Vishay Siliconix IRL640PBF-BE3
- Part No.:
- IRL640PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL640PBF-BE3.pdf
- Description:
- MOSFET N-CH 200V 17A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:985
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Product details
Overview
IRL640PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 200 V VDS, 17 A continuous drain current at TC = 25 °C, and 0.18 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation, and ease of paralleling in DC-DC converters, motor drives, and power supplies.
For engineers reviewing the IRL640PBF-BE3 datasheet, IRL640PBF-BE3 pinout, IRL640PBF-BE3 application, or IRL640PBF-BE3 equivalent, key selection criteria include its logic-level gate drive (VGS(th) = 1.0–2.0 V), low RDS(on) at 4 V/5 V, 66 nC total gate charge, and robust 580 mJ single-pulse avalanche energy rating.
Technical Context
This MOSFET employs third-generation silicon technology optimized for ruggedness and low conduction loss. Its dynamic dV/dt rating (5.0 V/ns) and specified body diode recovery (trr = 310–470 ns, Qrr = 3.2–4.8 μC) support reliable operation in inductive switching circuits.
The device features integrated body diode with VSD = 2.0 V at IS = 17 A and is characterized for linear derating (1.0 W/°C) above 25 °C case temperature. Thermal resistance from junction-to-case is 1.0 °C/W, enabling high-power dissipation up to 125 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 160 V DC with margin for transients |
| RDS(on) @ VGS = 5 V | 0.18 Ω - enables ≤3.1 W conduction loss at 13 A continuous load |
| Qg | 66 nC - determines gate driver current requirement (~1.3 A peak for 50 ns rise) |
| ID continuous @ TC = 25 °C | 17 A - usable in medium-power SMPS and motor control stages |
| EAS | 580 mJ - withstands unclamped inductive energy without failure in flyback or solenoid drivers |
| tr/tf | 83 ns / 52 ns - supports switching frequencies up to ~500 kHz with controlled EMI |
| VGS(th) | 1.0–2.0 V - fully enhanced by standard 3.3 V or 5 V microcontroller GPIO |
Pinout & Package
IRL640PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 1.0 °C/W) and mechanical compatibility with common heatsinks using M3 screws.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink |
| Gate | Control electrode | High-impedance input requiring <100 nA leakage; sensitive to ESD; driven directly by logic-level MCU outputs |
| Source | Reference node for gate drive and current return | Common connection point for load return and gate drive reference; defines local ground in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.0 V ensures full enhancement with 3.3 V or 5 V controllers without level-shifting |
| Repetitive avalanche rated | Rated for IAR = 10 A and EAR = 13 mJ - enables reliable operation under transient overloads in industrial controls |
| Dynamic dV/dt immunity | 5.0 V/ns rating prevents false turn-on during high-speed voltage transients in half-bridge topologies |
| Low Qgd/Qg ratio | 38/66 ≈ 58 % - improves Miller immunity and reduces switching instability in hard-switched converters |
| RoHS-compliant & halogen-free | IRL640PBF-BE3 meets JEDEC J-STD-609A Class 1 moisture sensitivity and IPC-1752 material declaration requirements |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 200 W output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 100–500 kHz. Use Value: Low RDS(on) (0.18 Ω) minimizes conduction loss; fast tr/tf enables high-frequency operation with reduced magnetic size. | Use Scenario: H-bridge driver for 24 V, 10 A brushed motors in automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current; commutated at ≤20 kHz PWM. Use Value: Logic-level gate allows direct MCU GPIO drive; 580 mJ EAS absorbs inductive kickback during freewheeling. |
| AC-DC Auxiliary Supply | Industrial Solenoid Driver |
Use Scenario: 12 V/1 A auxiliary supply in offline SMPS using flyback topology. IC Role / Device Role / Timing Role: Primary-side switch operating in discontinuous conduction mode (DCM) at 65 kHz. Use Value: Repetitive avalanche rating protects against transformer leakage inductance spikes; low Qg eases gate driver design. | Use Scenario: 24 V solenoid control in pneumatic valves with 500 ms on-time and 10 A peak current. IC Role / Device Role / Timing Role: Single-ended switch enabling precise timing-controlled actuation with fast turn-off. Use Value: Body diode trr = 310–470 ns limits voltage overshoot during forced commutation; VSD = 2.0 V ensures low dropout during hold phase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF640NPbF | VGS(th) = 2.0–4.0 V; not logic-level; RDS(on) = 0.18 Ω only at VGS = 10 V | Requires 10 V gate drive; unsuitable for 3.3 V systems without buffer | Select IRL640PBF-BE3 when interfacing directly with low-voltage MCUs or FPGAs |
| STP20NM60FD | 600 V VDS; 0.30 Ω RDS(on) @ 10 V; faster tr (15 ns); no avalanche rating | Better for higher bus voltages but higher conduction loss at 200 V; no EAS guarantee | Choose STP20NM60FD only if 600 V rating is mandatory and avalanche robustness is secondary |
Compared with IRF640NPbF and STP20NM60FD, IRL640PBF-BE3 uniquely delivers logic-level operation with verified 580 mJ avalanche energy and 5.0 V/ns dV/dt immunity-critical for cost-sensitive, low-voltage industrial power stages where gate drive simplicity and transient robustness are prioritized over ultra-high voltage rating.
