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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLML6402TRPBF-1

Name: IRLML6402TRPBF-1
Brand: Infineon Technologies
SKU: IRLML6402TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLML6402TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: IRLML6402TRPBF-1.pdf

Description:: MOSFET P-CH 20V 3.7A SOT23

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Product details

Overview

IRLML6402TRPBF-1 from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in Micro3™ (SOT-23) package, rated for -20 V V_DS, 0.065 Ω R_DS(on) at -4.5 V V_GS, -3.7 A continuous drain current at 25°C, and optimized for low-voltage load switching in space-constrained DC-DC converters and battery protection circuits.

For engineers reviewing the IRLML6402TRPBF-1 datasheet, IRLML6402TRPBF-1 pinout, IRLML6402TRPBF-1 application, or IRLML6402TRPBF-1 equivalent, key selection criteria include verified R_DS(on) at -4.5 V, SOT-23 thermal performance under pulsed load, body diode recovery characteristics (t_rr = 29 ns), and industrial-grade MSL1 reliability qualification.

Technical Context

This device operates as a single P-channel switch with gate threshold voltage of -0.55 V (typical), enabling direct interface with 3.3 V logic controllers without level shifting. Its low gate charge (Q_g = 8.0 nC) supports high-frequency PWM operation up to 1 MHz in synchronous buck topologies.

The integrated body diode exhibits V_SD = -1.2 V at -1.0 A and fast reverse recovery (Q_rr = 11 nC), making it suitable for freewheeling paths where low conduction loss and minimal switching loss trade-offs are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-side switching in ≤12 V systems
R_DS(on) @ V_GS = -4.5 V	0.065 Ω - Enables ≤0.1 W conduction loss at -3.7 A, critical for thermally limited PCBs
I_D (continuous, 25°C)	-3.7 A - Sustained load current capability without derating in ambient-cooled SOT-23 layouts
Q_g (total)	8.0 nC - Reduces gate drive power and enables efficient 500 kHz–1 MHz switching in compact DC-DC stages
t_rr	29 ns (typ) - Limits shoot-through risk and EMI during hard-switched transitions with inductive loads
R_θJA	75 °C/W - Defines thermal margin for 1.3 W dissipation in standard FR-4 with 1-in² copper pour
E_AS	11 mJ - Supports robust single-pulse avalanche tolerance in overvoltage transients (e.g., inductive kickback)

Pinout & Package

Package: Micro3™ (SOT-23 / TO-236AB), 3-pin surface-mount, JEDEC-compliant outline with 1.9 mm × 1.6 mm footprint and 0.95 mm height. MSL1 rating ensures reliable reflow soldering without moisture-related defects.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤12 V negative bias; low input capacitance (C_iss = 633 pF) minimizes driver loading
2 (S)	Source	Reference node for gate drive; connects to system ground or higher potential depending on high-side/low-side configuration
3 (D)	Drain	Power output terminal; internally connected to the MOSFET channel and body diode cathode

Key Features

Feature	Design Value
Industry-standard SOT-23 pinout	Enables drop-in replacement across multiple vendors without PCB redesign
RoHS-compliant, halogen-free construction	Meets IPC-1752A material declaration requirements for automotive and industrial end equipment
MSL1 moisture sensitivity	Eliminates bake preconditioning prior to reflow, reducing manufacturing cycle time and cost
Enhanced avalanche ruggedness	Guarantees 11 mJ single-pulse energy handling without parametric shift or failure
Low V_GS(th) (-0.55 V typ)	Permits full enhancement from 3.3 V microcontroller GPIOs, removing need for external level shifters

Applications

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs with 3.0–4.2 V nominal voltage.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlling charge/discharge path between cell stack and system load.

Use Value: 0.065 Ω R_DS(on) limits voltage drop to <150 mV at 2.3 A, preserving battery runtime and thermal headroom in sealed enclosures.

Use Scenario: Hot-swap enable/disable of USB 2.0 downstream ports in embedded host controllers.

