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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

UMW IRLML5103TR

Name: IRLML5103TR
Brand: UMW
SKU: IRLML5103TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML5103TR

Manufacturer:: UMW

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRLML5103TR.pdf

Description:: MOSFET P-CH 30V 760MA SOT23

Quantity:: RFQ Add To RFQ list

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Inventory:2,990

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Product details

Overview

IRLML5103TR from Infineon Technologies is a P-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for -20 V V_DS, -3.0 A continuous drain current at T_J = 150°C, and 0.095 Ω R_DS(on) at V_GS = −4.5 V. It serves as a low-side load switch in portable power management circuits, including USB port protection and battery-powered logic-level switching.

For engineers reviewing the IRLML5103TR datasheet, IRLML5103TR pinout, IRLML5103TR application, or IRLML5103TR equivalent, key selection criteria include guaranteed R_DS(on) at 4.5 V gate drive, SOT-23 thermal performance under pulsed loads, body diode recovery characteristics, and lead-free Micro3 marking compliance per JEDEC TO-236AB.

Technical Context

This device operates as a voltage-controlled unidirectional switch with fully specified on-resistance down to V_GS = −3.0 V, enabling direct interface with 3.3 V and 5 V logic outputs. Its optimized gate charge (Q_G = 4.0 nC typ.) and low input capacitance (C_iss = 270 pF) support fast switching in high-frequency DC-DC converter synchronous rectification and PWM-driven LED dimming.

The integrated body diode exhibits t_rr = 35 ns and Q_rr = 12 nC at I_F = −0.6 A, V_DD = −16 V, and dI/dt = −100 A/μs - critical for minimizing reverse recovery losses in flyback and buck-boost topologies where bidirectional conduction is not required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum blocking voltage before avalanche conduction in reverse-biased drain-source path
I_D (continuous)	−3.0 A at T_J = 150°C: Sustained current capability with derating above 25°C ambient
R_DS(on)	0.095 Ω @ V_GS = −4.5 V: On-state resistance determining conduction loss in load-switch applications
Q_G	4.0 nC typ.: Total gate charge defining drive strength requirement for 100 kHz–1 MHz switching
C_iss	270 pF @ V_DS = −10 V: Input capacitance affecting gate driver slew rate and EMI generation
t_r/t_f	12 ns / 15 ns @ I_D = −1.5 A: Rise/fall times measured under standardized test conditions with 50 Ω source impedance
T_J max	150°C: Maximum junction temperature defining safe operating area limits and thermal design margin

Pinout & Package

IRLML5103TR uses the Micro3™ (SOT-23 / TO-236AB) surface-mount package with 3 terminals: Drain (Pin 1), Gate (Pin 2), Source (Pin 3). The package supports reflow soldering per IPC-J-STD-020 and has a thermal resistance R_θJA = 200°C/W on standard FR-4 PCB with 1-in² copper pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Current sink node	Connected to negative rail or load return; carries full switched current and must be routed with low-inductance layout
Pin 2 (Gate)	Control input	High-impedance terminal requiring clean, low-noise drive; susceptible to ESD damage without proper handling
Pin 3 (Source)	Reference node	Bonded to internal substrate; forms common reference for gate drive and body diode cathode

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤ 0.12 Ω at V_GS = −2.5 V enables direct interface with 3.3 V microcontrollers
Low gate charge	Q_G = 4.0 nC minimizes driver power loss and allows use of small-area gate resistors
Fast switching	t_on/t_off < 25 ns ensures minimal overlap loss in synchronous rectifier operation
Halogen-free construction	Meets IEC 61249-2-21 requirements for environmentally compliant PCB assembly
JEDEC TO-236AB footprint	Enables drop-in replacement with industry-standard SOT-23 passive and discrete components

Applications

USB Power Switching

Smartphone Battery Protection

Use Scenario: Selective enable/disable of 5 V USB VBUS to peripheral devices during system sleep or fault conditions.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as controlled current path between battery and USB port, driven by baseband processor GPIO.

Use Value: Achieves <1 μA quiescent current in off-state while supporting 3 A peak load with <300 mW conduction loss at full load.

Use Scenario: Isolation of Li-ion battery from system load during overtemperature or short-circuit events detected by fuel gauge IC.

IC Role / Device Role / Timing Role: Reverse-polarity protected load switch placed between battery anode and system ground plane.

Use Value: Enables fail-safe shutdown within 100 μs using integrated thermal shutdown feedback loop and low R_DS(on) to minimize voltage drop during normal operation.

