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Vishay Siliconix IRLR110PBF

Part No.:
IRLR110PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR110PBF.pdf
Description:
MOSFET N-CH 100V 4.3A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:210

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Product details

Overview

IRLR110PBF from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V VDS, 4.3 A continuous drain current at TC = 25 °C, and 0.54 Ω RDS(on) at VGS = 5 V. It supports fast switching in DC-DC converters and motor control circuits with 6.1 nC total gate charge and 5.5 V/ns peak diode recovery dV/dt rating.

For engineers reviewing the IRLR110PBF datasheet, IRLR110PBF pinout, IRLR110PBF application, or IRLR110PBF equivalent, this page delivers verified electrical specs, thermal derating behavior, avalanche capability, PCB-mount power dissipation limits, and validated alternative options for industrial power switching designs.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for low conduction loss and rugged unclamped inductive switching. Its dynamic dV/dt rating and repetitive avalanche capability (IAR = 4.3 A, EAR = 2.5 mJ) enable reliable operation in flyback and buck converter topologies without external snubbers.

The device features logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), enabling direct interfacing with 3.3 V and 5 V microcontrollers. Its RDS(on) is specified at both VGS = 4 V (0.76 Ω) and 5 V (0.54 Ω), supporting robust turn-on under marginal gate drive conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage before breakdown; suitable for 48 V input systems with safety margin.
RDS(on) @ VGS = 5 V 0.54 Ω - Conduction loss of ≤120 mW at 2.6 A; enables efficient low-power switching in compact layouts.
ID (continuous, TC = 25 °C) 4.3 A - Sustained current capability when mounted on heatsink; derates linearly to 2.7 A at 100 °C case temperature.
Qg 6.1 nC - Gate drive energy requirement; allows fast turn-on with <12 Ω gate resistor and minimal driver stress.
EAS 100 mJ - Single-pulse avalanche energy; permits safe operation during inductive load turn-off transients.
RthJC 5.0 °C/W - Junction-to-case thermal resistance; supports 25 W power dissipation with adequate heatsinking.
dV/dt (peak diode recovery) 5.5 V/ns - Minimum rate-of-change tolerance during body diode commutation; reduces risk of false turn-on.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead finish is Pb-free and halogen-free per IRLR110PbF-BE3 ordering code.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Accepts logic-level voltage (1.0–2.0 V threshold); requires <100 nA leakage current handling in driver design.
D (Drain) High-side power switch node Connected to internal die backside and exposed thermal pad; must be routed to ground plane or heatsink for thermal management.
S (Source) Power return and reference node Serves as local ground reference for gate drive; source inductance (LS = 7.5 nH) impacts switching speed and ringing.

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced at VGS = 4 V - eliminates need for gate boosters in 3.3 V/5 V MCU-controlled systems.
Repetitive avalanche rated Rated for IAR = 4.3 A and EAR = 2.5 mJ - enables reliable unclamped inductive switching without external protection.
Dynamic dV/dt rating 5.5 V/ns minimum - suppresses parasitic turn-on during high-speed body diode recovery in half-bridge configurations.
Surface-mount DPAK package TO-252 outline with thermal pad - supports up to 2.5 W power dissipation on FR-4 PCB and 25 W with heatsink mounting.
Low Qgd/Qg ratio Qgd = 3.3 nC / Qg = 6.1 nC → 54% - improves Miller immunity and enables stable hard-switching above 100 kHz.

Applications

DC-DC Buck Converter Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24–48 V input to 3.3 V or 5 V for embedded controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz PWM frequency.

Use Value: 0.54 Ω RDS(on) minimizes conduction loss; 6.1 nC Qg enables clean 200 ns turn-on with 10 Ω gate resistor.

Use Scenario: H-bridge driver for 12–24 V brushed motors in robotics and actuation systems.

IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional current up to 4.3 A continuous.

Use Value: Repetitive avalanche rating protects against inductive kickback during rapid direction reversal without snubber networks.

LED Constant-Current Driver Hot-Swap Controller

Use Scenario: Linear or PWM-based constant-current supply for high-brightness LED strings in signage and lighting.

IC Role / Device Role / Timing Role: Series pass element modulated by analog/PWM signal to regulate LED current.

Use Value: 100 V VDS headroom accommodates 3–5 LED series stacks with 24 V bus; low RDS(on) reduces thermal load.

Use Scenario: Inrush current limiting and fault isolation in 12 V/24 V board-level power distribution.

