UMW IRLR7843TR

Overview

IRLR7843TR from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, designed as a synchronous rectifier or control FET in high-frequency DC-DC converters. It delivers 30 V V_DS, 3.3 mΩ R_DS(on) at V_GS = 4.5 V, 34 nC total gate charge, and 12 A continuous drain current at T_C = 25°C - enabling low conduction loss and fast switching in processor VRMs and telecom power supplies.

For engineers reviewing the IRLR7843TR datasheet, IRLR7843TR pinout, IRLR7843TR application, or IRLR7843TR equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V drive, fully characterized avalanche capability (1440 mJ E_AS), body diode reverse recovery performance (Q_rr = 36–54 nC), and thermal resistance (R_θJC = 1.05 °C/W) for thermally constrained PCB layouts.

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for high-frequency synchronous buck topologies. Its gate threshold voltage (V_GS(th) = 1.5–2.3 V) enables robust 4.5 V logic-level drive compatibility, while the low Q_gd/Q_gs1 ratio minimizes C_dv/dt-induced turn-on risk in high-dV/dt switching nodes.

The device integrates a monolithic body diode with t_rr = 39–59 ns and V_SD ≤ 1.0 V at I_S = 12 A, supporting efficient synchronous rectification without external Schottky diodes. Avalanche energy rating (E_AS = 1440 mJ) and linear SOA curves confirm ruggedness under unclamped inductive switching conditions.

Key Specifications

Pinout & Package

IRLR7843TR uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current PCB routing and low-inductance source connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR3714TRPBF, IRLR7843TR offers lower conduction loss at high current but requires more gate drive energy; versus SI7842DP-T1-GE3, it provides superior thermal dissipation in D-Pak but occupies larger PCB area - making it optimal for thermally demanding, medium-frequency synchronous rectifier roles.

Availability

IRLR7843TR is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial PLC power modules requiring stable component supply across extended production lifecycles.

Supply support for IRLR7843TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency power conversion - specifically engineered for synchronous rectification, motor control, and DC-DC regulation where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum junction temperature for reliable operation?

The IRLR7843TR has a specified operating junction temperature range of –55°C to +175°C. For continuous operation, thermal design must ensure T_J remains ≤175°C under worst-case ambient and power dissipation conditions. Derating begins above T_C = 100°C, with linear derating of 0.95 W/°C beyond that point.

Can this MOSFET be used with 3.3 V gate drive?

No - the gate threshold voltage (V_GS(th)) ranges from 1.5 V to 2.3 V, but full enhancement requires ≥4.5 V to achieve the rated 3.3 mΩ R_DS(on). At 3.3 V, R_DS(on) rises significantly (≥8 mΩ), increasing conduction loss and thermal stress; use only with confirmed 4.5 V or higher gate drive sources.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - the intrinsic body diode is fully characterized with t_rr = 39–59 ns and Q_rr = 36–54 nC at I_S = 12 A. These values support use in hard-switched synchronous buck converters, though soft-switching or ZVS techniques further reduce associated losses and EMI.

Does this part have lead-free and RoHS-compliant packaging?

Yes - the IRLR7843TR is manufactured in a lead-free, halogen-free, RoHS-compliant D-Pak package. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 rating and is qualified for reflow soldering per IPC/JEDEC J-STD-020 standards.