UMW IRLML2803TR

Overview

IRLML2803TR from Infineon Technologies is an N-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for 30 V V_DS, 3.9 A continuous drain current at 25°C, and 0.093 Ω R_DS(on) at V_GS = 10 V. It serves as a low-side load switch in portable power management, battery protection circuits, and LED driver stages where compact size and logic-level gate drive are critical.

For engineers reviewing the IRLML2803TR datasheet, IRLML2803TR pinout, IRLML2803TR application, or IRLML2803TR equivalent, key selection criteria include its 30 V breakdown voltage, sub-100 mΩ on-resistance at 4.5 V gate drive, SOT-23 thermal resistance of 230°C/W, and avalanche energy rating of 7.3 mJ - all essential for high-efficiency, space-constrained DC-DC and load-switching designs.

Technical Context

This MOSFET employs planar trench-gate HEXFET® technology optimized for low gate charge (Q_G = 4.3 nC) and fast switching (t_d(on) = 10 ns, t_f = 12 ns). Its body diode exhibits 1.2 V forward drop at 0.91 A and supports unclamped inductive switching with validated single-pulse avalanche capability up to 7.3 mJ.

The device operates across –55°C to +150°C junction temperature range and features ±20 V gate-source voltage tolerance. Its R_DS(on) remains stable over temperature - normalized to 1.0 at 25°C and 1.4 at 150°C - enabling predictable conduction loss in thermally demanding environments.

Key Specifications

Pinout & Package

IRLML2803TR uses the Micro3™ package (JEDEC TO-236AB), a surface-mount SOT-23 variant with 3 terminals and 1.9 mm × 1.3 mm footprint. The package supports reflow soldering and delivers 230°C/W junction-to-ambient thermal resistance in standard layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage N-channel MOSFET applications.

Compared with DMN2004LK-7 and SI2303DS-T1-E3, IRLML2803TR offers the best balance of low gate charge, robust avalanche rating, and verified 3.9 A current handling in SOT-23 - making it optimal for mixed-signal embedded systems requiring both efficiency and transient resilience.

Availability

IRLML2803TR is available at Aetrix Electronics and suitable for portable power management, USB-C interface protection, and IoT sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for IRLML2803TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRLML series targets logic-level, low-R_DS(on) discrete MOSFETs for space-constrained battery-powered and portable electronics - emphasizing gate drive simplicity, thermal efficiency, and reliability in unheatsinked layouts.

FAQ

What is the maximum safe operating temperature for IRLML2803TR?

The junction temperature must not exceed +150°C under steady-state or transient conditions. With R_θJA = 230°C/W and 1 W dissipation, junction rise is ~230°C above ambient - so derating is required above 25°C ambient. For 3.9 A continuous operation, PCB copper area and airflow must limit T_J ≤ 150°C.

Can IRLML2803TR be driven directly by a 3.3 V microcontroller GPIO?

Yes. Its V_GS(th) range is 1.0–2.4 V, and R_DS(on) drops to 0.12 Ω at V_GS = 4.5 V and 0.093 Ω at V_GS = 10 V. At 3.3 V, R_DS(on) is ~0.15 Ω - sufficient for ≤2.5 A loads with acceptable conduction loss and thermal margin.

Does IRLML2803TR have integrated ESD protection?

No. The device has no built-in ESD protection diodes. External TVS or RC filtering is recommended on gate and drain lines in handheld or connector-exposed applications. Gate oxide withstands ±20 V V_GS, but human-body-model ESD events exceeding 2 kV can cause latent damage without protection.

Is the Micro3™ package compatible with standard SOT-23 footprints?

Yes. Micro3™ is JEDEC TO-236AB - identical in outline, pad layout, and lead pitch to industry-standard SOT-23. Footprint dimensions (1.90 × 1.30 mm) and recommended stencil aperture match IPC-7351B SOT-23-3, enabling drop-in replacement without PCB redesign.