Infineon Technologies IRLML0100TRPBF-1

Overview

IRLML0100TRPBF-1 from Infineon Technologies is a 100 V, 1.6 A N-channel enhancement-mode HEXFET® Power MOSFET in Micro3™ (SOT-23) package, featuring 220 mΩ R_DS(on) at V_GS = 10 V, 2.5 nC total gate charge, and integrated body diode with 1.3 V forward voltage. It serves as a low-side load switch in space-constrained DC-DC converters and battery protection circuits.

For engineers reviewing the IRLML0100TRPBF-1 datasheet, IRLML0100TRPBF-1 pinout, IRLML0100TRPBF-1 application, or IRLML0100TRPBF-1 equivalent, key selection criteria include verified 100 V V_DS, SOT-23 thermal derating behavior, gate threshold voltage range (1.0–2.5 V), body diode recovery performance (Q_rr = 13–20 nC), and industrial temperature qualification (−55°C to +150°C).

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage switching in low-power, surface-mount applications. Its gate structure supports fast turn-on (t_d(on) = 2.2 ns) and controlled Miller effect (Q_gd = 1.2 nC), enabling efficient operation in PWM-driven loads up to 50 V bus voltage.

The device integrates a robust intrinsic p-n junction body diode rated for 1.1 A continuous source current and 7.0 A pulsed current, with reverse recovery time (t_rr) of 20–30 ns under defined di/dt conditions. Thermal resistance R_θJA is 100 °C/W on standard 1-in² copper board, supporting stable operation at ambient temperatures up to 70°C with 1.3 W power dissipation.

Key Specifications

Pinout & Package

IRLML0100TRPBF-1 uses the industry-standard Micro3™ package (JEDEC TO-236AB / SOT-23), with 3 terminals mounted on a single-row, gull-wing leadframe. The package measures 2.80 × 1.20 × 0.95 mm and is qualified to MSL1 for reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with DMN2004LK-7 and SI2300DS-T1-GE3, the IRLML0100TRPBF-1 offers balanced trade-offs: moderate R_DS(on) and Q_g, guaranteed 100 V rating, and industrial temperature support-making it optimal for cost-sensitive, thermally constrained 1–2 A switching applications.

Availability

IRLML0100TRPBF-1 is available at Aetrix Electronics and suitable for USB power delivery, battery management systems, and LED lighting requiring stable component supply and long-term industrial availability.

Supply support for IRLML0100TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

This part belongs to Infineon's HEXFET® Micro3™ logic-level MOSFET product line, engineered for compact, high-reliability switching in space-limited consumer, computing, and industrial power supplies.

FAQ

What is the maximum safe operating voltage for IRLML0100TRPBF-1?

The absolute maximum drain-source voltage (V_DS) is 100 V, verified per datasheet Section 1. Absolute Maximum Ratings. Operation above this value risks avalanche breakdown and permanent damage, even for short pulses. Designers must ensure all transient conditions-including inductive kickback and supply overshoot-remain below 100 V with appropriate margin.

Can IRLML0100TRPBF-1 be driven directly from a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, and R_DS(on) is specified down to V_GS = 4.5 V (178 mΩ max). At 3.3 V, it achieves partial enhancement; for full 1.6 A conduction, use V_GS ≥ 4.5 V. For robust 3.3 V-only operation, consider gate driver buffering or selecting a MOSFET with lower V_GS(th) max.

Does IRLML0100TRPBF-1 include an integrated body diode, and what are its key parameters?

Yes-it features an integral p-n junction body diode with V_SD = 1.3 V at I_S = 1.1 A, reverse recovery time t_rr = 20–30 ns, and Q_rr = 13–20 nC at dI/dt = 100 A/μs. These values are measured under standardized conditions (T_J = 25°C, V_R = 50 V, I_F = 1.1 A) and define freewheeling capability in inductive switching applications.

What is the thermal resistance and maximum power dissipation at 70°C ambient?

R_θJA is 100 °C/W on a 1-in² copper board. At T_A = 70°C, maximum allowable power dissipation is 1.3 W (calculated as (T_J(max) − T_A) / R_θJA = (150 − 70) / 100). This corresponds to ~1.6 A continuous current only if R_DS(on) remains near 220 mΩ-actual current must be reduced if junction temperature approaches 150°C.