Availability
IRL640PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial solenoid control requiring stable component supply, RoHS/halogen-free compliance, and long-term production continuity.
Supply support for IRL640PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRL640PBF-BE3 belongs to Vishay's logic-level power MOSFET family engineered for industrial power conversion, motor control, and high-reliability switching where low gate drive voltage and avalanche tolerance are essential design requirements.
FAQ
What is the maximum continuous drain current for IRL640PBF-BE3 at 100 °C case temperature?
The IRL640PBF-BE3 supports 11 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated with actual heatsink performance and ambient conditions. Designers should consult Fig. 9 (Maximum Drain Current vs. Case Temperature) in the Vishay datasheet S21-1046-Rev. D to confirm safe operating area boundaries for their specific layout.
Does IRL640PBF-BE3 have a guaranteed avalanche energy rating?
Yes, IRL640PBF-BE3 is repetitively avalanche rated with EAR = 13 mJ and single-pulse EAS = 580 mJ (tested per Fig. 12). These values are measured under defined conditions: VDD = 50 V, L = 3.0 mH, Rg = 25 Ω, and starting TJ = 25 °C. The device's ruggedized construction enables reliable operation in inductive switching applications such as relay drivers and flyback converters where voltage transients occur.
Is IRL640PBF-BE3 compatible with 3.3 V microcontroller GPIOs?
Yes, IRL640PBF-BE3 is explicitly designed as a logic-level MOSFET with VGS(th) = 1.0–2.0 V and RDS(on) specified at VGS = 4 V and 5 V. At 3.3 V, it achieves partial enhancement (typically RDS(on) ≈ 0.27 Ω), sufficient for many medium-current applications. For full enhancement and minimal conduction loss, 5 V drive is recommended - easily achieved via buffered GPIO or dedicated gate driver.
What is the thermal resistance from junction to case for IRL640PBF-BE3?
The maximum junction-to-case (drain) thermal resistance RthJC for IRL640PBF-BE3 is 1.0 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper mounting with thermal grease on a flat heatsink surface. Actual thermal performance depends on interface quality, heatsink size, and airflow; designers should use this parameter with RthCS = 0.50 °C/W and system-level RthCA to calculate total junction-to-ambient path.
How does the body diode performance of IRL640PBF-BE3 compare to standard rectifiers?
The intrinsic body diode of IRL640PBF-BE3 has VSD = 2.0 V at IS = 17 A and trr = 310–470 ns, making it slower and higher-drop than Schottky diodes but suitable for synchronous rectification or freewheeling where active control is preferred. Its Qrr = 3.2–4.8 μC contributes to switching loss during turn-off; for high-frequency designs, external diode clamping or synchronous drive may be needed to manage recovery effects.
IRL640PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL640PBF-BE3 FAQ
1.How can I place an order for IRL640PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL640PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL640PBF-BE3 reliable?
The price and inventory of IRL640PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL640PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRL640PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL640PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL640PBF-BE3?
IRL640PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL640PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL640PBF-BE3?
For technical support, including IRL640PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL640PBF-BE3 requirements.
6.How does Aetrix verify that IRL640PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRL640PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL640PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRL640PBF-BE3?
All IRL640PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL640PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL640PBF-BE3 part is unused and in its original packaging.
Return procedure for IRL640PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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