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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLHM620TRPBF

Name: IRLHM620TRPBF
Brand: Infineon Technologies
SKU: IRLHM620TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLHM620TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRLHM620TRPBF.pdf

Description:: MOSFET N-CH 20V 26A/40A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:10,726

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Product details

Overview

IRLHM620TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, N-channel HEXFET® Power MOSFET in PQFN 3.3 × 3.3 mm package with 1.8 mΩ R_DS(on) @ 4.5 V, 40 A continuous drain current at T_C = 25°C, and 3.4°C/W junction-to-case thermal resistance. It serves as a high-efficiency synchronous rectifier or low-side switch in battery-powered DC motor inverters and portable power stages.

For engineers reviewing the IRLHM620TRPBF datasheet, IRLHM620TRPBF pinout, IRLHM620TRPBF application, or IRLHM620TRPBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V gate drive, MSL1 industrial qualification, RoHS-compliant PQFN package, and validated performance in thermally constrained, high-current switching nodes.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low-voltage, high-current switching. Its 20 V V_DS rating and 1.8 mΩ R_DS(on) @ 4.5 V enable efficient operation in 3.3–12 V input systems where gate drive is limited to logic-level voltages. The device features an integrated body diode with 41 ns reverse recovery time and 68 nC Q_rr, supporting synchronous rectification without external diode replacement.

Thermal design is enabled by direct bottom-side copper thermal pad contact to PCB, delivering 3.4°C/W R_θJC(bottom) and enabling >37 W power dissipation at T_C = 25°C. Its 52 nC total gate charge and 25 ns rise time support high-frequency PWM control up to 1 MHz in compact DC-DC and motor drive topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V nominal bus systems with margin for transients and ripple.
R_DS(on) max @ 4.5 V	2.5 mΩ - Enables <100 mW conduction loss at 20 A, critical for battery runtime extension.
I_D continuous @ T_C = 25°C	40 A - Sustains high pulsed load currents in motor H-bridge low-side legs without derating.
Q_g typical	52 nC - Matches standard gate drivers (e.g., IR2110, UCC27531) without requiring oversized drive capability.
R_θJC(bottom)	3.4°C/W - Allows direct thermal coupling to inner-layer copper planes, reducing board-level hot spots.
V_GS(th)	0.5–1.1 V - Ensures reliable turn-on with 1.8 V/3.3 V microcontroller GPIOs and eliminates need for level shifters.
t_r/t_f	25 ns / 37 ns - Supports clean switching at ≥500 kHz PWM frequencies with minimal overlap loss.

Pinout & Package

PQFN 3.3 × 3.3 mm Outline "B" package with exposed thermal pad on bottom side and 8-pin layout. Pin 1 identifier marked by notch or dot; leads are lead-free, RoHS-compliant, and MSL1 rated.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four drain terminals connected to internal die backside metal, providing low-inductance path to PCB ground plane.
Center Pad	Drain (D)	Exposed copper thermal pad tied directly to drain potential; must be soldered to large PCB copper area for thermal management.
Pin 3 (marked)	Gate (G)	Single dedicated gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation.

Key Features

Feature	Design Value
Low R_DS(on) @ 4.5 V	1.8 mΩ typ. - Reduces conduction losses by >30% vs. legacy 30 mΩ logic-level MOSFETs at same current.
Industry-standard pinout	Compatible with PQFN 3.3 × 3.3 footprint used by competing vendors - enables multi-source supply chain flexibility.
MSL1 industrial qualification	Rated for unlimited floor life at ≤30°C/60% RH - eliminates bake requirements and supports JIT assembly.
RoHS & halogen-free	No Pb, Br, or Cl compounds - meets IPC-1752A material declaration requirements for global OEM compliance.
Low-profile height	≤1.0 mm max - Enables stacking of dual-sided PCBs and integration into space-constrained handheld enclosures.

Applications

Battery-Powered DC Motor Inverter

Secondary-Side Synchronous Rectifier

Use Scenario: 12 V brushed/BLDC motor driver in cordless power tools with 20–30 A peak load and 10 kHz PWM.

IC Role / Device Role / Timing Role: Low-side N-channel switch in half-bridge topology, driven by gate driver with 4.5 V output.

Use Value: 2.5 mΩ R_DS(on) limits I²R loss to <1.5 W at 25 A, extending battery life and reducing heatsink mass.