IC Role / Device Role / Timing Role: Active OR-ing and current-limiting switch placed between input and system rail.

Use Value: Body diode forward voltage (VSD = 2.5 V) and reverse recovery time (trr = 100–130 ns) support controlled soft-start and fast fault shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLR024NTRPBF VDS = 55 V, RDS(on) = 0.077 Ω @ 5 V, Qg = 19 nC - lower voltage rating but significantly lower on-resistance and higher gate charge. Not suitable for 48 V bus systems due to 55 V rating; better for 12–24 V high-current loads where conduction loss dominates. Select IRLR024NTRPBF only if system VIN ≤ 36 V and RDS(on) reduction outweighs increased gate drive demand.
SiHLR110-GE3 Identical VDS, RDS(on), Qg, and package; Vishay's newer halogen-free variant with same die and DPAK footprint. No functional or layout difference; qualified for same industrial and automotive temperature ranges (−55 to +150 °C). SiHLR110-GE3 is a drop-in replacement with identical performance and RoHS/halogen-free compliance; preferred for new designs requiring latest material categorization.

Compared with IRLR110PBF, IRLR024NTRPBF trades voltage headroom for lower conduction loss in low-voltage systems, while SiHLR110-GE3 offers identical electrical behavior with updated environmental compliance-making it the most seamless upgrade path for production continuity.

Availability

IRLR110PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED current regulators, and hot-swap controllers requiring stable component supply across industrial and embedded OEM programs.

Supply support for IRLR110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRLR110PBF belongs to Vishay's logic-level Power MOSFET family engineered for cost-sensitive, space-constrained industrial and consumer power conversion applications where gate drive simplicity and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRLR110PBF at 100 °C case temperature?

The IRLR110PBF supports 2.7 A continuous drain current at TC = 100 °C, derived from its 4.3 A rating at 25 °C and linear derating factor of 0.20 W/°C. This reflects thermal limitation-not electrical saturation-and assumes proper PCB copper area or heatsink attachment to the drain pad.

Does IRLR110PBF require a gate resistor, and what value is recommended for 200 kHz switching?

Yes, IRLR110PBF requires an external gate resistor to control dI/dt and suppress oscillation. For 200 kHz PWM with minimal overshoot, a 10 Ω resistor is recommended-balancing 9.3 ns turn-on delay and 47 ns rise time while keeping gate drive current within typical MCU GPIO limits (≤20 mA peak).

Can IRLR110PBF be used in avalanche mode repeatedly, and what are the limits?

Yes, IRLR110PBF is explicitly rated for repetitive avalanche operation: IAR = 4.3 A and EAR = 2.5 mJ per pulse, with pulse width limited by junction temperature. Operation must stay within the SOA curve (Fig. 7) and avoid exceeding TJ(max) = 150 °C-verified via thermal simulation or IR measurement under actual load conditions.

What is the thermal resistance from junction to ambient for IRLR110PBF on a standard PCB?

When mounted on a 1" square FR-4 PCB, IRLR110PBF has RthJA = 50 °C/W. This enables 2.5 W power dissipation at TA = 25 °C. For higher power, the exposed drain pad must connect to a thermal plane or external heatsink to leverage the 5.0 °C/W RthJC path.

Is IRLR110PBF pin-compatible with IRLU110PbF, and what changes are needed for substitution?

No, IRLR110PBF (DPAK/TO-252) is not pin-compatible with IRLU110PbF (IPAK/TO-251): the latter uses through-hole leads with different terminal spacing and no thermal pad. Substitution requires PCB redesign, rework of solder mask and paste layers, and verification of mechanical clearance-making it a board-level change, not a drop-in replacement.

IRLR110PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
540mOhm @ 2.6A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.1 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRLR110PBF FAQ

1.How can I place an order for IRLR110PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR110PBF reliable?

The price and inventory of IRLR110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR110PBF is usually 5 days.

3.What payment methods are accepted for IRLR110PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR110PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR110PBF?

IRLR110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR110PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR110PBF?

For technical support, including IRLR110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR110PBF requirements.

6.How does Aetrix verify that IRLR110PBF is sourced from the original manufacturer or authorized distributors?

All IRLR110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR110PBF meets industry standards.

7.What is the process for return or replacement of IRLR110PBF?

All IRLR110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR110PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR110PBF part is unused and in its original packaging.

Return procedure for IRLR110PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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