Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRLD014

Part No.:
IRLD014
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
4-DIP (0.300", 7.62mm)
Datasheet:
AetrixIRLD014.pdf
Description:
MOSFET N-CH 60V 1.7A 4DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,249

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRLD014 from Vishay Siliconix is a logic-level N-channel power MOSFET in HVMDIP (4-pin DIP) package, rated for 60 V VDS, 0.20 Ω RDS(on) at VGS = 5 V, 1.7 A continuous drain current at 25 °C, and 175 °C maximum junction temperature - designed for low-cost, machine-insertable DC-DC converter and motor control stages requiring robust avalanche capability (490 mJ) and fast switching.

For engineers reviewing the IRLD014 datasheet, IRLD014 pinout, IRLD014 application, or IRLD014 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), dual-drain thermal path for 1 W dissipation, dV/dt ruggedness (4.5 V/ns), and HVMDIP stackability on 0.1" pitch PCBs.

Technical Context

The IRLD014 is a third-generation planar VDMOS device optimized for automatic insertion and thermal management via dual-drain configuration. Its gate threshold voltage (1.0–2.0 V) ensures full enhancement with 3.3 V or 5 V logic drivers, while its 8.4 nC total gate charge supports efficient high-frequency switching up to several hundred kHz.

Designed for unclamped inductive switching, the IRLD014 delivers 490 mJ single-pulse avalanche energy under defined test conditions (VDD = 25 V, L = 197 mH, IAS = 1.7 A). Its body diode exhibits 93–130 ns reverse recovery time and 0.34–0.65 μC Qrr, enabling moderate-speed freewheeling in flyback and half-bridge topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage in high-side or low-side switch configurations without breakdown.
RDS(on) @ VGS = 5 V 0.20 Ω - Enables ≤0.34 W conduction loss at 1.3 A, suitable for <1 W power stages.
ID (continuous, TA = 25 °C) 1.7 A - Rated current for ambient-cooled operation on standard PCBs without heatsink.
Qg 8.4 nC - Gate drive energy requirement determines minimum driver strength for 100–500 kHz switching.
EAS 490 mJ - Avalanche ruggedness allows safe operation during inductive turn-off transients in relay drivers or solenoid controls.
TJ(max) 175 °C - Extended thermal rating supports operation in sealed enclosures or high-ambient industrial environments.
dV/dt (peak diode recovery) 4.5 V/ns - Confirmed immunity to parasitic turn-on during fast commutation in noisy power systems.

Pinout & Package

HVMDIP (High-Voltage Mini Dual-In-Line Package): 4-pin through-hole package with dual drain leads (D1, D2) serving as parallel current paths and thermal conduction paths to PCB copper; 0.1" pin spacing; end-stackable; RoHS-compliant lead (Pb)-free finish per IRLD014PbF ordering code.

Pin/Terminal Circuit Role Design Meaning
D1, D2 Drain (dual terminals) Parallel connection reduces effective RDS(on) and provides low-inductance thermal path to PCB ground plane.
G Gate Logic-level input accepting 3.3 V/5 V CMOS/TTL drive; 100 nA leakage at ±10 V ensures stable bias.
S Source Reference node for gate drive and current sensing; internal source inductance LS = 6.0 nH affects switching waveform fidelity.

Key Features

Feature Design Value
Logic-level gate drive VGS(th) = 1.0–2.0 V enables direct interface with microcontrollers and low-voltage logic without level-shifting circuitry.
Dual-drain thermal design Two drain pins conduct heat into PCB copper, supporting 1 W power dissipation without external heatsink.
Dynamic dV/dt rating 4.5 V/ns peak diode recovery dV/dt prevents false turn-on during fast voltage transients in inductive loads.
175 °C operating temperature Extended junction rating allows deployment in automotive under-hood or industrial control cabinets with minimal derating.
End-stackable DIP format Standard 0.1" pin pitch and mechanical profile enable vertical stacking of multiple IRLD014 units for parallel current handling.

Applications

DC-DC Converter Switch Brushed DC Motor Driver

Use Scenario: Low-power synchronous buck converter stage delivering 3.3 V/1 A from 12 V input in space-constrained industrial sensor nodes.

IC Role / Device Role / Timing Role: Low-side power switch controlling inductor current; driven by PWM controller with 5 V gate output.

Use Value: 0.20 Ω RDS(on) minimizes conduction loss; 8.4 nC Qg enables efficient 300 kHz switching; dual drain improves thermal coupling to PCB.

Use Scenario: H-bridge half-bridge leg driving 12 V, 1 A brushed motor in HVAC damper actuator with stall protection.

IC Role / Device Role / Timing Role: High-current, low-voltage switching element handling bidirectional motor current and back-EMF clamping.

Use Value: 490 mJ EAS withstands inductive kick during abrupt stop; 175 °C TJ(max) accommodates intermittent stall heating.

Relay/Solenoid Driver LED Constant-Current Dimmer

Use Scenario: Solid-state replacement for electromechanical relay controlling 24 V AC/DC solenoids in PLC I/O modules.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) switch interfacing microcontroller GPIO to inductive load.

Use Value: Logic-level gate eliminates need for discrete driver transistor; 4.5 V/ns dV/dt rating suppresses false triggering from coil flyback noise.

Use Scenario: Linear LED dimmer stage regulating current to 350 mA string in architectural lighting with analog 0–10 V control.

IC Role / Device Role / Timing Role: Adjustable current sink using source-follower configuration with op-amp feedback.

