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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLL110PBF

Name: IRLL110PBF
Brand: Vishay Siliconix
SKU: IRLL110PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLL110PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRLL110PBF.pdf

Description:: MOSFET N-CH 100V 1.5A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLL110PBF from Vishay Siliconix is a 100 V, 1.5 A N-channel logic-level power MOSFET in SOT-223 package, featuring R_DS(on) = 0.54 Ω at V_GS = 5 V, 6.1 nC total gate charge, and repetitive avalanche rating-designed for low-voltage DC-DC converter high-side switches and LED driver control stages.

For engineers reviewing the IRLL110PBF datasheet, IRLL110PBF pinout, IRLL110PBF application, or IRLL110PBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), surface-mount thermal performance (3.1 W @ T_C = 25 °C), and fast switching (t_r = 47 ns, t_f = 18 ns) in space-constrained industrial and consumer power stages.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for low gate charge and rugged unclamped inductive switching. Its dynamic dV/dt rating of 5.5 V/ns and 50 mJ single-pulse avalanche energy support reliable operation in flyback and buck converter topologies with moderate voltage transients.

The device integrates a body diode with t_rr = 110–130 ns and Q_rr = 0.50–0.65 μC, enabling synchronous rectification in low-duty-cycle applications. Thermal resistance R_thJC = 40 °C/W and R_thJA = 60 °C/W (PCB mount) reflect its SOT-223 thermal design for >1.25 W dissipation without heatsink.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transient spikes in industrial power supplies
R_DS(on) max @ V_GS = 5 V	0.54 Ω - enables <1.2 W conduction loss at 1.5 A continuous drain current in ambient-limited PCB layouts
Q_g max	6.1 nC - allows efficient 1–2 MHz switching with standard gate drivers (e.g., TC4420) without excessive drive power
I_D continuous @ T_C = 100 °C	0.93 A - defines usable current derating for sealed enclosures or high-ambient environments
E_AS	50 mJ - sustains unclamped inductive turn-off events in relay drivers or solenoid controls without failure
V_GS(th)	1.0–2.0 V - ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs, eliminating level-shifter need
t_r/t_f	47 ns / 18 ns - minimizes switching losses in PWM dimming circuits and battery-powered motor controllers

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction; 3-pin surface-mount outline per JEDEC TO-261AA; 6.3–6.7 mm × 3.3–3.7 mm footprint; 1.55–1.80 mm height; drain tab electrically connected to pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level control input; accepts 3.3 V/5 V CMOS signals directly; 100 nA leakage at ±10 V
Pin 2 (D)	Drain	Main high-side power terminal; internally bonded to exposed copper tab for heatsinking; rated 100 V
Pin 3 (S)	Source	Power return path and reference for gate drive; connects to ground or low-side switch source node

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4 V, enabling direct interface with 3.3 V MCUs and reducing BOM count
Repetitive avalanche rated	Rated for 0.31 mJ repetitive avalanche energy, supporting robustness in inductive load switching without snubbers
Dynamic dV/dt immunity	5.5 V/ns threshold prevents false turn-on during high-slew-rate noise transients in motor drives
SOT-223 thermal performance	3.1 W power dissipation at T_C = 25 °C-2.5× higher than SO-8 equivalents-reducing need for external heatsinks
Fast body diode recovery	t_rr = 110–130 ns with Q_rr = 0.50–0.65 μC enables use as freewheeling diode in low-frequency synchronous rectifiers

Applications

LED Constant-Current Driver	Low-Voltage DC-DC Converter
Use Scenario: High-efficiency constant-current LED string control in smart lighting modules with 12–24 V input. IC Role / Device Role / Timing Role: High-side switch modulating LED current via PWM at 1–10 kHz; body diode handles freewheeling during off-time. Use Value: R_DS(on) = 0.54 Ω limits conduction loss to <0.8 W at 1.2 A, while 47 ns rise time ensures clean PWM edges and minimal EMI.	Use Scenario: Step-down regulator for FPGA core voltage (1.2 V/3 A) in embedded computing systems using discrete power stage. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage; driven complementarily with high-side FET. Use Value: Fast t_f = 18 ns and low Q_rr reduce reverse recovery loss, improving efficiency by ~1.2% vs. standard diodes at 500 kHz switching.
Industrial Relay Driver	USB-Powered Load Switch
Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoids in PLC I/O modules. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing L·di/dt energy during turn-off; avalanche-rated for reliability. Use Value: 50 mJ single-pulse avalanche energy withstands >100,000 cycles of 24 V/1 A solenoid switching without degradation.	Use Scenario: USB-C port power delivery enable switch limiting inrush and providing overcurrent protection in portable test equipment. IC Role / Device Role / Timing Role: Low-side load switch controlled by USB PD controller GPIO; logic-level compatible with 3.3 V signaling. Use Value: V_GS(th) = 1.0–2.0 V ensures turn-on at 2.8 V under weak USB bus conditions, preventing brownout-induced dropout.

LED Constant-Current Driver

Low-Voltage DC-DC Converter

Use Scenario: High-efficiency constant-current LED string control in smart lighting modules with 12–24 V input.

IC Role / Device Role / Timing Role: High-side switch modulating LED current via PWM at 1–10 kHz; body diode handles freewheeling during off-time.

