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Infineon Technologies IRLML2803TRPBF-1
- Part No.:
- IRLML2803TRPBF-1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
IRLML2803TRPBF-1.pdf
- Description:
- MOSFET N-CH 30V 1.2A SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:7,907
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Product details
Overview
IRLML2803TRPBF-1 from Infineon Technologies is a 30 V, 1.2 A N-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, optimized for low-voltage switching in space-constrained DC-DC converters and load switches. It delivers RDS(on) = 0.25 Ω at VGS = 10 V, 3.3 nC typical gate charge, and operates across –55 °C to +150 °C junction temperature range.
For engineers reviewing the IRLML2803TRPBF-1 datasheet, IRLML2803TRPBF-1 pinout, IRLML2803TRPBF-1 application, or IRLML2803TRPBF-1 equivalent, key selection criteria include its SOT-23-compatible footprint, 230 °C/W RθJA, avalanche-rated operation (EAS = 1.2 mJ), and industrial-grade MSL1 qualification for high-reliability embedded power control.
Technical Context
This logic-level MOSFET uses planar Trench technology to achieve low on-resistance with minimal gate drive voltage. Its 3-pin SOT-23 configuration supports source-grounded switching topologies, and the device is characterized for unclamped inductive switching with guaranteed single-pulse avalanche energy.
The thermal design is constrained by RθJA = 230 °C/W (no heatsink), limiting continuous power dissipation to 540 mW at 25 °C ambient. Gate threshold voltage is specified between 1.0 V and 2.5 V, enabling direct interface with 3.3 V microcontrollers without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V rail switching and automotive body electronics |
| RDS(on) max @ VGS = 10 V | 0.25 Ω - Enables ≤300 mW conduction loss at 1.2 A DC load current |
| ID @ TA = 25 °C | 1.2 A - Continuous current rating under standard PCB mounting (no copper pour) |
| Qg typ. | 3.3 nC - Low gate charge reduces switching losses and driver stress in 1–500 kHz SMPS |
| EAS | 1.2 mJ - Rated single-pulse avalanche energy supports inductive load turn-off without snubbers |
| RθJA | 230 °C/W - Thermal resistance defines maximum power handling on 1-in² FR4 with 1 oz Cu |
Pinout & Package
Package: Micro3™ (SOT-23 / TO-236AB), JEDEC-compliant, RoHS-compliant, halogen-free, MSL1 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 1.0–15 V VGS; requires <3.3 nC charge for full enhancement |
| 2 (S) | Source | Reference node for gate drive; tied to system ground in low-side switch configurations |
| 3 (D) | Drain | High-side connection point; handles up to 30 V and 1.2 A with 0.25 Ω on-state resistance |
Key Features
| Feature | Design Value |
|---|---|
| Industry-standard SOT-23 pinout | Enables drop-in replacement across multiple vendors without PCB redesign |
| Logic-level gate drive | Turns fully on at VGS ≥ 4.5 V - compatible with 3.3 V GPIO and low-power MCU outputs |
| MSL1 moisture sensitivity | Eliminates bake requirements before reflow; supports standard SMT assembly flow |
| Industrial temperature range | Guaranteed operation from –55 °C to +150 °C junction temperature for harsh-environment deployment |
Applications
| Power Management in Wearables | USB Port Power Switching |
|---|---|
Use Scenario: Battery-powered smartwatch using 3.7 V Li-ion supply with discrete load switching for sensor subsystems. IC Role / Device Role: Low-side load switch controlling power to BLE radio and accelerometer modules. Use Value: 0.25 Ω RDS(on) limits dropout to <300 mV at 1.2 A, preserving battery runtime and enabling fast enable/disable via 3.3 V MCU pin. | Use Scenario: USB 2.0 hub IC requiring overcurrent-protected downstream port power control. IC Role / Device Role: High-side switch isolating VBUS per port during fault conditions. Use Value: 1.2 A rating and 1.2 mJ EAS withstand short-circuit transients without latch-up or destruction during hot-plug events. |
| Automotive Body Control Module | Industrial Sensor Node Power Gating |
Use Scenario: 12 V vehicle electrical system powering LED interior lighting and small solenoids. IC Role / Device Role: Low-side driver for PWM-controlled lamp dimming and relay coil activation. Use Value: –55 °C to +150 °C rating ensures reliability under hood temperature cycling; 230 °C/W RθJA allows use on compact PCBs without thermal vias. | Use Scenario: Wireless vibration sensor node powered by coin cell, requiring ultra-low quiescent current sleep mode. IC Role / Device Role: Load switch disconnecting entire analog front-end during MCU deep-sleep intervals. Use Value: Gate leakage <100 nA at VGS = 0 V minimizes standby current; SOT-23 footprint saves board area in sub-10 mm² designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.19 Ω @ VGS = 4.5 V; higher 2.0 A ID rating; same SOT-23 package | Better suited for 3.3 V-driven loads above 1.2 A; slightly higher gate charge (4.2 nC) | Select when lower on-resistance at logic-level drive is critical and gate drive strength permits higher Qg |
