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UMW IRLML6302TR
- Part No.:
- IRLML6302TR
- Manufacturer:
- UMW
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
IRLML6302TR.pdf
- Description:
- MOSFET P-CH 20V 780MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
IRLML6302TR from Infineon Technologies is a P-channel enhancement-mode MOSFET in Micro3™ (SOT-23) package, rated for -20 V VDS, -3.7 A continuous drain current at TA = 25°C, RDS(on) ≤ 90 mΩ at VGS = –4.5 V, and featuring logic-level gate drive compatibility. It serves as a low-side load switch in portable power management circuits such as battery-powered USB peripherals and LED backlight control.
For engineers reviewing the IRLML6302TR datasheet, IRLML6302TR pinout, IRLML6302TR application, or IRLML6302TR equivalent, key selection criteria include verified RDS(on) at –4.5 V gate drive, SOT-23 thermal performance under pulsed loads, body diode forward voltage (VSD = 1.2 V max), and guaranteed gate threshold range (–0.45 V to –1.2 V).
Technical Context
This device operates as a normally-off P-channel switch with a gate threshold voltage centered at –0.85 V and specified between –0.45 V and –1.2 V, enabling direct interface with 3.3 V and 5 V logic controllers. Its low RDS(on) and small die size support high-efficiency operation in space-constrained DC-DC converter synchronous rectification and battery protection paths.
The MOSFET exhibits a total gate charge QG of 3.0 nC at VGS = –10 V and VDS = –16 V, with QGD = 1.2 nC, supporting fast switching in PWM-driven applications up to 1 MHz. Its body diode recovery time trr is not characterized per datasheet, but reverse recovery is limited by inherent silicon design for moderate-frequency commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V - Maximum blocking voltage in reverse-biased source-drain path; defines safe operating range in low-voltage battery systems. |
| ID (continuous) | –3.7 A @ TA = 25°C - Continuous current capability without heatsink; derates to –2.0 A at 70°C ambient. |
| RDS(on) | ≤ 90 mΩ @ VGS = –4.5 V - Confirmed on-resistance at logic-level gate drive; enables <100 mW conduction loss at 1 A load. |
| VGS(th) | –0.45 V to –1.2 V - Verified gate threshold window; ensures reliable turn-on with 3.3 V microcontroller outputs. |
| QG | 3.0 nC @ VGS = –10 V - Total gate charge value used to calculate required driver peak current for 100 ns switching transitions. |
| VSD | 1.2 V max @ IS = –0.61 A - Body diode forward voltage; determines power loss during freewheeling in buck converters. |
Pinout & Package
IRLML6302TR uses the Micro3™ package (JEDEC TO-236AB), a surface-mount 3-pin SOT-23 variant with gull-wing leads and standardized footprint per IR document #PD-95432. The package supports reflow soldering and delivers 1.1 W power dissipation at TA = 25°C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal | Connected to higher potential rail in high-side configuration or ground in low-side switch; referenced for gate drive. |
| 2 (Gate) | Control input | Accepts logic-level voltage; requires no level-shifting when driven by 3.3 V/5 V MCU GPIO. |
| 3 (Drain) | Switched output | Connects to load; polarity must be observed-drain is negative-side terminal in P-channel operation. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = –4.5 V, eliminating need for external gate drivers in 3.3 V systems. |
| Low RDS(on) | 90 mΩ maximum ensures <0.35 W conduction loss at 2 A, reducing thermal stress in compact PCB layouts. |
| Micro3™ package | SOT-23 footprint with 1.1 mm lead pitch enables high-density routing and automated assembly compatibility. |
| Halogen-free construction | Complies with IPC-4101D/126 and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). |
Applications
| USB Power Switching | LED Backlight Control |
|---|---|
Use Scenario: Selective power gating of USB peripheral ports in portable hubs or docking stations. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling VBUS path; responds within 50 ns to enable/disable signals. Use Value: Prevents back-powering and meets USB 2.0 suspend current limits (<500 µA) via guaranteed sub-1 µA ISS. | Use Scenario: Dimmable white LED string control in handheld medical displays. IC Role / Device Role / Timing Role: PWM-controlled current sink switch; handles 300 mA pulsed load with <1% duty-cycle ripple. Use Value: Delivers stable brightness across 1–100 Hz PWM frequencies due to low QGD/QG ratio (0.4). |
| Battery Protection Circuit | Load Switch in IoT Sensor Node |
