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Vishay Siliconix IRL640STRR
- Part No.:
- IRL640STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL640STRR.pdf
- Description:
- MOSFET N-CH 200V 17A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,309
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Product details
Overview
IRL640STRR from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V VDS, 17 A continuous drain current at TC = 25 °C, and 0.18 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation, and is optimized for high-current DC-DC converters and motor control circuits requiring low gate drive voltage.
For engineers reviewing the IRL640STRR datasheet, IRL640STRR pinout, IRL640STRR application, or IRL640STRR equivalent, key selection criteria include its logic-level gate threshold (1.0–2.0 V), 66 nC total gate charge, 5.0 V/ns peak diode recovery dV/dt rating, and D2PAK thermal performance (RthJC = 1.0 °C/W) in surface-mount high-power designs.
Technical Context
This device belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for ruggedized operation under unclamped inductive switching stress. Its design integrates a low-inductance D2PAK package with internal source/drain inductances of 7.5 nH and 4.5 nH respectively, enabling stable high-dI/dt switching up to 150 A/μs in avalanche-rated conditions.
The IRL640STRR features a specified body diode with trr = 310–470 ns and Qrr = 3.2–4.8 μC at TJ = 25 °C, IS = 17 A, and dI/dt = 100 A/μs - critical for synchronous rectification and freewheeling path integrity in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 160 V DC with margin for transients in industrial power supplies |
| RDS(on) @ VGS = 5 V | 0.18 Ω - enables ≤3.1 W conduction loss at 13 A, suitable for thermally constrained PCB-mount applications |
| Qg | 66 nC - determines gate driver power requirement and switching speed in 100 kHz–500 kHz SMPS designs |
| ID (continuous, TC = 25 °C) | 17 A - delivers high current density in D2PAK without external heatsink in forced-air-cooled systems |
| EAS | 580 mJ - allows safe single-pulse energy absorption during inductive turn-off, reducing snubber complexity |
| dV/dt (diode recovery) | 5.0 V/ns - ensures robustness against parasitic turn-on in high-side configurations with fast-rising node voltages |
| TJ range | –55 to +150 °C - qualified for extended temperature operation in automotive under-hood and industrial motor drives |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC outline; recommended minimum pad layout per Vishay AN826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Logic-level compatible (VGS(th) = 1.0–2.0 V); requires ≤66 nC charge for full enhancement; sensitive to ESD |
| D (Drain) | High-side power terminal | Connected to exposed copper tab; primary thermal path to PCB; must be routed with low-inductance copper pour |
| S (Source) | Reference and return path | Common node for gate drive return and load current sensing; internal 7.5 nH inductance affects high-speed source degeneration |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.0 V (RDS(on) = 0.27 Ω), enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting |
| Repetitive avalanche rated | Rated for IAR = 10 A and EAR = 13 mJ under controlled pulse conditions - supports reliable operation in inductive load switching |
| Dynamic dV/dt immunity | Guaranteed 5.0 V/ns diode recovery dV/dt tolerance - prevents false turn-on in high-side half-bridge configurations |
| Low RthJC | 1.0 °C/W junction-to-case thermal resistance - enables >100 W power dissipation with minimal case-to-heatsink ΔT in properly mounted D2PAK |
| RoHS-compliant & halogen-free | Meets Vishay's material categorization per doc. 99912 - suitable for environmentally regulated industrial and consumer end equipment |
Applications
| Motor Drive Inverter Stage | Industrial DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-side switch in 24–48 V BLDC motor inverter with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Power switching element controlling phase current; operates in hard-switched mode with body diode freewheeling. Use Value: Low 0.18 Ω RDS(on) minimizes I²R losses at 15 A peak; 17 A continuous rating supports torque surge handling without derating. | Use Scenario: Primary-side switch in isolated 400 W flyback or forward converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power transistor switching at 100–250 kHz; subjected to VDS overshoot during turn-off. Use Value: 580 mJ single-pulse avalanche energy absorbs leakage inductance spikes; 200 V rating provides margin over 375 V reflected clamp voltage. |
| UPS Battery Disconnect Switch | Solar Charge Controller High-Side Switch |
