Infineon Technologies IRLR3105TRPBF

Overview

IRLR3105TRPBF from Infineon Technologies is an N-channel logic-level HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55V V_DSS, 25A continuous drain current at T_C = 25°C, and 0.037Ω R_DS(on) at V_GS = 10V. It features 175°C maximum junction temperature, fast switching (t_r = 57 ns, t_f = 37 ns), and 94 mJ tested single-pulse avalanche energy - deployed in DC-DC synchronous rectification and motor drive half-bridge stages.

For engineers reviewing the IRLR3105TRPBF datasheet, IRLR3105TRPBF pinout, IRLR3105TRPBF application, or IRLR3105TRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–3.0 V), low conduction loss at 12–24V rail systems, thermal resistance (R_θJC = 2.65°C/W), and body diode recovery performance (t_rr = 52–78 ns, Q_rr = 82–120 nC).

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability. Its gate threshold voltage range (1.0–3.0 V) ensures reliable turn-on with 3.3V/5V microcontroller outputs, and its 175°C rated junction supports high ambient industrial environments without derating penalties.

The device integrates a co-packaged body diode with characterized reverse recovery (t_rr, Q_rr) and dv/dt immunity (3.4 V/ns), enabling use in hard-switched topologies where freewheeling current commutation occurs. Thermal design is anchored by validated R_θJC = 2.65°C/W and linear derating factor of 0.38 W/°C above 25°C case temperature.

Key Specifications

Pinout & Package

IRLR3105TRPBF uses the surface-mount D-Pak (TO-252) package with gull-wing leads. The package provides low thermal resistance and is compatible with vapor-phase, infrared, and wave soldering processes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP30NF20 and IRLZ44N, IRLR3105TRPBF offers optimal balance of logic-level drive, verified avalanche ruggedness, and D-Pak thermal performance - making it preferred for space-constrained, high-reliability 24–48V industrial switching applications.

Availability

IRLR3105TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, LED drivers, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLR3105TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and automotive subsystems.

FAQ

Is IRLR3105TRPBF RoHS-compliant and lead-free?

Yes, IRLR3105TRPBF is RoHS-compliant and lead-free per EU Directive 2011/65/EU. The "PbF" suffix in the part number explicitly denotes lead-free packaging and termination. All plating and die attach materials meet JEDEC J-STD-609 Category 1 requirements, and the device carries the standard RoHS marking on its top-side laser etch.

What is the maximum safe operating frequency for IRLR3105TRPBF in a hard-switched buck converter?

Based on measured t_r = 57 ns and t_f = 37 ns, plus Q_g = 20 nC and typical gate driver output impedance (~10 Ω), the practical upper limit is ~500 kHz for continuous operation with <10% duty-cycle dead time. At 1 MHz, switching losses dominate and junction temperature exceeds 175°C unless aggressively cooled - confirmed by SOA curves in Figure 8 of the datasheet.

Can IRLR3105TRPBF be used in parallel configurations?

Yes, but with strict layout and gate drive matching. The positive R_DS(on) temperature coefficient (Figure 10) enables current sharing, yet mismatched gate loop inductance or trace resistance causes dynamic imbalance. Infineon recommends individual 10 Ω gate resistors, symmetrical PCB routing, and Kelvin source connections - validated in Application Note AN-1040 for paralleled D-Pak MOSFETs.

Does the body diode support continuous bidirectional current in H-bridge configurations?

No - the body diode is optimized for unidirectional freewheeling (source-to-drain), not reverse conduction. In H-bridge operation, reverse current flow through the body diode induces high V_SD (>1.3 V) and elevated power dissipation. For true bidirectional switching, external anti-parallel Schottky diodes or complementary N/P-channel pairs are required per leg.