Infineon Technologies IRLR3636TRLPBF

Overview

IRLR3636TRLPBF from Infineon Technologies is a logic-level N-channel HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 60 V V_DS, 5.4 mΩ R_DS(on) at 4.5 V V_GS, and 50 A continuous drain current (package-limited). It serves as a high-efficiency synchronous rectifier or hard-switched power switch in DC motor drives and SMPS secondary-side circuits.

For engineers reviewing the IRLR3636TRLPBF datasheet, IRLR3636TRLPBF pinout, IRLR3636TRLPBF application, or IRLR3636TRLPBF equivalent, key selection criteria include its low 4.5 V gate drive compatibility, 33 nC total gate charge, enhanced body diode dV/dt ruggedness, and SOA-validated avalanche energy of 700 mJ (single-pulse, T_J = 25°C).

Technical Context

This MOSFET employs planar silicon-gate technology with optimized channel geometry to achieve ultra-low R_DS(on) at logic-level gate voltages. Its dynamic parameters-including 15 nC Q_gd, 216 ns rise time, and 636 pF C_oss(TR)-are characterized for high-frequency switching up to 500 kHz in hard-switched topologies.

The integrated body diode exhibits 27 ns reverse recovery time (T_J = 25°C), 31 nC Q_rr, and 1109 A/µs dI/dt capability-enabling robust operation in synchronous rectification without external Schottky replacement in many 12–48 V systems.

Key Specifications

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-terminal configuration: Gate (G), Drain (D), Source (S).

Key Features

Applications

Availability

IRLR3636TRLPBF is available at Aetrix Electronics and suitable for DC motor drives, SMPS synchronous rectification, and uninterruptible power supply designs requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLR3636TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained, thermally demanding applications such as server PSUs and EV auxiliary systems.

FAQ

What is the maximum continuous drain current for IRLR3636TRLPBF at 100°C case temperature?

The maximum continuous drain current is 70 A at T_C = 100°C when limited by silicon, but the package limits it to 50 A under standard PCB mounting conditions. This 50 A rating assumes ≥1"² FR-4 copper area and proper thermal via placement beneath the drain pad per Application Note AN-994.

Does IRLR3636TRLPBF have avalanche capability, and how is it specified?

Yes, it is fully characterized for single-pulse avalanche with E_AS = 700 mJ at T_J = 25°C (L = 0.136 mH, I_AS = 50 A, V_GS = 10 V). Repetitive avalanche is not rated; operation must ensure junction temperature remains ≤175°C using transient thermal impedance data from Figure 13.

Can IRLR3636TRLPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage is 1.0–2.5 V, and R_DS(on) is fully specified at 4.5 V V_GS. At 3.3 V, typical R_DS(on) rises to ~9 mΩ (per Fig. 4), yielding acceptable performance for ≤20 A loads with appropriate thermal design and gate drive strength.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

Its body diode has 27 ns t_rr, 31 nC Q_rr, and 1.3 V V_SD at 50 A-comparable to 45 V Schottky diodes in 48 V systems. While Schottky offers lower forward drop, this MOSFET eliminates reverse recovery loss and enables zero-voltage switching in resonant topologies.