LED Backlight Dimming

Industrial Sensor Node Power Gating

Use Scenario: PWM-controlled current sink for white LED strings in handheld medical displays.

IC Role / Device Role / Timing Role: High-side switch (with bootstrap or charge pump) or low-side switch in constant-current LED driver stage.

Use Value: Supports 20 kHz PWM frequency with <5% duty-cycle distortion due to fast t_f and low C_oss, preserving dimming linearity.

Use Scenario: Periodic wake-up of ultra-low-power sensor nodes (e.g., temperature/humidity) powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Main power rail switch controlled by real-time clock interrupt to reduce system standby current.

Use Value: Delivers <10 nA off-state leakage and 0.095 Ω on-resistance, extending battery life beyond 5 years in 1-minute wake interval mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2013LFG-7	R_DS(on) = 0.11 Ω @ −4.5 V; higher Q_G = 5.2 nC; same SOT-23 package	Slightly higher conduction loss but improved SOA robustness for repetitive avalanche stress	Prefer when operating near absolute maximum V_DS with transient overvoltage risk
SI2301DS-T1-BE3	R_DS(on) = 0.12 Ω @ −4.5 V; lower Q_G = 3.3 nC; same pinout and marking convention	Reduced gate drive energy but tighter R_DS(on) tolerance (±30% vs ±25%)	Prefer for cost-sensitive consumer designs where minor R_DS(on) variation is acceptable

Compared with DMN2013LFG-7 and SI2301DS-T1-BE3, IRLML5103TR offers the lowest R_DS(on) at −4.5 V among SOT-23 P-channel MOSFETs, making it optimal for thermally constrained battery-powered systems where conduction loss dominates total power budget.

Availability

IRLML5103TR is available at Aetrix Electronics and suitable for USB power switching, smartphone battery protection, LED backlight dimming, and industrial sensor node power gating requiring stable component supply across production lifecycles.

Supply support for IRLML5103TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLML series targets space-constrained portable electronics, delivering logic-level P-channel MOSFETs optimized for low-voltage battery operation, fast switching, and JEDEC-compliant SOT-23 packaging.

FAQ

What is the maximum safe gate-source voltage for IRLML5103TR?

The absolute maximum V_GS rating is ±12 V. Exceeding this value risks permanent gate oxide breakdown. In practice, gate drive should be limited to −10 V maximum to ensure long-term reliability, especially under transient conditions. The device is characterized down to −3.0 V for logic compatibility, but sustained operation below −2.5 V increases R_DS(on) significantly.

Can IRLML5103TR be used in linear (analog) regulation mode?

No - IRLML5103TR is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability above 1 A at V_DS > 5 V, and thermal runaway risk is high due to positive temperature coefficient of R_DS(on). It is designed exclusively for switching applications with defined on/off states and pulse-width-limited conduction.

Does IRLML5103TR have built-in ESD protection?

Yes - the device incorporates on-chip gate protection diodes rated to ±2 kV HBM per JESD22-A114. However, these are not sufficient for handling board-level ESD events. External 100 kΩ gate resistor and 10 nF ceramic capacitor to source are recommended for robust system-level protection in handheld or exposed-interface applications.

How does the Micro3™ package marking "D" identify this part?

Per Infineon's Micro3 marking code table, the letter "D" stamped on the top surface identifies the IRLML5103TR specifically. This single-character code distinguishes it from other variants in the same package family (e.g., "A" = IRLML2402, "B" = IRLML2803), ensuring correct visual identification during manual assembly and automated optical inspection.

IRLML5103TR Specifications

Product attributes: Attribute value

Manufacturer:: UMW

Series:: *

Package/Case:: -

Packaging:: Cut Tape (CT)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRLML5103TR FAQ

1.How can I place an order for IRLML5103TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML5103TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML5103TR reliable?

The price and inventory of IRLML5103TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML5103TR is usually 5 days.

3.What payment methods are accepted for IRLML5103TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML5103TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML5103TR?

IRLML5103TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML5103TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML5103TR?

For technical support, including IRLML5103TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML5103TR requirements.

6.How does Aetrix verify that IRLML5103TR is sourced from the original manufacturer or authorized distributors?

All IRLML5103TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML5103TR meets industry standards.

7.What is the process for return or replacement of IRLML5103TR?

All IRLML5103TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLML5103TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML5103TR part is unused and in its original packaging.

Return procedure for IRLML5103TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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