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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLR120TRRPBF

Name: IRLR120TRRPBF
Brand: Vishay Siliconix
SKU: IRLR120TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR120TRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR120TRRPBF.pdf

Description:: MOSFET N-CH 100V 7.7A DPAK

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Product details

Overview

IRLR120TRRPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V V_DS, 7.7 A continuous drain current at T_C = 25 °C, and 0.27 Ω R_DS(on) at V_GS = 5 V. It delivers ruggedized switching performance in DC-DC converters, motor control H-bridges, and load-switching circuits where low gate drive voltage and avalanche energy tolerance are critical.

For engineers reviewing the IRLR120TRRPBF datasheet, IRLR120TRRPBF pinout, IRLR120TRRPBF application, or IRLR120TRRPBF equivalent, this device offers verified repetitive avalanche capability (E_AR = 4.2 mJ), dynamic dV/dt rating (5.5 V/ns), and PCB-mount thermal resistance of 50 °C/W - key selection criteria for industrial power stages operating under transient stress.

Technical Context

This third-generation trench MOSFET employs optimized cell geometry and gate oxide design to achieve low R_DS(on) while maintaining robust safe-operating-area (SOA) performance across temperature. Its logic-level gate threshold (1.0–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The device integrates a fast-recovery body diode (t_rr = 110–140 ns, Q_rr = 0.80–1.0 μC) and features low gate charge (Q_g = 12 nC, Q_gd = 7.1 nC), supporting high-frequency switching up to several hundred kHz in hard-switched topologies with minimal driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal systems with 2× safety margin for transients
R_DS(on) @ V_GS = 5 V	0.27 Ω - enables ≤1.0 W conduction loss at 6 A DC load current
Q_g	12 nC - determines gate driver current requirement (~1.2 mA avg. at 100 kHz, 10 V swing)
I_D (continuous, T_C = 25 °C)	7.7 A - defines maximum steady-state current with heatsink or copper pour
E_AS	210 mJ - specifies single-pulse unclamped inductive switching energy handling capability
dV/dt Rating	5.5 V/ns - ensures immunity to parasitic turn-on during high-speed switching in noisy environments
T_J Range	−55 to +150 °C - qualifies for extended industrial and automotive under-hood ambient conditions

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standard 3-pin configuration optimized for automated assembly and PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts logic-level voltage (≥4 V) to fully enhance channel; requires <12 nC total charge for full turn-on
D (Drain)	High-side power terminal	Connected to exposed thermal pad; carries main current path and dissipates heat into PCB copper
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; internal source inductance (L_S = 7.5 nH) affects switching ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4 V - eliminates need for gate driver ICs in 3.3 V/5 V MCU-based designs
Repetitive avalanche rated	Rated for 7.7 A I_AR and 4.2 mJ E_AR - enables reliable operation in inductive load switching without external snubbers
Dynamic dV/dt immunity	5.5 V/ns rating - prevents false triggering during fast voltage transitions in half-bridge or flyback configurations
Low Q_gd/Q_g ratio	7.1 nC / 12 nC = 59% - improves Miller immunity and reduces switching loss during hard commutation
RoHS-compliant & halogen-free	Meets JEDEC JS709A and EU Directive 2011/65/EU - suitable for environmentally regulated industrial and consumer end equipment

Applications

Brushless DC Motor Control	Industrial DC-DC Converters
Use Scenario: Half-bridge phase-leg switching in 24–48 V BLDC drives for HVAC blowers and power tools. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology; handles 7.7 A continuous current with <2.5 V body diode forward drop. Use Value: Logic-level gate enables direct STM32 GPIO drive; 0.27 Ω R_DS(on) limits conduction loss to <1.25 W at full load.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V telecom DC-DC modules. IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: Fast body diode recovery (t_rr ≤ 140 ns) minimizes reverse recovery loss; 210 mJ E_AS withstands output short-circuit events.
Automotive LED Headlamp Drivers	Programmable Load Switches
Use Scenario: High-side current regulation for adaptive front-lighting systems (AFS) with PWM dimming. IC Role / Device Role / Timing Role: N-channel high-side switch with charge pump gate driver; manages 5 A LED string current. Use Value: 100 V V_DS rating accommodates load-dump transients (ISO 7637-2 Pulse 5a); R_DS(on) stability over −40 to +125 °C ensures consistent brightness.	Use Scenario: Hot-swap and inrush control for FPGA or ASIC power rails in test equipment. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate resistor network for controlled slew rate. Use Value: 5.5 V/ns dV/dt immunity prevents spurious turn-on during hot-plug insertion; 150 °C max T_J supports sealed enclosure operation.

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Half-bridge phase-leg switching in 24–48 V BLDC drives for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology; handles 7.7 A continuous current with <2.5 V body diode forward drop.

Use Value: Logic-level gate enables direct STM32 GPIO drive; 0.27 Ω R_DS(on) limits conduction loss to <1.25 W at full load.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Fast body diode recovery (t_rr ≤ 140 ns) minimizes reverse recovery loss; 210 mJ E_AS withstands output short-circuit events.

