Vishay Siliconix IRLD014PBF

Overview

IRLD014PBF from Vishay Siliconix is a logic-level N-channel power MOSFET in HVMDIP (4-pin DIP) package, rated for 60 V V_DS, 0.20 Ω R_DS(on) at V_GS = 5 V, 1.7 A continuous drain current at 25 °C, and 175 °C maximum junction temperature - designed for low-cost, machine-insertable DC-DC converter and motor control switching stages.

For engineers reviewing the IRLD014PBF datasheet, IRLD014PBF pinout, IRLD014PBF application, or IRLD014PBF equivalent, key selection factors include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), fast switching (t_r = 110 ns), avalanche ruggedness (E_AS = 490 mJ), thermal performance in stacked DIP layouts, and body diode recovery (t_rr = 93–130 ns).

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for cost-sensitive, thermally constrained applications requiring automatic insertion and end-stackability. Its dual-drain configuration serves as a thermal link to the PCB, enabling up to 1 W power dissipation without heatsinking.

The IRLD014PBF features dynamic dV/dt immunity (4.5 V/ns), unclamped inductive switching capability, and gate charge parameters (Q_g = 8.4 nC, Q_gd/Q_gs = 6.4/2.6 nC) supporting efficient PWM operation in 20–100 kHz range converters and low-side load switches.

Key Specifications

Pinout & Package

IRLD014PBF uses the HVMDIP (High-Voltage Mini Dual-In-Line Package), a 4-pin through-hole package with dual drain leads (D1/D2) sharing internal connection to enhance thermal conduction to the PCB. The package is stackable and compatible with standard 0.1" pitch automated insertion equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLD024PBF and FQP30N06L, the IRLD014PBF offers the best balance of logic-level drivability, DIP manufacturability, and thermal performance in compact 1–2 A applications - making it preferred for cost-sensitive, auto-inserted, and thermally constrained designs where gate drive simplicity and board space are critical.

Availability

IRLD014PBF is available at Aetrix Electronics and suitable for DC-DC converters, low-side motor drivers, relay replacements, and LED current sinks requiring stable component supply, long-term obsolescence management, and consistent parametric performance across production lots.

Supply support for IRLD014PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRLD014PBF belongs to Vishay's logic-level power MOSFET product line, engineered for cost-effective, high-volume, auto-insertable power switching in industrial controls, consumer power supplies, and automotive body electronics.

FAQ

What is the maximum continuous drain current for IRLD014PBF at 100 °C ambient temperature?

The IRLD014PBF supports 1.2 A continuous drain current at TA = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the HVMDIP package with R_thJA ≤ 120 °C/W. At higher ambient temperatures, conduction loss and junction temperature must be verified using the normalized R_DS(on) vs. temperature curve (Fig. 4) and SOA plot (Fig. 8). For sustained 1.7 A operation, forced airflow or copper thermal relief is recommended.

Does IRLD014PBF have avalanche capability, and how is it specified?

Yes, the IRLD014PBF is rated for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 490 mJ, tested under V_DD = 25 V, I_AS = 1.7 A, and R_g = 25 Ω. This rating is validated per JEDEC JESD24-11 and applies to transient inductive energy absorption without device failure. It enables robust relay replacement and motor drive applications without external snubbers, provided pulse width and duty cycle remain within repetitive limits defined in Fig. 12c.

Can IRLD014PBF be driven directly from a 3.3 V microcontroller GPIO?

Yes, the IRLD014PBF can be driven directly from a 3.3 V microcontroller GPIO because its gate threshold voltage (V_GS(th)) is specified from 1.0 V to 2.0 V, and R_DS(on) is guaranteed at V_GS = 4.0 V (0.28 Ω) and V_GS = 5.0 V (0.20 Ω). At 3.3 V, the device operates in the linear region with higher R_DS(on), so design validation is required for target current and temperature rise - but full turn-on is achievable with 5 V logic or buffered 3.3 V drive.

What is the purpose of the dual drain pins on IRLD014PBF?

The dual drain pins (Pin 1 and Pin 4) on the IRLD014PBF are internally connected and serve two functions: (1) doubling the copper cross-section for improved current handling and reduced resistive heating, and (2) providing symmetrical thermal paths to the PCB for enhanced heat conduction. This dual-pin layout lowers effective thermal resistance and supports up to 1 W power dissipation in the HVMDIP package without external heatsinking - a key advantage over single-drain DIP alternatives.

How does the body diode performance of IRLD014PBF compare to standard rectifiers?

The IRLD014PBF body diode has a forward voltage (V_SD) of ≤1.6 V at 1.7 A and 25 °C, reverse recovery time (t_rr) of 93–130 ns, and recovered charge (Q_rr) of 0.34–0.65 μC. While slower and higher-V_F than dedicated Schottky diodes, its t_rr is significantly faster than general-purpose PN diodes - making it suitable for freewheeling in low-frequency (<50 kHz) PWM circuits. For high-frequency synchronous rectification, an external Schottky is still recommended.