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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

UMW IRLL014NTR

Name: IRLL014NTR
Brand: UMW
SKU: IRLL014NTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLL014NTR

Manufacturer:: UMW

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRLL014NTR.pdf

Description:: MOSFET N-CH 55V 2A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:2,500

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Product details

Overview

IRLL014NTR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 55 V V_DSS, 2.0 A continuous drain current at 25°C, and 0.14 Ω R_DS(on) at V_GS = 10 V. It features fast switching (t_r = 4.9 ns), full avalanche rating (E_AS = 32 mJ), and is optimized for low-voltage DC-DC conversion, load switching, and motor control in space-constrained PCBs.

For engineers reviewing the IRLL014NTR datasheet, IRLL014NTR pinout, IRLL014NTR application, or IRLL014NTR equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), thermal performance on FR-4 (R_θJA = 90°C/W), and body diode recovery characteristics (t_rr = 41–61 ns, Q_rr = 73–110 nC).

Technical Context

This HEXFET device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 9.5–14 nC, Q_gd = 3.0–4.4 nC) supports efficient high-frequency operation up to several hundred kHz in synchronous buck stages.

The integrated body diode exhibits controlled reverse recovery with 100 A/µs di/dt capability and 7.2 V/ns peak dv/dt rating under specified test conditions. Junction temperature range spans –55°C to +150°C, enabling use in industrial ambient environments without derating below 70°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in 24 V and 48 V systems.
R_DS(on)	0.14 Ω @ V_GS = 10 V, I_D = 2.0 A - Determines conduction loss (P_cond ≈ 0.56 W at 2 A), critical for thermal budget in SMT layouts.
I_D (continuous)	2.0 A @ T_A = 25°C - Usable DC load current on standard FR-4; derates to 1.6 A at 70°C ambient.
Q_g	9.5–14 nC - Total gate charge defining driver strength requirement; enables <100 ns turn-on with 100 mA gate source/sink.
t_r/t_f	4.9 ns / 2.9 ns - Fast edge rates reduce switching loss in PWM applications above 100 kHz.
E_AS	32 mJ - Single-pulse avalanche energy rating confirms robustness against inductive kickback in relay/motor drive circuits.
V_GS(th)	1.0–2.0 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIO without level-shifting.

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed drain tab for enhanced thermal conduction. The molded plastic body includes three leads plus an integral heatsinking pad connected internally to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain Tab)	Drain (D)	Exposed copper pad soldered to PCB copper pour; primary thermal path and high-current output node.
Pin 2 (Lead)	Gate (G)	High-impedance control input; requires low-inductance routing to minimize ringing during switching.
Pin 3 (Lead)	Source (S)	Reference node for gate drive and load return; connects directly to power ground plane.
Pin 4 (Lead)	Drain (D)	Secondary drain connection; paralleled with tab for lower inductance in high-di/dt paths.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V enables direct interface with 3.3 V/5 V MCUs and CPLDs without external level shifters.
Fifth-generation HEXFET process	Reduces R_DS(on) by ~25% vs. prior gen at same die size, improving power density in compact converters.
Full avalanche rating	Guaranteed single-pulse E_AS = 32 mJ allows safe operation in inductive load switching without snubbers.
Enhanced thermal pad	SOT-223 drain tab delivers 1.0 W power dissipation on FR-4 and 2.1 W on 1-inch copper, exceeding SO-8 limits.
Fast body diode recovery	t_rr = 41–61 ns and Q_rr = 73–110 nC support synchronous rectification in buck regulators up to 500 kHz.

Applications

DC-DC Buck Converter

Low-Voltage Load Switch

Use Scenario: High-efficiency 5 V → 3.3 V point-of-load regulator in networking equipment with 2 A output requirement.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300 kHz; body diode conducts during low-side interval.

Use Value: 0.14 Ω R_DS(on) limits conduction loss to <0.6 W, while fast t_r/t_f reduces switching loss below 0.2 W at 300 kHz.

Use Scenario: Controlled 12 V power enable for USB peripheral module in embedded gateway device.

IC Role / Device Role / Timing Role: Low-side load switch driven by 3.3 V GPIO; provides overcurrent protection via R_DS(on)-based sensing.

Use Value: V_GS(th) of 1.0–2.0 V ensures full turn-on with 3.3 V drive, eliminating need for gate boost circuitry.

