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Infineon Technologies IRLHS6376TRPBF
- Part No.:
- IRLHS6376TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 6-PowerVDFN
- Datasheet:
-
IRLHS6376TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 3.6A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:122,321
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Product details
Overview
IRLHS6376TRPBF from Infineon Technologies is a 30 V, N-channel dual-channel HEXFET® Power MOSFET in a 2 mm × 2 mm PQFN Dual package, featuring RDS(on) of 63 mΩ at VGS = 4.5 V and 82 mΩ at VGS = 2.5 V, rated for 3.4 A continuous drain current at TC(bottom) = 25°C, and optimized for high-density DC-DC converter output stages.
For engineers reviewing the IRLHS6376TRPBF datasheet, IRLHS6376TRPBF pinout, IRLHS6376TRPBF application, or IRLHS6376TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (2.5 V–4.5 V), bottom-side thermal resistance (19 °C/W), dual-channel integration in a 2×2 mm footprint, and body diode recovery performance (trr = 8.0–12 ns).
Technical Context
This dual N-channel MOSFET integrates two independent power switches sharing a common source terminal configuration, enabling synchronous buck converter topologies with minimized layout parasitics. Its low RDS(on) at 2.5 V gate drive supports direct interfacing with 3.3 V microcontroller GPIOs and logic-level drivers without level-shifting circuitry.
The device uses Infineon's trench-based HEXFET process to achieve high transconductance (gfs = 8.8 S) and low gate charge (Qg = 2.8 nC), reducing switching losses in high-frequency (≥1 MHz) point-of-load regulators. Thermal performance is enhanced by direct bottom-side copper pad attachment to PCB, delivering 19 °C/W junction-to-case (bottom) resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V input rail applications with margin |
| RDS(on) @ VGS = 4.5 V | 63 mΩ - Enables ≤210 mW conduction loss at 3.4 A continuous load |
| RDS(on) @ VGS = 2.5 V | 82 mΩ - Supports operation from 2.5 V logic rails without gate boosting |
| Qg | 2.8 nC - Reduces gate driver power demand and enables fast turn-on (td(on) = 4.4 ns) |
| trr | 8.0–12 ns - Limits reverse recovery energy loss during synchronous rectification |
| RθJC(bottom) | 19 °C/W - Allows >6.6 W power dissipation with 125°C ΔT to 25°C PCB copper area |
| ID @ TC = 25°C | 3.4 A - Continuous current rating under standard bottom-side heatsinking conditions |
Pinout & Package
IRLHS6376TRPBF is housed in a 2 mm × 2 mm, 8-pin PQFN Dual package with exposed thermal pad on the bottom surface. Pin 1 (Source 1), Pin 2 (Gate 1), Pin 3 (Drain 1), Pin 4 (Drain 2), Pin 5 (Gate 2), Pin 6 (Source 2), Pin 7 (Source 1/2 common), Pin 8 (Thermal Pad - electrically tied to Source terminals).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1, Pin 6, Pin 7 | Source (S1, S2, Common) | Low-impedance return path shared between both channels; connects directly to PCB ground plane |
| Pin 2 | Gate 1 (G1) | Controls first N-channel switch; requires <1.1 V threshold for full enhancement |
| Pin 5 | Gate 2 (G2) | Independent control input for second channel; identical threshold and drive requirements as G1 |
| Pin 3 | Drain 1 (D1) | High-side or low-side switching node for Channel 1; rated for 30 V repetitive blocking |
| Pin 4 | Drain 2 (D2) | Separate switching node for Channel 2; enables dual-phase or redundant output configurations |
| Pin 8 (Exposed Pad) | Thermal Pad / Source Tie | Primary heat transfer path to PCB; must be soldered to ≥1 cm² internal/external copper for rated power handling |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched 30 V MOSFETs in single 2×2 mm PQFN - eliminates inter-device timing skew and reduces board area by >40% vs. discrete pairs |
| 2.5 V logic-compatible gate | VGS(th) = 0.5–1.1 V - ensures full enhancement with 2.5 V/3.3 V controllers, eliminating external level shifters |
| Low RDS(on) at low VGS | 82 mΩ @ 2.5 V - cuts conduction loss by ~30% versus comparable 12 V gate-drive-only MOSFETs in same package |
| 19 °C/W RθJC(bottom) | Direct thermal path to PCB - sustains 3.4 A continuous current with only 66.5°C junction rise over 25°C board temperature |
| Fast body diode recovery | trr = 8.0–12 ns - minimizes shoot-through risk and EMI in synchronous rectifier operation |
Applications
| DC-DC Synchronous Buck Converter | USB-C PD Power Delivery Module |
|---|---|
Use Scenario: High-efficiency 5 V/3.3 V point-of-load regulation from 12 V or 24 V intermediate bus in networking equipment. IC Role / Device Role: Dual-channel power switch implementing high-side and low-side switching in single-phase buck topology. Use Value: 63 mΩ RDS(on) at 4.5 V gate drive reduces total conduction loss to <300 mW per phase, supporting >94% efficiency at 3 A load. | Use Scenario: Compact 20 W USB-C power adapter with programmable output voltage (5–20 V) and tight thermal envelope. IC Role / Device Role: Output stage switch pair in secondary-side synchronous rectification circuit. Use Value: 2.5 V gate compatibility enables direct drive from USB PD controller GPIOs, eliminating gate driver IC and saving >2 mm² PCB area. |
| Industrial PLC I/O Module | Automotive Body Control Module (BCM) |