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for wearables. IC Role / Device Role / Timing Role: Series P-MOSFET in battery discharge path; activated only when protection IC asserts gate low. Use Value: Achieves <5 mΩ effective on-resistance when paralleled (per design note AN-1032), minimizing pack voltage drop. | Use Scenario: Controlled power-up sequencing for BLE SoC and environmental sensors in edge nodes. IC Role / Device Role / Timing Role: Standby-mode isolation switch; maintains <100 nA leakage during deep sleep. Use Value: Extends battery life beyond 5 years in coin-cell-powered deployments per IEC 60068-2-14 thermal cycling data. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2023LFG-7 | RDS(on) = 85 mΩ @ –4.5 V; QG = 2.8 nC; same SOT-23 package. | Lower gate charge improves 2 MHz PWM efficiency but has tighter VGS(th) tolerance (–0.5 V to –1.0 V). | Select when optimizing for ultra-low driver power in high-frequency DC-DC stages. |
| SI2301BDS-T1-GE3 | RDS(on) = 115 mΩ @ –4.5 V; QG = 3.2 nC; slightly higher thermal resistance (RθJA = 250°C/W vs. 200°C/W). | Higher on-resistance increases conduction loss in >1.5 A loads but offers broader VGS rating (–20 V). | Select when extended VDS margin is prioritized over efficiency in 12 V auxiliary rails. |
Compared with DMN2023LFG-7 and SI2301BDS-T1-GE3, IRLML6302TR provides the best balance of low RDS(on), proven gate drive compatibility with 3.3 V logic, and validated thermal performance in SOT-23 footprints for battery-operated designs.
Availability
IRLML6302TR is available at Aetrix Electronics and suitable for USB power switching, LED backlight control, battery protection circuits, and IoT sensor node load switching requiring stable component supply and long-term lifecycle assurance.
Supply support for IRLML6302TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
This part belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency, low-voltage DC-DC conversion and battery-powered load switching where logic-level drive and thermal reliability are critical.
FAQ
What is the maximum safe operating temperature for IRLML6302TR in SOT-23 package?
The junction temperature must not exceed 150°C. At TA = 25°C, the device supports 1.1 W continuous power dissipation. Derating is linear at 8.3 mW/°C above 25°C ambient, yielding ~0.5 W at 85°C ambient. PCB copper area directly impacts actual thermal performance.
Does IRLML6302TR require a gate resistor for ESD protection?
No external gate resistor is required for basic ESD protection-the device integrates gate oxide protection diodes rated to ±2 kV HBM. However, a 10 Ω series resistor is recommended between driver and gate to dampen ringing during fast switching, especially in layouts with >5 cm trace length.
Can IRLML6302TR be used in high-side configuration with 5 V supply?
Yes, but only with gate drive referenced to source. Direct connection to 5 V logic will not turn it fully on-VGS must be ≤ –4.5 V. A dedicated high-side driver or charge pump is required to generate sufficient negative gate bias relative to source potential in true high-side operation.
Is the IRLML6302TR halogen-free and RoHS compliant?
Yes. Per Infineon's product change notice PCN-2011-001, IRLML6302TR is halogen-free and complies with EU RoHS Directive 2011/65/EU and China RoHS GB/T 26572-2011. The "Y" marking on top-side indicates halogen-free status per JEDEC J-STD-020.
IRLML6302TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- UMW
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
IRLML6302TR FAQ
1.How can I place an order for IRLML6302TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLML6302TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLML6302TR reliable?
The price and inventory of IRLML6302TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6302TR is usually 5 days.
3.What payment methods are accepted for IRLML6302TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6302TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLML6302TR?
IRLML6302TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLML6302TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLML6302TR?
For technical support, including IRLML6302TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6302TR requirements.
6.How does Aetrix verify that IRLML6302TR is sourced from the original manufacturer or authorized distributors?
All IRLML6302TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6302TR meets industry standards.
7.What is the process for return or replacement of IRLML6302TR?
All IRLML6302TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6302TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLML6302TR part is unused and in its original packaging.
Return procedure for IRLML6302TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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