Brushed DC Motor Driver

Industrial Sensor Interface

Use Scenario: H-bridge half-bridge stage controlling 24 V, 1.5 A fan in HVAC controller.

IC Role / Device Role / Timing Role: Low-side switch in PWM-driven bridge; handles bidirectional current and flyback energy.

Use Value: Full avalanche rating (E_AS = 32 mJ) absorbs inductive energy during PWM off-time without external clamping.

Use Scenario: Power gating for analog front-end (AFE) in programmable logic controller (PLC) I/O module.

IC Role / Device Role / Timing Role: Precision on/off control of 5 V sensor supply; low leakage (I_DSS ≤ 25 µA) prevents false wake-up.

Use Value: Gate leakage <100 nA at V_GS = ±16 V ensures stable OFF-state over temperature and time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.12 Ω @ 4.5 V (lower gate drive dependency); Q_g = 11.5 nC; SOT-23-3 package.	Higher current density but limited thermal mass; max I_D = 2.8 A only with aggressive heatsinking.	Prefer for ultra-compact 3.3 V logic-driven switches where board area is constrained more than thermal margin.
SI2302DS-T1-GE3	R_DS(on) = 0.095 Ω @ 4.5 V; V_GS(th) = 0.6–1.2 V; SOT-23 package; no drain tab.	No exposed thermal pad; R_θJA = 200°C/W limits usable current to ~0.8 A on FR-4.	Choose when lowest possible gate threshold and minimal footprint are prioritized over power handling.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, the IRLL014NTR offers superior thermal management via its SOT-223 drain tab, making it the preferred choice for sustained 2 A loads in industrial ambient conditions where reliability trumps minimal footprint.

Availability

IRLL014NTR is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, load switches, and sensor power gating requiring stable component supply across extended production lifecycles.

Supply support for IRLL014NTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRLL014NTR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, rugged switching in low-voltage industrial and consumer power systems.

FAQ

Is IRLL014NTR suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage (V_GS(th)) of 1.0–2.0 V and guaranteed R_DS(on) down to V_GS = 4.0 V (0.28 Ω), the IRLL014NTR fully enhances using standard 3.3 V GPIO outputs. No external level shifter is required, simplifying layout and reducing BOM count in MCU-based designs.

What is the maximum continuous drain current at 70°C ambient?

The datasheet specifies I_D = 1.6 A at T_A = 70°C with V_GS = 10 V on FR-4 board using minimum recommended footprint. This reflects linear derating from 2.0 A at 25°C (8.3 mW/°C), consistent with its R_θJA = 90°C/W thermal resistance under those conditions.

Does IRLL014NTR have a built-in body diode, and how is it characterized?

Yes. It integrates a monolithic p-n junction body diode with V_SD = 1.0 V at I_S = 2.0 A and T_J = 25°C. Reverse recovery is characterized by t_rr = 41–61 ns and Q_rr = 73–110 nC at di/dt = 100 A/µs, supporting synchronous rectification in buck topologies up to 500 kHz.

Can IRLL014NTR be used in avalanche mode repeatedly?

No. While rated for single-pulse avalanche energy (E_AS = 32 mJ), its repetitive avalanche energy (E_AR) is only 0.1 mJ. Repeated avalanche operation risks cumulative junction damage. For circuits subject to frequent inductive transients, external clamping or snubber networks are recommended.

IRLL014NTR Specifications

Product attributes: Attribute value

Manufacturer:: UMW

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRLL014NTR FAQ

1.How can I place an order for IRLL014NTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL014NTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL014NTR reliable?

The price and inventory of IRLL014NTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL014NTR is usually 5 days.

3.What payment methods are accepted for IRLL014NTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL014NTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL014NTR?

IRLL014NTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL014NTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL014NTR?

For technical support, including IRLL014NTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL014NTR requirements.

6.How does Aetrix verify that IRLL014NTR is sourced from the original manufacturer or authorized distributors?

All IRLL014NTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL014NTR meets industry standards.

7.What is the process for return or replacement of IRLL014NTR?

All IRLL014NTR units undergo pre-shipment inspection (PSI). If there is an issue with IRLL014NTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL014NTR part is unused and in its original packaging.

Return procedure for IRLL014NTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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