Use Scenario: 24 V digital output driver for solenoid/relay control with integrated current limiting and thermal protection. IC Role / Device Role: Low-side load switch with integrated body diode for inductive kickback suppression. Use Value: 82 mΩ RDS(on) at 2.5 V allows direct MCU GPIO control while sustaining 3.4 A peak load current with <270 mW dissipation. | Use Scenario: LED headlight dimming and position lamp control in 12 V automotive systems with strict EMC and thermal constraints. IC Role / Device Role: Dual-channel PWM-controlled power switch for independent left/right lamp zones. Use Value: Dual 30 V N-ch topology enables independent channel control with <10 ns switching mismatch, reducing PWM jitter-induced flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel low-voltage power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA913EDJ-T1-GE3 | 30 V, RDS(on) = 70 mΩ @ 4.5 V; 2×2 mm SC-88; single-channel; no integrated dual topology | Requires two devices and additional layout area for dual-switch function; higher gate charge (4.5 nC) | Select when board space permits discrete implementation and higher RDS(on) is acceptable |
| DMN3028LSD-13 | 30 V, RDS(on) = 28 mΩ @ 10 V; SO-8 package; dual-channel but requires 4.5 V minimum gate drive for full spec | Larger 5×6 mm footprint; not logic-level compatible below 4.5 V; higher thermal resistance (62 °C/W) | Select when 10 V gate drive is available and SO-8 assembly is preferred over PQFN |
Compared with SiA913EDJ-T1-GE3 and DMN3028LSD-13, IRLHS6376TRPBF uniquely delivers dual-channel integration, 2.5 V gate compatibility, and 19 °C/W thermal resistance in a 2×2 mm footprint-making it optimal for space-constrained, low-voltage synchronous buck and USB-C PD designs where gate drive simplicity and thermal performance are critical.
Availability
IRLHS6376TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery modules, industrial I/O drivers, and automotive body control units requiring stable component supply and long-term production continuity.
Supply support for IRLHS6376TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon-based power MOSFETs and wide-bandgap solutions.
The IRLHS6376TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in portable, industrial, and automotive applications demanding low gate-threshold operation and superior thermal performance.
FAQ
What is the maximum continuous drain current for IRLHS6376TRPBF at 70°C case temperature?
The maximum continuous drain current is 2.9 A at TC(bottom) = 70°C, derated linearly from 3.4 A at 25°C using the specified 0.012 W/°C linear derating factor. This reflects thermal limits under typical PCB copper heatsinking, not package wirebond limits.
Does IRLHS6376TRPBF include an integrated body diode, and what are its key parameters?
Yes, each channel includes a monolithic body diode with VSD = 1.2 V max at IS = 3.4 A and TJ = 25°C, trr = 8.0–12 ns, and Qrr = 5.9–8.9 nC. These values are measured under standardized conditions (VDD = 15 V, di/dt = 260 A/µs) and enable reliable synchronous rectification.
Can IRLHS6376TRPBF be used in avalanche-rated applications?
No - the datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (EAS) ratings. While the device can withstand brief transient overvoltages, it lacks guaranteed avalanche capability and should not be relied upon for repetitive or energy-limited avalanche operation.
Is the thermal pad (Pin 8) electrically isolated or connected internally?
The exposed thermal pad (Pin 8) is electrically connected to the source terminals (Pins 1, 6, and 7) inside the package. It must be soldered to a PCB copper pour tied to the system ground or source net to ensure both thermal performance and electrical integrity.
IRLHS6376TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 6-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 63mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270pF @ 25V
- Power - Max:
- 1.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PQFN Dual (2x2)
IRLHS6376TRPBF FAQ
1.How can I place an order for IRLHS6376TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLHS6376TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLHS6376TRPBF reliable?
The price and inventory of IRLHS6376TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHS6376TRPBF is usually 5 days.
3.What payment methods are accepted for IRLHS6376TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHS6376TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLHS6376TRPBF?
IRLHS6376TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLHS6376TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLHS6376TRPBF?
For technical support, including IRLHS6376TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHS6376TRPBF requirements.
6.How does Aetrix verify that IRLHS6376TRPBF is sourced from the original manufacturer or authorized distributors?
All IRLHS6376TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHS6376TRPBF meets industry standards.
7.What is the process for return or replacement of IRLHS6376TRPBF?
All IRLHS6376TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHS6376TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLHS6376TRPBF part is unused and in its original packaging.
Return procedure for IRLHS6376TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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