Use Value: Low VGS(th) tolerance (1.0–2.0 V) ensures precise current setting across unit-to-unit variation; 1.6 V VSD body diode drop supports reverse polarity protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLD024PbF Higher VDS (100 V), higher RDS(on) (0.35 Ω @ 5 V), same HVMDIP package and logic-level gate. Better suited for 48 V bus systems; trade-off is higher conduction loss at 12–24 V. Select IRLD024PbF when system voltage exceeds 60 V but board layout and thermal constraints remain unchanged.
FQP30N06L TO-220 package, 60 V VDS, 0.075 Ω RDS(on) @ 10 V, not logic-level (VGS(th) = 1–2.5 V, but optimized for 10 V drive). Requires gate driver for reliable 3.3 V logic; higher current capacity (30 A) but no dual-drain thermal path. Choose FQP30N06L only if higher current (>2 A) and TO-220 mounting are acceptable, and gate drive voltage ≥5 V is available.

Compared with IRLD024PbF and FQP30N06L, the IRLD014 uniquely combines 60 V rating, true logic-level operation, dual-drain thermal management, and HVMDIP stackability - making it optimal for compact, low-voltage, manually or auto-inserted power switches where gate drive simplicity and PCB thermal performance are prioritized over raw current density.

Availability

IRLD014 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, relay replacements, and LED dimmers requiring stable component supply, long-term manufacturability, and RoHS-compliant through-hole assembly.

Supply support for IRLD014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRLD series targets cost-sensitive, high-volume power switching applications demanding logic-level drive, thermal efficiency in DIP packages, and proven avalanche performance - particularly in industrial controls, appliance power stages, and embedded power management.

FAQ

What is the maximum continuous drain current for IRLD014 at 100 °C ambient temperature?

The IRLD014 supports 1.2 A continuous drain current at TA = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the HVMDIP package with natural convection cooling. At higher ambient temperatures, further linear derating applies at 0.0083 W/°C beyond 100 °C, and actual current capability depends on PCB copper area and airflow. The IRLD014 must be mounted with both drain pins soldered to adequate copper pour to achieve this rating.

Does IRLD014 require a gate resistor for typical 5 V microcontroller drive?

Yes - a gate resistor is recommended for the IRLD014 even with 5 V microcontroller drive. While the IRLD014's logic-level gate enables turn-on with 5 V, its 8.4 nC total gate charge and 6.4 nC gate-drain charge make it susceptible to ringing and overshoot without controlled turn-on/off timing. A 10–25 Ω series gate resistor (as used in Vishay's switching test circuits) stabilizes transitions, reduces EMI, and prevents shoot-through in half-bridge configurations. The IRLD014 gate-source leakage remains below ±100 nA, ensuring stable bias once charged.

Can IRLD014 be used in parallel with another IRLD014 for higher current handling?

Yes - the IRLD014 is explicitly designed for end-stacking and parallel operation. Its HVMDIP package allows mechanical stacking of multiple units on 0.1" pin centers, and its positive RDS(on) temperature coefficient promotes current sharing. For reliable parallel use, ensure matched gate drive paths, symmetrical PCB layout, and shared source return to minimize imbalance. Each IRLD014 contributes ~1.7 A at 25 °C ambient, and the dual-drain configuration helps distribute thermal load across the board. The IRLD014's 175 °C TJ(max) supports coordinated thermal management in stacked arrangements.

What is the body diode forward voltage of IRLD014, and how does it affect freewheeling operation?

The IRLD014 body diode exhibits a forward voltage (VSD) of 1.6 V at TJ = 25 °C and IS = 1.7 A with VGS = 0 V. This relatively high VSD increases conduction loss during freewheeling compared to Schottky diodes, but enables robust reverse recovery (93–130 ns trr, 0.34–0.65 μC Qrr). In low-frequency (<50 kHz) inductive switching, the IRLD014 body diode provides adequate flyback path; for higher efficiency, external diode clamping is recommended. The IRLD014's body diode is integral to its safe operating area and avalanche rating.

Is IRLD014 suitable for automotive applications?

The IRLD014 is not AEC-Q101 qualified and is not recommended for safety-critical automotive applications such as engine control or braking systems. However, it is used in non-safety automotive subsystems including interior lighting, HVAC actuators, and accessory power distribution - provided ambient temperature, vibration, and lifetime requirements are validated per application. Its 175 °C TJ(max), 60 V VDS, and 490 mJ EAS meet many under-dash environmental demands, but the IRLD014 lacks automotive-grade qualification documentation and extended temperature screening. Always verify compliance with vehicle manufacturer specifications before deploying IRLD014 in automotive designs.

IRLD014 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
4-DIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.4 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.3W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
4-HVMDIP

IRLD014 FAQ

1.How can I place an order for IRLD014 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLD014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLD014 reliable?

The price and inventory of IRLD014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLD014 is usually 5 days.

3.What payment methods are accepted for IRLD014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLD014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLD014?

IRLD014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLD014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLD014?

For technical support, including IRLD014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLD014 requirements.

6.How does Aetrix verify that IRLD014 is sourced from the original manufacturer or authorized distributors?

All IRLD014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLD014 meets industry standards.

7.What is the process for return or replacement of IRLD014?

All IRLD014 units undergo pre-shipment inspection (PSI). If there is an issue with IRLD014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLD014 part is unused and in its original packaging.

Return procedure for IRLD014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRLD014 Tags

  • IRLD014
  • IRLD014 PDF
  • IRLD014 Datasheet
  • IRLD014 Specifications
  • IRLD014 Images
  • Vishay Siliconix
  • Vishay Siliconix IRLD014
  • Buy IRLD014
  • IRLD014 Price
  • IRLD014 Distributor
  • IRLD014 Supplier
  • IRLD014 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER