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Vishay Siliconix IRLR024

Part No.:
IRLR024
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR024.pdf
Description:
MOSFET N-CH 60V 14A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,763

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Product details

Overview

IRLR024 from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 60 V VDS, 14 A continuous drain current at TC = 25 °C, and 0.10 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 18 nC total gate charge and supports unclamped inductive switching up to 53 mJ, making it suitable for DC-DC converters and motor control circuits.

For engineers reviewing the IRLR024 datasheet, IRLR024 pinout, IRLR024 application, or IRLR024 equivalent, this page provides verified electrical parameters, thermal resistance values (RthJC = 3.0 °C/W), body diode recovery characteristics (trr = 130–260 ns), and validated alternative part options for industrial power switching designs.

Technical Context

The IRLR024 employs third-generation trench MOSFET technology optimized for low conduction loss and high dV/dt immunity. Its gate threshold voltage (1.0–2.0 V) enables direct drive from 3.3 V or 5 V logic, while its dynamic dV/dt rating of 4.5 V/ns ensures robust operation in noisy switching environments.

Designed for PCB-mount thermal performance, the device achieves 2.5 W maximum power dissipation on a 1" square FR-4 board and supports avalanche energy handling (EAS = 53 mJ) without external snubbers-critical for flyback and H-bridge topologies where inductive load transients occur.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V nominal rails
RDS(on) @ VGS = 5 V0.10 Ω - Enables ≤1.2 W conduction loss at 11 A, reducing heatsink requirements in compact layouts
Qg18 nC - Low gate charge allows efficient 100–500 kHz PWM operation with standard gate drivers
ID (continuous)14 A @ TC = 25 °C - Supports medium-power loads such as BLDC gate drivers and solenoid controllers
trr130–260 ns - Fast body diode recovery minimizes shoot-through risk and reduces EMI in synchronous rectification
RthJC3.0 °C/W - Enables direct thermal coupling to copper pour or heatsink for sustained 9.2 A operation at TC = 100 °C
EAS53 mJ - Rated unclamped inductive energy absorption eliminates need for external clamping in relay/snubberless designs

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB routing and automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputLogic-level compatible (VGS(th) = 1.0–2.0 V); requires <100 nA leakage current management in high-impedance bias networks
D (Drain)High-side switch nodeExposed metal pad on bottom surface - must be connected to large copper area for thermal conduction and low-inductance return path
S (Source)Power return referenceCommon source node for gate drive loop; critical for minimizing LS-induced shoot-through during fast switching

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = 4.0 V (RDS(on) = 0.14 Ω), enabling direct interface with microcontrollers and low-voltage ASICs
Dynamic dV/dt rating4.5 V/ns immunity prevents false turn-on during high-slew-rate transients in half-bridge configurations
Fast switching11 ns turn-on delay + 110 ns rise time enables >300 kHz operation with minimal overlap loss in SMPS
Ruggedized designRated for repetitive avalanche (EAS = 53 mJ) and peak diode recovery dV/dt (4.5 V/ns), supporting reliable operation in inductive load switching
Surface-mount packagingDPAK (TO-252) footprint supports vapor-phase reflow and offers 3× higher power density than through-hole IPAK equivalents

Applications

Motor ControlDC-DC Conversion

Use Scenario: Driving brushed DC motors in industrial actuators and HVAC dampers requiring bidirectional PWM control at 20–100 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge topology, handling 10–12 A continuous current with fast turn-off to prevent cross-conduction.

Use Value: 0.10 Ω RDS(on) limits I²R loss to <1.4 W at 12 A, while 130 ns body diode recovery enables clean commutation without external freewheeling diodes.

Use Scenario: Synchronous rectifier in 12 V–48 V input buck converters for telecom power supplies and PoE injectors.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 85%.

Use Value: 18 nC Qg allows gate drive with low-power controllers; 53 mJ EAS rating absorbs leakage inductance spikes during light-load discontinuous conduction mode.

Power OR-ingLoad Switching

Use Scenario: Redundant 24 V power supply selection in industrial PLC backplanes where fault isolation and hot-swap capability are required.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with controlled turn-on/turn-off sequencing.

Use Value: Logic-level VGS(th) enables precise gate control using simple op-amp comparators; 4.5 V/ns dV/dt rating prevents latch-up during supply switchover transients.

Use Scenario: High-current system power rail enable/disable in battery-powered test equipment and portable instrumentation.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) load switch managing 8–10 A loads with soft-start and inrush current limiting.

Use Value: 14 A continuous rating supports peak surge currents; exposed drain pad allows direct thermal coupling to chassis ground for stable 9.2 A operation at 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR2905Higher VDS (55 V vs. 60 V), lower RDS(on) (0.077 Ω @ 5 V), larger Qg (34 nC)Better conduction efficiency but slower switching; requires stronger gate driver for same frequencyChoose IRLR2905 when lower RDS(on) dominates over switching loss in <200 kHz applications
SiHLR024Pb-free/halogen-free variant of same die and DPAK package; identical RDS(on), Qg, and thermal specsNo functional difference; selected for RoHS-compliant manufacturing and extended lifecycle sourcingChoose SiHLR024 when lead-free compliance or Vishay's newer material categorization (doc# 99912) is mandated

Compared with IRLR024, IRLR2905 trades faster switching for lower conduction loss, while SiHLR024 maintains identical electrical and thermal behavior with updated environmental compliance-making IRLR024 optimal for cost-sensitive, non-RoHS-restricted 60 V power switching where gate drive strength is limited.

Availability

IRLR024 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, power OR-ing, and load switching applications requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for IRLR024 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLR024 belongs to Vishay's third-generation logic-level power MOSFET product line, engineered specifically for surface-mount power switching in space-constrained, thermally demanding applications where gate drive simplicity and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for IRLR024 at 100 °C case temperature?

The IRLR024 supports 9.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and assumes proper PCB copper area for heat spreading. At TC = 25 °C, the rating increases to 14 A, with linear derating at 0.33 W/°C between those points. The IRLR024 datasheet confirms this value under standard test conditions with no additional heatsinking.

Does IRLR024 require a gate resistor for safe operation in switching applications?

Yes, the IRLR024 benefits from an external gate resistor to control dI/dt and suppress ringing caused by parasitic inductance in the gate loop. While not strictly mandatory for low-frequency on/off use, Vishay recommends Rg = 9.0 Ω for standardized switching characterization (td(on) = 11 ns, tr = 110 ns). For 100–500 kHz PWM, a 5–22 Ω resistor balances switching speed against EMI and shoot-through risk. The IRLR024 gate capacitance (Ciss = 870 pF) makes gate drive impedance critical to timing consistency.

Can IRLR024 be used in avalanche mode repeatedly, and what is its rated energy?

Yes, the IRLR024 is rated for repetitive avalanche operation with a single-pulse avalanche energy (EAS) of 53 mJ under defined test conditions (VDD = 25 V, IAS = 14 A, TJ = 25 °C). This capability is built into the device's ruggedized trench structure and allows safe operation in inductive switching without external snubbers. However, repetitive avalanche must respect pulse width and duty cycle limits per Figure 11 to avoid exceeding TJ(max) = 150 °C. The IRLR024 datasheet explicitly validates this rating.

What is the body diode forward voltage of IRLR024, and how does it affect synchronous rectification?

The IRLR024 body diode forward voltage (VSD) is 1.5 V at TJ = 25 °C and IS = 14 A with VGS = 0 V. In synchronous rectification, this VF determines conduction loss before the MOSFET channel turns on. Because the IRLR024 has relatively high VSD compared to Schottky diodes (~0.5 V), it is best deployed where its low RDS(on) advantage outweighs body diode loss-typically in high-current (>5 A), medium-frequency (>100 kHz) buck converters where channel conduction dominates total loss. The IRLR024 body diode recovery time (trr = 130–260 ns) also impacts reverse recovery loss during dead-time transitions.

Is IRLR024 pin-compatible with IRLU024, and what is the key mechanical difference?

No, IRLR024 is not pin-compatible with IRLU024. The IRLR024 uses a DPAK (TO-252) surface-mount package with gull-wing leads and an exposed drain pad, while the IRLU024 uses an IPAK (TO-251) through-hole package with straight leads and no thermal pad. Although both share identical silicon die and electrical specifications (VDS = 60 V, RDS(on) = 0.10 Ω, Qg = 18 nC), their footprints, soldering methods, and thermal mounting approaches differ fundamentally. Substituting IRLR024 for IRLU024 requires PCB redesign. The IRLR024 datasheet explicitly distinguishes these variants in the Ordering Information table.

IRLR024 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 8.4A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRLR024 FAQ

1.How can I place an order for IRLR024 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024 reliable?

The price and inventory of IRLR024 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024 is usually 5 days.

3.What payment methods are accepted for IRLR024?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024?

IRLR024 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024?

For technical support, including IRLR024 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024 requirements.

6.How does Aetrix verify that IRLR024 is sourced from the original manufacturer or authorized distributors?

All IRLR024 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024 meets industry standards.

7.What is the process for return or replacement of IRLR024?

All IRLR024 units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024 part is unused and in its original packaging.

Return procedure for IRLR024:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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