Use Value: R_DS(on) = 0.54 Ω limits conduction loss to <0.8 W at 1.2 A, while 47 ns rise time ensures clean PWM edges and minimal EMI.

Use Scenario: Step-down regulator for FPGA core voltage (1.2 V/3 A) in embedded computing systems using discrete power stage.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage; driven complementarily with high-side FET.

Use Value: Fast t_f = 18 ns and low Q_rr reduce reverse recovery loss, improving efficiency by ~1.2% vs. standard diodes at 500 kHz switching.

Industrial Relay Driver

USB-Powered Load Switch

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoids in PLC I/O modules.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing L·di/dt energy during turn-off; avalanche-rated for reliability.

Use Value: 50 mJ single-pulse avalanche energy withstands >100,000 cycles of 24 V/1 A solenoid switching without degradation.

Use Scenario: USB-C port power delivery enable switch limiting inrush and providing overcurrent protection in portable test equipment.

IC Role / Device Role / Timing Role: Low-side load switch controlled by USB PD controller GPIO; logic-level compatible with 3.3 V signaling.

Use Value: V_GS(th) = 1.0–2.0 V ensures turn-on at 2.8 V under weak USB bus conditions, preventing brownout-induced dropout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.28 Ω @ V_GS = 4.5 V; SOT-23-3; I_D = 4.2 A; no avalanche rating	Better conduction loss but lower voltage rating (20 V); unsuitable for >30 V rails or inductive loads	Choose DMN2004LK-7 only for low-voltage (<24 V), high-current digital load switching where avalanche immunity is not required.
SI2302DS-T1-GE3	R_DS(on) = 0.055 Ω @ V_GS = 4.5 V; SOT-23; I_D = 2.6 A; Q_g = 3.5 nC; no avalanche rating	Lower gate charge and on-resistance but 20 V V_DS; inadequate for 100 V transient suppression	Prefer SI2302DS-T1-GE3 for battery-powered 3.3 V/5 V logic-controlled switches where size and speed outweigh voltage margin needs.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, the IRLL110PBF trades higher R_DS(on) for 100 V capability, repetitive avalanche robustness, and SOT-223 thermal capacity-making it uniquely suitable for industrial 24–48 V power control where reliability under stress matters more than minimal conduction loss.

Availability

IRLL110PBF is available at Aetrix Electronics and suitable for industrial relay drivers, LED constant-current modules, and USB-C load switches requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.

Supply support for IRLL110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, ruggedness, and reliability across automotive, industrial, and computing markets.

The IRLL110PBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered specifically for surface-mount DC-DC conversion, LED control, and low-voltage switching where gate drive simplicity and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for IRLL110PBF at 100 °C case temperature?

The IRLL110PBF supports 0.93 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the SOT-223 package under sustained high-temperature operation and must be applied when ambient or board temperatures exceed 70 °C in enclosed designs.

Does IRLL110PBF have avalanche capability, and how is it rated?

Yes, the IRLL110PBF is repetitively avalanche rated with 0.31 mJ per pulse and single-pulse rated for 50 mJ (E_AS). These values are measured under standardized unclamped inductive switching conditions (V_DD = 25 V, I_AS = 1.5 A, L = 25 mH) and define safe operating limits for inductive load turn-off without external snubbers.

Can IRLL110PBF be driven directly by a 3.3 V microcontroller GPIO?

Yes, the IRLL110PBF has a gate threshold voltage range of 1.0–2.0 V and is fully enhanced at V_GS = 4 V, making it compatible with 3.3 V logic outputs. At 3.3 V, R_DS(on) increases slightly versus 5 V, but remains within usable range (≤0.76 Ω) for ≤1 A loads per the datasheet's V_GS = 4.0 V specification.

What is the thermal resistance from junction to ambient for IRLL110PBF in standard PCB mount?

The maximum junction-to-ambient thermal resistance (R_thJA) for IRLL110PBF is 60 °C/W when mounted on a 1" square FR-4 PCB. This value assumes standard copper pour layout and determines allowable power dissipation: at 50 °C ambient, max P_D ≈ 1.67 W before reaching T_J = 150 °C.

Is the body diode of IRLL110PBF suitable for synchronous rectification?

The IRLL110PBF body diode has t_rr = 110–130 ns and Q_rr = 0.50–0.65 μC, which supports synchronous rectification in low-frequency (<200 kHz) buck converters. However, its V_SD = 2.5 V at 1.5 A indicates higher forward drop than Schottky diodes-use only where gate timing control and integrated FET count outweigh efficiency penalties.

IRLL110PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 900mA, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.1 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRLL110PBF FAQ

1.How can I place an order for IRLL110PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLL110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLL110PBF reliable?

The price and inventory of IRLL110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL110PBF is usually 5 days.

3.What payment methods are accepted for IRLL110PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL110PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLL110PBF?

IRLL110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLL110PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLL110PBF?

For technical support, including IRLL110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL110PBF requirements.

6.How does Aetrix verify that IRLL110PBF is sourced from the original manufacturer or authorized distributors?

All IRLL110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL110PBF meets industry standards.

7.What is the process for return or replacement of IRLL110PBF?

All IRLL110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLL110PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLL110PBF part is unused and in its original packaging.

Return procedure for IRLL110PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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