IC Role / Device Role / Timing Role: Load switch isolating VBUS from peripheral devices during enumeration or fault conditions.

Use Value: Fast t_rr (29 ns) and low Q_g (8.0 nC) ensure clean turn-on/off edges, minimizing glitch-induced enumeration failures.

DC-DC Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Low-loss freewheeling path in 5 V input, 3.3 V output buck converters powering FPGA I/O banks.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in secondary-side conduction phase.

Use Value: Body diode V_SD = -1.2 V and Q_rr = 11 nC reduce reverse recovery loss by >40% versus 30 V Schottky alternatives.

Use Scenario: Periodic shutdown of wireless sensor modules (BLE/Zigbee) to extend battery life beyond 5 years.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate isolating MCU, RF transceiver, and analog front-end from supply rail.

Use Value: Gate leakage <100 nA at V_GS = 12 V ensures <1 μA total off-state current, meeting stringent energy harvesting budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 0.055 Ω @ -4.5 V, but higher Q_g = 10.5 nC and lower E_AS = 7 mJ	Better conduction efficiency at high duty cycles; less robust under transient overvoltage	Prefer when thermal budget dominates over transient immunity
SI2301BDS-T1-GE3	R_DS(on) = 0.095 Ω @ -4.5 V, lower I_D = -2.7 A, same SOT-23 package	Higher conduction loss but tighter V_GS(th) distribution (−0.4 to −0.8 V)	Prefer when gate drive voltage margin is narrow and consistency matters more than R_DS(on)

Compared with DMN2020LFG-7 and SI2301BDS-T1-GE3, the IRLML6402TRPBF-1 delivers optimal balance of low R_DS(on), moderate Q_g, and industry-leading avalanche energy-making it ideal for cost-sensitive, reliability-critical load switches where both efficiency and ruggedness are non-negotiable.

Availability

IRLML6402TRPBF-1 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery subsystems, and industrial IoT sensor nodes requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRLML6402TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability discrete switching in portable, battery-powered, and space-constrained industrial applications.

FAQ

What is the maximum safe operating temperature for IRLML6402TRPBF-1?

The junction temperature must not exceed +150°C under any operating condition. At ambient temperatures above 70°C, power dissipation must be linearly derated at 0.01 W/°C, limiting usable power to 0.8 W at 70°C and below 0.5 W at 100°C ambient-verified per Fig. 9 in the official datasheet.

Can IRLML6402TRPBF-1 be used in high-side switch configurations?

Yes-it supports high-side switching when the source is tied to the positive rail and gate is driven negatively relative to source. With V_GS(th) as low as -0.4 V, a -5 V gate drive fully enhances the device, enabling use with dedicated high-side drivers like the IRS2001 or discrete bootstrap circuits.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by parasitic inductance in PCB traces and prevent unintended oscillation during switching. The device's C_iss = 633 pF and low gate threshold make it susceptible to noise coupling without proper gate impedance control.

Is the body diode suitable for continuous freewheeling current?

The integrated body diode supports continuous reverse current up to -1.3 A (I_S) at 25°C, with V_SD = -1.2 V at -1.0 A. For sustained freewheeling, thermal design must account for diode conduction loss-especially at elevated temperatures where V_SD increases and R_DS(on) degrades.

IRLML6402TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro3™/SOT-23

IRLML6402TRPBF-1 FAQ

1.How can I place an order for IRLML6402TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLML6402TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLML6402TRPBF-1 reliable?

The price and inventory of IRLML6402TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLML6402TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRLML6402TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLML6402TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLML6402TRPBF-1?

IRLML6402TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLML6402TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLML6402TRPBF-1?

For technical support, including IRLML6402TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLML6402TRPBF-1 requirements.

6.How does Aetrix verify that IRLML6402TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRLML6402TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLML6402TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRLML6402TRPBF-1?

All IRLML6402TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRLML6402TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLML6402TRPBF-1 part is unused and in its original packaging.

Return procedure for IRLML6402TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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