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Infineon Technologies IRLHS6276TRPBF
- Part No.:
- IRLHS6276TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 6-PowerVDFN
- Datasheet:
-
IRLHS6276TRPBF.pdf
- Description:
- MOSFET 2N-CH 20V 4.5A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,999
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Product details
Overview
IRLHS6276TRPBF from Infineon Technologies is a 20 V, N-channel dual-channel HEXFET Power MOSFET in a 2 mm × 2 mm PQFN Dual package, featuring RDS(on) of 45 mΩ at VGS = 4.5 V and 62 mΩ at VGS = 2.5 V, with continuous drain current up to 3.4 A at TC(bottom) = 25°C. It is designed for high-density DC-DC power stages in portable electronics, USB PD adapters, and load-switching applications requiring low gate drive voltage compatibility.
For engineers reviewing the IRLHS6276TRPBF datasheet, IRLHS6276TRPBF pinout, IRLHS6276TRPBF application, or IRLHS6276TRPBF equivalent, key selection criteria include its dual-channel configuration, 2.5 V logic-level gate threshold, low thermal resistance (19°C/W junction-to-case via bottom), and industry-standard PQFN pinout supporting space-constrained synchronous buck converters and battery protection circuits.
Technical Context
This dual N-channel MOSFET integrates two independent 20 V switches in a single 2 mm × 2 mm PQFN package with exposed thermal pad on bottom. Each channel supports VGS = ±12 V operation and exhibits gate threshold voltage (VGS(th)) of 0.5–1.1 V at 25°C, enabling direct drive from 3.3 V or 2.5 V microcontrollers without level-shifting.
Its static RDS(on) is specified at both 4.5 V and 2.5 V gate drive, with typical values of 33 mΩ and 46 mΩ respectively - critical for efficiency optimization in low-voltage, high-current point-of-load regulators. The device includes an integral body diode with trr = 5.2–7.8 ns and Qrr = 5.0–7.5 nC, suitable for synchronous rectification and fast-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 5 V rail switching applications. |
| RDS(on) @ VGS = 4.5 V | 45 mΩ max - Enables ≤150 mW conduction loss at 3.4 A, critical for thermally constrained mobile power stages. |
| RDS(on) @ VGS = 2.5 V | 62 mΩ max - Ensures functional turn-on with low-voltage GPIOs, supporting ultra-low-power wake-up and sequencing circuits. |
| ID @ TC(bottom) = 25°C | 3.4 A - Continuous current rating when mounted on PCB with thermal pad; determines usable current density per channel. |
| RθJC(bottom) | 19°C/W max - Low junction-to-case thermal resistance enables efficient heat transfer to PCB copper, reducing hotspot temperature rise. |
| Qg | 3.1 nC typ - Total gate charge value directly impacts switching loss and required driver strength in 1–2 MHz DC-DC designs. |
| VGS(th) | 0.5–1.1 V - Confirmed logic-level gate threshold ensures reliable enhancement-mode turn-on with sub-3 V control signals. |
Pinout & Package
The IRLHS6276TRPBF is housed in a 2 mm × 2 mm PQFN Dual package with thermally enhanced bottom-exposed pad. Pin assignment is symmetric across two identical channels, each with three terminals: Source (S), Drain (D), and Gate (G). The package uses standard surface-mount footprint compatible with IPC-7351B naming conventions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Channel 1 Drain (D1) | High-side or low-side switch node | Connected to input rail or inductor node; rated for 20 V repetitive blocking and pulsed currents up to 9.6 A. |
| Channel 1 Source (S1) | Reference node for Channel 1 | Common return path for Channel 1; electrically isolated from S2 unless externally tied; used for current sensing or bootstrap reference. |
| Channel 1 Gate (G1) | Control terminal for Channel 1 | Accepts 0–12 V logic-level signal; requires ≤3.1 nC charge for full turn-on; threshold confirmed at 0.8 V typical. |
| Channel 2 Drain (D2) | Independent switch node | Functionally identical to D1; enables dual-phase or redundant switching without external isolation components. |
| Channel 2 Source (S2) | Reference node for Channel 2 | Electrically separate from S1; allows independent source referencing (e.g., high-side + low-side configuration in half-bridge). |
| Channel 2 Gate (G2) | Control terminal for Channel 2 | Independent control input; same timing and drive requirements as G1; supports asynchronous or synchronized dual-channel operation. |
| Thermal Pad (Bottom) | Junction-to-PCB thermal interface | Must be soldered to solid copper pour for RθJC = 19°C/W performance; not electrically connected to any internal node. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 2.5 V gate drive | 62 mΩ max enables direct interfacing with 2.5 V/3.3 V MCUs in battery-powered systems without gate drivers. |
| Dual-channel integration in 2 mm × 2 mm PQFN | Reduces board area by >40% vs. two discrete SO-8 MOSFETs; eliminates layout mismatch between parallel switches. |
| 19°C/W RθJC(bottom) | Allows ≥2.5 W power dissipation at ΔT = 47.5°C rise over PCB, supporting sustained 3.4 A operation in compact layouts. |
| Body diode with trr = 5.2 ns | Enables efficient synchronous rectification in buck converters operating above 1 MHz without external Schottky replacement. |
| RoHS-compliant, halogen-free construction | Meets IPC-J-STD-609A Class 1 definition; supports compliance-critical industrial and medical end equipment. |
Applications
| USB-C Power Delivery Adapter | Portable SSD Power Management |
|---|---|
|
Use Scenario: Dual-channel load switching for 5 V/9 V/15 V/20 V output rails with dynamic voltage selection. IC Role / Device Role / Timing Role: Primary high-side and low-side switch pair controlling output voltage selection and fault isolation. Use Value: 45 mΩ RDS(on) limits voltage drop to <160 mV at 3.4 A, preserving tight output regulation under load transients. |