Automotive LED Headlamp Drivers

Programmable Load Switches

Use Scenario: High-side current regulation for adaptive front-lighting systems (AFS) with PWM dimming.

IC Role / Device Role / Timing Role: N-channel high-side switch with charge pump gate driver; manages 5 A LED string current.

Use Value: 100 V V_DS rating accommodates load-dump transients (ISO 7637-2 Pulse 5a); R_DS(on) stability over −40 to +125 °C ensures consistent brightness.

Use Scenario: Hot-swap and inrush control for FPGA or ASIC power rails in test equipment.

IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate resistor network for controlled slew rate.

Use Value: 5.5 V/ns dV/dt immunity prevents spurious turn-on during hot-plug insertion; 150 °C max T_J supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR024NTRPBF	Lower V_DS (55 V), lower R_DS(on) (0.077 Ω), same DPAK package	Better for ≤24 V systems requiring higher efficiency; not suitable for 48 V+ bus transients	Select when system V_IN ≤ 36 V and R_DS(on) reduction outweighs voltage derating needs
SiHLR120TR-GE3	Identical electrical specs and DPAK footprint; Vishay's newer halogen-free variant with GE3 suffix	No functional difference; preferred for new designs targeting JEDEC JS709A compliance	Drop-in replacement with identical performance; recommended for RoHS/halogen-free BOM updates

Compared with IRLR120TRRPBF, IRLR024NTRPBF trades voltage headroom for lower conduction loss in low-voltage systems, while SiHLR120TR-GE3 provides identical performance with updated environmental compliance - enabling seamless migration without layout or thermal redesign.

Availability

IRLR120TRRPBF is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC conversion, and automotive lighting applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLR120TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The IRLR120TRRPBF belongs to Vishay's third-generation logic-level power MOSFET product line, engineered for high-current, surface-mount switching in space-constrained industrial and automotive power stages.

FAQ

What is the maximum continuous drain current for IRLR120TRRPBF at 100 °C case temperature?

The IRLR120TRRPBF supports 4.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard FR-4 PCB; actual current capability increases with enhanced copper area or heatsinking. The IRLR120TRRPBF maintains stable R_DS(on) up to 150 °C junction temperature.

Does IRLR120TRRPBF require a gate driver IC when used with a 3.3 V microcontroller?

No, the IRLR120TRRPBF does not require an external gate driver IC when driven by a 3.3 V microcontroller. Its logic-level gate threshold (1.0–2.0 V) and guaranteed R_DS(on) at V_GS = 4 V ensure full enhancement with 3.3 V GPIO outputs. However, for high-frequency switching (>200 kHz), a low-impedance gate driver improves rise/fall times and reduces switching loss in the IRLR120TRRPBF.

What is the body diode reverse recovery time (t_rr) of IRLR120TRRPBF, and why does it matter?

The IRLR120TRRPBF has a body diode reverse recovery time of 110–140 ns at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in synchronous rectification and bridge circuits - shorter t_rr reduces diode tail current and associated voltage spikes. The IRLR120TRRPBF's t_rr enables efficient operation in 100–500 kHz DC-DC converters without external snubbers.

Can IRLR120TRRPBF be used in avalanche mode for clamping in inductive load circuits?

Yes, the IRLR120TRRPBF is explicitly rated for repetitive avalanche operation, with I_AR = 7.7 A and E_AR = 4.2 mJ. This allows controlled use in unclamped inductive switching (e.g., solenoid drivers or relay coils) without external protection diodes. Operation must respect pulse width and duty cycle limits per Figure 11 to avoid exceeding T_J(max) = 150 °C. The IRLR120TRRPBF's ruggedized die design supports this mode reliably.

What is the thermal resistance from junction to ambient (R_thJA) for IRLR120TRRPBF on a standard PCB?

The IRLR120TRRPBF has a maximum junction-to-ambient thermal resistance of 50 °C/W when mounted on a 1" square FR-4 PCB (per Note "e" in datasheet). This value assumes 1 oz. copper, no additional heatsink, and natural convection. With optimized thermal pads and copper pours, R_thJA can improve to ~35–40 °C/W. For precise thermal design, always reference the IRLR120TRRPBF's transient impedance curve (Figure 11) and derate power accordingly.

IRLR120TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRLR120TRRPBF FAQ

1.How can I place an order for IRLR120TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR120TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR120TRRPBF reliable?

The price and inventory of IRLR120TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR120TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR120TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR120TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR120TRRPBF?

IRLR120TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR120TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR120TRRPBF?

For technical support, including IRLR120TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR120TRRPBF requirements.

6.How does Aetrix verify that IRLR120TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR120TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR120TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR120TRRPBF?

All IRLR120TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR120TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR120TRRPBF part is unused and in its original packaging.

Return procedure for IRLR120TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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