss = 68 pF ensures minimal Miller-induced oscillation under typical PCB parasitics.
Does IRL6372TRPBF require a gate resistor, and what value is recommended?
Yes-a series gate resistor is required to dampen ringing and control dV/dt. For 500 kHz operation with a 3.3 V controller, a 2.2 Ω resistor balances switching speed (tr = 13 ns, tf = 15 ns) and EMI suppression. Values below 1 Ω increase overshoot risk; above 10 Ω unnecessarily extends switching times and raises losses.
Can IRL6372TRPBF be used in avalanche mode, and what is its rated energy?
Yes-it is fully rated for unclamped inductive switching with EAS = 250 mJ at TJ = 25°C. This enables robust operation in relay-driving or motor-control applications where inductive kickback occurs. Derating is required above 25°C: EAS drops to ~100 mJ at 125°C junction temperature per Fig. 14.
How does the SO-8 package's exposed drain pad affect thermal performance?
The exposed drain pad (pin 5) provides direct thermal conduction from the silicon die to the PCB copper. With 1 inch² of 2 oz copper on the bottom layer, RθJA improves from 62.5 °C/W to ~40 °C/W, allowing 2.5 W continuous dissipation before exceeding 150°C junction limit-critical for high-current load switch applications.
IRL6372TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8.1A
- Rds On (Max) @ Id, Vgs:
- 17.9mOhm @ 8.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1020pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRL6372TRPBF FAQ
1.How can I place an order for IRL6372TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL6372TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL6372TRPBF reliable?
The price and inventory of IRL6372TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL6372TRPBF is usually 5 days.
3.What payment methods are accepted for IRL6372TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL6372TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL6372TRPBF?
IRL6372TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL6372TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL6372TRPBF?
For technical support, including IRL6372TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL6372TRPBF requirements.
6.How does Aetrix verify that IRL6372TRPBF is sourced from the original manufacturer or authorized distributors?
All IRL6372TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL6372TRPBF meets industry standards.
7.What is the process for return or replacement of IRL6372TRPBF?
All IRL6372TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL6372TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL6372TRPBF part is unused and in its original packaging.
Return procedure for IRL6372TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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