Use Scenario: 5 V/3 A isolated DC-DC converter in USB-C PD adapter, replacing Schottky diode on secondary side.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by transformer auxiliary winding or controller-driven timing signal.

Use Value: 1.2 V V_SD body diode forward drop and 41 ns t_rr enable >95% efficiency at full load, exceeding discrete diode performance.

High-Density Load Switch

USB Power Delivery Switching Node

Use Scenario: 5 V/10 A hot-swap power rail in industrial IoT gateway with strict thermal budget (<40°C ambient).

IC Role / Device Role / Timing Role: Single-pole load switch with integrated gate driver and current sensing feedback path.

Use Value: 3.4°C/W R_θJC allows full 10 A current with only 34°C junction rise above PCB temperature - no heatsink required.

Use Scenario: Input protection switch in 20 V/5 A USB PD 3.0 sink port with fast overcurrent response.

IC Role / Device Role / Timing Role: Low-side current-limiting switch with fast turn-off (t_f = 37 ns) to meet USB PD fault timing specs.

Use Value: 52 nC Q_g ensures sub-1 µs gate discharge using standard 1 Ω pull-down resistor - meets <2 µs fault clearance requirement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 3.5 mΩ @ 4.5 V; smaller 1.6 × 1.6 mm package; lower I_D = 4.3 A	Suitable only for <5 A loads; insufficient thermal capacity for motor or rectifier use	Select when board space is primary constraint and current ≤4 A.
DMN2020LSD-13	R_DS(on) = 2.2 mΩ @ 4.5 V; same PQFN 3.3 × 3.3 package; higher Q_g = 65 nC	Requires stronger gate drive; slightly higher switching loss at >200 kHz	Select when tighter R_DS(on) tolerance needed and gate driver can deliver >1 A peak current.

Compared with IRLHM620TRPBF, the IRLML6344TRPBF trades current handling and thermal robustness for miniaturization, while the DMN2020LSD-13 offers marginally lower R_DS(on) at the cost of increased gate drive demand - making IRLHM620TRPBF optimal for balanced high-current, medium-frequency designs.

Availability

IRLHM620TRPBF is available at Aetrix Electronics and suitable for battery-powered motor drives, synchronous rectifiers, high-density load switches, and USB PD power path applications requiring stable component supply and long-term industrial availability.

Supply support for IRLHM620TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

This part belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage switching in space- and thermally-constrained battery-operated systems.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The datasheet specifies I_D = 21 A at T_A = 70°C and V_GS = 4.5 V. This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes standard 1-in² 2-oz copper pad on FR-4 PCB with no forced airflow.

Can IRLHM620TRPBF be used in avalanche mode?

Yes - it is rated for 120 mJ single-pulse unclamped inductive avalanche energy at T_J = 25°C. Operation in repetitive avalanche requires careful thermal analysis and is not recommended without validation per AN-1001 and application-specific stress testing.

Is the center thermal pad electrically isolated?

No - the exposed bottom thermal pad is internally connected to the drain (D) terminal. It must be soldered to a PCB copper area tied to the drain net and cannot be grounded or left floating without violating isolation and thermal performance specifications.

What is the gate threshold voltage range and how does it affect drive compatibility?

V_GS(th) is specified from 0.5 V to 1.1 V at I_D = 50 µA. This ensures reliable turn-on with 1.8 V and 3.3 V logic outputs, but full enhancement (R_DS(on) < 2.5 mΩ) requires ≥4.5 V gate drive - verify controller output swing and loading before system integration.

IRLHM620TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3620 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRLHM620TRPBF FAQ

1.How can I place an order for IRLHM620TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLHM620TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLHM620TRPBF reliable?

The price and inventory of IRLHM620TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHM620TRPBF is usually 5 days.

3.What payment methods are accepted for IRLHM620TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHM620TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLHM620TRPBF?

IRLHM620TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLHM620TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLHM620TRPBF?

For technical support, including IRLHM620TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHM620TRPBF requirements.

6.How does Aetrix verify that IRLHM620TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLHM620TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHM620TRPBF meets industry standards.

7.What is the process for return or replacement of IRLHM620TRPBF?

All IRLHM620TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHM620TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLHM620TRPBF part is unused and in its original packaging.

Return procedure for IRLHM620TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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