Use Scenario: Solid-state battery disconnect in 48 V online UPS systems requiring fail-safe open-circuit protection. IC Role / Device Role / Timing Role: Normally-off power FET activated only during normal operation; must withstand sustained 48 V with zero gate drive during fault. Use Value: 25 μA max IDSS at VDS = 200 V ensures negligible standby leakage; –55 to +150 °C rating supports wide ambient storage and operation. | Use Scenario: High-side main switch in MPPT-enabled solar charge controller managing 60 V PV input to 24/48 V battery bank. IC Role / Device Role / Timing Role: Unidirectional power flow control; conducts bidirectionally during reverse-current protection events via body diode. Use Value: Body diode trr = 310–470 ns and Qrr = 3.2–4.8 μC limit reverse-recovery losses during synchronous rectification transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF640NPbF | Higher VGS(th) (2.0–4.0 V), higher RDS(on) (0.18 Ω @ VGS = 10 V only), not logic-level | Requires 10 V gate drive; unsuitable for 3.3 V MCU direct drive | Select IRL640STRR when logic-level compatibility and low-voltage gate drive are mandatory |
| STP20NM60FD | 600 V rating, lower RDS(on) (0.30 Ω @ VGS = 10 V), no logic-level rating, TO-220 package | Higher voltage capability but larger footprint and no surface-mount compatibility | Select IRL640STRR for D2PAK-compatible 200 V designs needing compact SMT layout and 5 V drive |
Compared with IRF640NPbF and STP20NM60FD, the IRL640STRR uniquely combines D2PAK packaging, 200 V rating, logic-level gate, and 17 A continuous current - making it optimal for space-constrained, low-voltage-gate industrial power stages where thermal performance and avalanche ruggedness are prioritized.
Availability
IRL640STRR is available at Aetrix Electronics and suitable for motor control inverters, industrial DC-DC converters, UPS battery disconnect circuits, and solar charge controllers requiring stable component supply across production lifecycles.
Supply support for IRL640STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.
The IRL640STRR belongs to Vishay's logic-level power MOSFET product line, designed specifically for high-efficiency, surface-mount power conversion systems operating from 3.3 V/5 V control interfaces and demanding robust avalanche performance.
FAQ
What is the maximum continuous drain current for IRL640STRR at 100 °C case temperature?
The IRL640STRR supports 11 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package under sustained high-temperature operation and must be validated with actual board-level thermal design including copper area and airflow.
Does IRL640STRR have a specified body diode reverse recovery time?
Yes, the IRL640STRR body diode has a reverse recovery time (trr) of 310–470 ns at TJ = 25 °C, IF = 17 A, and dI/dt = 100 A/μs. This parameter is critical for minimizing switching losses in freewheeling paths and is measured per the test circuit in Figure 12 of the Vishay datasheet S21-0932-Rev. E.
Is IRL640STRR RoHS-compliant and halogen-free?
Yes, IRL640STRR is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. The "-GE3" suffix in related part numbers (e.g., SiHL640STRR-GE3) explicitly denotes this compliance, and the IRL640STRR ordering variant carries identical environmental specifications per Vishay's cross-reference data.
What is the gate-source threshold voltage range for IRL640STRR?
The gate-source threshold voltage (VGS(th)) for IRL640STRR is 1.0 V to 2.0 V at VDS = VGS and ID = 250 μA. This logic-level range ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs, distinguishing it from standard-threshold MOSFETs like the IRF640 series.
Can IRL640STRR be used in avalanche-mode switching applications?
Yes, IRL640STRR is explicitly repetitive avalanche rated: IAR = 10 A and EAR = 13 mJ, with pulse width limited by maximum junction temperature. Its 580 mJ single-pulse avalanche energy rating further supports unclamped inductive switching in motor drive and relay driving applications without external snubbers.
IRL640STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL640STRR FAQ
1.How can I place an order for IRL640STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL640STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL640STRR reliable?
The price and inventory of IRL640STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL640STRR is usually 5 days.
3.What payment methods are accepted for IRL640STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL640STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL640STRR?
IRL640STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL640STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL640STRR?
For technical support, including IRL640STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL640STRR requirements.
6.How does Aetrix verify that IRL640STRR is sourced from the original manufacturer or authorized distributors?
All IRL640STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL640STRR meets industry standards.
7.What is the process for return or replacement of IRL640STRR?
All IRL640STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRL640STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL640STRR part is unused and in its original packaging.
Return procedure for IRL640STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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