Vishay Siliconix IRL640

Overview

IRL640 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 200 V V_DS, 17 A continuous drain current at T_C = 25 °C, and 0.18 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRL640 datasheet, IRL640 pinout, IRL640 application, or IRL640 equivalent, key selection criteria include its logic-level gate drive (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, 66 nC total gate charge, and robust 580 mJ single-pulse avalanche energy rating.

Technical Context

The IRL640 integrates third-generation silicon technology with ruggedized design for high dV/dt immunity (5.0 V/ns) and reliable unclamped inductive switching. Its dynamic parameters-Q_g = 66 nC, Q_gd = 38 nC, and t_r/t_f = 83/52 ns-enable efficient hard-switching in SMPS topologies up to 100 kHz.

Thermally, it features R_thJC = 1.0 °C/W and R_thJA = 62 °C/W, supporting 125 W power dissipation at T_C = 25 °C. The integral body diode delivers t_rr = 310–470 ns and Q_rr = 3.2–4.8 μC, suitable for synchronous rectification and freewheeling in buck and half-bridge circuits.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 mm lead pitch, and 1.1 N·m mounting torque specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM50FP and IRFZ44NPbF, the IRL640 uniquely balances 200 V rating, true logic-level operation, and moderate R_DS(on)-making it optimal for 24–48 V industrial power stages where gate drive simplicity and avalanche ruggedness are prioritized over ultra-low on-resistance or extreme voltage headroom.

Availability

IRL640 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.

Supply support for IRL640 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRL640 belongs to Vishay's logic-level power MOSFET product line, engineered for cost-effective, rugged switching in medium-voltage industrial power conversion where gate drive simplicity and transient robustness are critical.

FAQ

What is the maximum continuous drain current for IRL640 at 100 °C case temperature?

The IRL640 supports 11 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual board layout, heatsink interface, and ambient conditions. For sustained 11 A operation, junction temperature must remain ≤150 °C, requiring R_thJA < 45.5 °C/W in the final system. The IRL640 datasheet specifies linear derating beyond 25 °C at 1.0 W/°C.

Does IRL640 require a gate resistor for safe operation?

Yes, a gate resistor is required to control dV/dt and prevent oscillation during switching. The IRL640 datasheet recommends R_g = 25 Ω for avalanche testing and R_g = 4.6 Ω for switching time characterization. Typical values range from 5 Ω to 47 Ω depending on drive strength and EMI requirements. Without a gate resistor, the IRL640's 66 nC Q_g and low gate input resistance (0.3–1.2 Ω) risk ringing, overshoot, and shoot-through in bridge configurations.

Is IRL640 suitable for use in a synchronous rectifier application?

Yes, the IRL640 is suitable for synchronous rectification in buck or forward converters operating up to ~100 kHz. Its body diode exhibits t_rr = 310–470 ns and Q_rr = 3.2–4.8 μC, enabling controlled commutation when driven with complementary gate signals. However, due to its 0.18 Ω R_DS(on), it is most effective above 5 A loads where conduction loss savings outweigh gate drive complexity. The IRL640's logic-level threshold also simplifies control timing relative to standard MOSFETs.

What is the avalanche energy rating of IRL640 and how is it tested?

The IRL640 is rated for 580 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, starting T_J = 25 °C, L = 3.0 mH, and R_g = 25 Ω, per Figure 12 in the datasheet. This rating validates its ability to absorb inductive energy during unclamped inductive switching events-such as motor phase current interruption-without failure. Repetitive avalanche is separately rated at 13 mJ per pulse, limited by junction temperature rise.

How does the IRL640's RDS(on) change with temperature and gate voltage?

The IRL640's R_DS(on) increases with junction temperature (normalized curve in Fig. 4 shows ~2× increase from 25 °C to 125 °C) and decreases with higher V_GS: 0.27 Ω at V_GS = 4 V and 0.18 Ω at V_GS = 5 V. This behavior is intrinsic to silicon MOSFET physics and confirms its suitability for logic-level drive. Designers must account for worst-case R_DS(on) at elevated temperature and minimum gate voltage to calculate conduction losses accurately in the IRL640's final application.