| SI2302DS-T1-BE3 | RDS(on) = 0.095 Ω @ VGS = 4.5 V; 2.6 A ID; different pinout (G-S-D vs. G-D-S) | Requires PCB layout change due to reversed drain/source pins; superior conduction efficiency below 1 A | Choose only if redesigning layout; verify gate drive compatibility with lower VGS(th) (0.4–1.2 V) |
Compared with DMN2004LK-7 and SI2302DS-T1-BE3, the IRLML2803TRPBF-1 offers balanced trade-offs: verified avalanche robustness (1.2 mJ), industrial MSL1 qualification, and strict SOT-23 pinout compliance-making it optimal for cost-sensitive, space-limited, and thermally unenhanced designs where 1.2 A switching is sufficient.
Availability
IRLML2803TRPBF-1 is available at Aetrix Electronics and suitable for USB power delivery, wearable battery management, and automotive body electronics requiring stable component supply and long-term industrial-grade availability.
Supply support for IRLML2803TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.
The IRLML series targets low-voltage, surface-mount power switching applications, emphasizing logic-level drive compatibility, thermal robustness in miniature packages, and qualification for extended temperature and reliability requirements in embedded systems.
FAQ
What is the maximum safe operating voltage for IRLML2803TRPBF-1 in continuous DC applications?
The absolute maximum drain-to-source voltage (VDS) is 30 V. Operation above this value risks irreversible breakdown, even momentarily. For reliable design, derate to ≤24 V in 12 V automotive or industrial systems to accommodate transients and ensure margin against VDS spikes during switching or load dump events.
Can IRLML2803TRPBF-1 be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, and it achieves full enhancement (RDS(on) ≤ 0.25 Ω) at VGS = 4.5 V. A 3.3 V GPIO will deliver ~1.0 A continuous current with acceptable on-resistance (~0.35 Ω), making it suitable for moderate-duty-cycle switching without external level shifters.
Does IRLML2803TRPBF-1 require a gate resistor for stability in PWM applications?
A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by trace inductance and MOSFET input capacitance. While not strictly required for functionality, omitting it may cause shoot-through in half-bridge configurations or increase EMI in high-frequency (>100 kHz) switching due to fast dv/dt edges from its 3.3 nC Qg.
Is thermal relief necessary when soldering IRLML2803TRPBF-1 on a standard FR4 PCB?
No dedicated thermal relief is needed - the SOT-23 package has no exposed thermal pad. However, keep copper area around drain (pin 3) minimal to avoid excessive heat sinking that could mask true junction temperature rise. For >500 mW sustained dissipation, add 2–4 thermal vias under the drain pad to inner ground planes to improve RθJA by ~30–50 °C/W.
IRLML2803TRPBF-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 910mA, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 85 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 540mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro3™/SOT-23
IRLML2803TRPBF-1 FAQ
1.How can I place an order for IRLML2803TRPBF-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLML2803TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLML2803TRPBF-1 reliable?
The price and inventory of IRLML2803TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML2803TRPBF-1 is usually 5 days.
3.What payment methods are accepted for IRLML2803TRPBF-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML2803TRPBF-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLML2803TRPBF-1?
IRLML2803TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLML2803TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLML2803TRPBF-1?
For technical support, including IRLML2803TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML2803TRPBF-1 requirements.
6.How does Aetrix verify that IRLML2803TRPBF-1 is sourced from the original manufacturer or authorized distributors?
All IRLML2803TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML2803TRPBF-1 meets industry standards.
7.What is the process for return or replacement of IRLML2803TRPBF-1?
All IRLML2803TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRLML2803TRPBF-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLML2803TRPBF-1 part is unused and in its original packaging.
Return procedure for IRLML2803TRPBF-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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