Use Scenario: Independent power gating for NVMe controller, DRAM cache, and USB interface in M.2 form factor SSDs. IC Role / Device Role / Timing Role: Dual-channel load switch enabling sequenced power-up and independent rail shutdown during sleep mode. Use Value: 2.5 V logic-compatible gate threshold allows direct control from low-power PMIC outputs, eliminating level shifters. |
| Wireless Charging Transmitter | Smartphone Battery Protection |
|
Use Scenario: Half-bridge switching stage driving resonant tank in 15 W Qi-compliant transmitter modules. IC Role / Device Role / Timing Role: Synchronous rectifier and gate-driven half-bridge switch with integrated body diodes for ZVS-assisted operation. Use Value: 5.2 ns reverse recovery time minimizes dead-time losses and EMI during high-frequency (100–205 kHz) switching. |
Use Scenario: Overcurrent and short-circuit protection in smartphone battery packs using dual-MOSFET back-to-back configuration. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with independent gate control for charge/discharge path isolation. Use Value: Electrically isolated S1/S2 terminals enable true bidirectional blocking without parasitic conduction paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI7157DP-T1-GE3 | Single-channel 30 V, 4.5 mΩ @ 10 V; no 2.5 V drive support; larger 3 mm × 3 mm package. | Requires external gate driver for 3.3 V logic; unsuitable for space-constrained dual-rail switching. | Select only if higher VDS margin and lower RDS(on) at 10 V drive are prioritized over size and low-VGS compatibility. |
| DMN3029LSD-13 | Dual-channel 30 V, 29 mΩ @ 4.5 V; VGS(th) = 1.0–2.5 V; 2 mm × 2 mm package but non-PQFN (SO-8 compatible outline). | Higher gate threshold risks incomplete turn-on with 2.5 V controllers; different thermal pad layout affects PCB reflow profile. | Preferable only when 30 V blocking is mandatory and system uses 3.3 V+ GPIOs with sufficient noise margin. |
Compared with SI7157DP-T1-GE3 and DMN3029LSD-13, the IRLHS6276TRPBF uniquely delivers verified 2.5 V gate drive capability, dual-channel symmetry in a true PQFN thermal package, and sub-5 ns body diode recovery - making it optimal for miniaturized, low-voltage, high-frequency power management where gate drive simplicity and thermal density are critical.
Availability
IRLHS6276TRPBF is available at Aetrix Electronics and suitable for USB-C PD adapters, portable SSD power sequencing, wireless charging transmitters, and smartphone battery protection circuits requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRLHS6276TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.
The IRLHS6276TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load-switching applications in consumer and portable electronics.
FAQ
What is the maximum continuous drain current for IRLHS6276TRPBF at 70°C ambient?
The datasheet specifies ID = 3.6 A at TA = 70°C with VGS = 4.5 V under standard JEDEC test conditions (1 inch² copper pad). This rating assumes natural convection cooling and accounts for derating due to ambient temperature rise and package thermal resistance.
Can IRLHS6276TRPBF be used in a half-bridge configuration?
Yes - its dual-channel architecture and electrically isolated sources (S1 and S2) allow direct implementation as high-side and low-side switches in a half-bridge. Gate drive must respect VGS = ±12 V limits and ensure proper shoot-through prevention via dead-time control.
Is the thermal pad on the bottom of the package electrically connected?
No - the exposed thermal pad is internally connected only to the MOSFET die substrate (drain potential in standard orientation) and is not tied to any source or gate terminal. PCB layout must isolate the pad from other nets unless intentionally connected to drain net for thermal and electrical purposes.
Does IRLHS6276TRPBF support avalanche energy rating?
Yes - the datasheet provides EAS = 40 mJ (single-pulse) at ID = 3.4 A and starting TJ = 25°C, validated per JEDEC JESD24-11. This rating applies to unclamped inductive switching events and supports robustness in relay-driving or motor-control edge cases.
IRLHS6276TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 6-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 310pF @ 10V
- Power - Max:
- 1.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PQFN Dual (2x2)
IRLHS6276TRPBF FAQ
1.How can I place an order for IRLHS6276TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLHS6276TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLHS6276TRPBF reliable?
The price and inventory of IRLHS6276TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHS6276TRPBF is usually 5 days.
3.What payment methods are accepted for IRLHS6276TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHS6276TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLHS6276TRPBF?
IRLHS6276TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLHS6276TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLHS6276TRPBF?
For technical support, including IRLHS6276TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHS6276TRPBF requirements.
6.How does Aetrix verify that IRLHS6276TRPBF is sourced from the original manufacturer or authorized distributors?
All IRLHS6276TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHS6276TRPBF meets industry standards.
7.What is the process for return or replacement of IRLHS6276TRPBF?
All IRLHS6276TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHS6276TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLHS6276TRPBF part is unused and in its original packaging.
Return procedure for IRLHS6276TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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