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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ14L

Name: IRLZ14L
Brand: Vishay Siliconix
SKU: IRLZ14L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ14L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRLZ14L.pdf

Description:: MOSFET N-CH 60V 10A TO262-3

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Product details

Overview

IRLZ14L from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 10 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 5 V. It delivers fast switching, 175 °C junction temperature capability, and integrated body diode with 93 ns reverse recovery time - optimized for DC-DC converters, motor drives, and high-efficiency power switches.

For engineers reviewing the IRLZ14L datasheet, IRLZ14L pinout, IRLZ14L application, or IRLZ14L equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low Q_g (8.4 nC), rugged unclamped avalanche rating (68 mJ), and surface-mount thermal performance (R_thJC = 3.5 °C/W).

Technical Context

This MOSFET employs Vishay's third-generation silicon process to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) and avalanche energy handling. Its gate charge profile (Q_gs = 3.5 nC, Q_gd = 6.0 nC) supports efficient hard-switching in synchronous buck topologies.

The device features a monolithic N-channel structure with integral body diode characterized for 10 A forward conduction and 100 A/μs di/dt-rated recovery. Thermal design leverages the D2PAK's low R_thJC and copper-tab construction for direct heatsink mounting without isolation hardware.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus systems with margin
R_DS(on) @ V_GS = 5 V	0.20 Ω - Enables <1.2 W conduction loss at 6 A DC load
I_D (continuous, T_C = 25 °C)	10 A - Supports medium-power switching with PCB-mounted heatsinking
Q_g (max)	8.4 nC - Low gate drive power requirement for 100–500 kHz PWM operation
E_AS	68 mJ - Withstands inductive turn-off transients without external snubbers
T_J range	–55 to +175 °C - Qualified for under-hood automotive and industrial ambient environments
C_iss	400 pF - Predictable Miller effect behavior in gate-drive loop stability analysis

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; thermal pad requires solder paste stencil aperture matching Vishay AN826 recommended footprint (0.420" × 0.355").

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-compatible input requiring ≤2.0 V threshold; driven directly by MCU GPIO or dedicated gate driver
D (Drain)	High-side switch output / power return path	Internally connected to exposed copper tab; must be soldered to large copper pour or heatsink for thermal management
S (Source)	Reference node / current return	Provides low-impedance return path for load current; ties to ground plane or low-side shunt resistor

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - eliminates need for level-shifting circuitry in 3.3 V/5 V control systems
Low R_DS(on) × Q_g figure of merit	1.68 Ω·nC - balances conduction and switching losses for high-frequency SMPS efficiency
Rugged avalanche capability	68 mJ single-pulse E_AS - enables reliable operation in inductive load switching without external clamping
Fast body diode recovery	t_rr = 93 ns (typ.) - reduces cross-conduction losses in synchronous rectification and half-bridge configurations
Surface-mount thermal performance	R_thJC = 3.5 °C/W - allows >30 W power dissipation with minimal heatsink when mounted per AN826 layout

Applications

Brushless DC Motor Control	Industrial DC-DC Converters
Use Scenario: Driving 3-phase BLDC inverters in HVAC blowers and power tools using 6–48 V battery or bus supplies. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; synchronized with complementary high-side FET via dead-time control. Use Value: 0.20 Ω R_DS(on) minimizes I²R heating during 10 A peak phase current; 175 °C T_J rating sustains operation during transient overloads.	Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 12 V → 3.3 V/5 V flyback or forward converters. IC Role / Device Role / Timing Role: Power switch in active clamp or resonant topology; controlled by PWM controller with adaptive gate timing. Use Value: 8.4 nC Q_g enables clean 300 kHz switching with <10 ns rise/fall times; low C_oss improves light-load efficiency.
Automotive LED Headlamp Drivers	UPS Battery Switching
Use Scenario: High-current PWM dimming and on/off control of multi-string LED arrays in 12 V/24 V vehicle systems. IC Role / Device Role / Timing Role: High-side or low-side current switch; duty-cycled at 1–20 kHz to regulate luminance without visible flicker. Use Value: 10 A continuous rating handles 8 A LED loads with 20% margin; –55 °C to +175 °C qualification meets AEC-Q101 ambient requirements.	Use Scenario: Solid-state transfer switch between main AC-DC supply and backup battery bank in line-interactive UPS units. IC Role / Device Role / Timing Role: Bidirectional power path controller; operated in linear mode during transition or as hard-switched pass element. Use Value: 60 V V_DS accommodates 48 V nominal battery stacks with surge margin; low R_DS(on) limits voltage drop during 15 A sustained discharge.

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 3-phase BLDC inverters in HVAC blowers and power tools using 6–48 V battery or bus supplies.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; synchronized with complementary high-side FET via dead-time control.

Use Value: 0.20 Ω R_DS(on) minimizes I²R heating during 10 A peak phase current; 175 °C T_J rating sustains operation during transient overloads.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 12 V → 3.3 V/5 V flyback or forward converters.

IC Role / Device Role / Timing Role: Power switch in active clamp or resonant topology; controlled by PWM controller with adaptive gate timing.

Use Value: 8.4 nC Q_g enables clean 300 kHz switching with <10 ns rise/fall times; low C_oss improves light-load efficiency.

Automotive LED Headlamp Drivers

UPS Battery Switching

Use Scenario: High-current PWM dimming and on/off control of multi-string LED arrays in 12 V/24 V vehicle systems.

IC Role / Device Role / Timing Role: High-side or low-side current switch; duty-cycled at 1–20 kHz to regulate luminance without visible flicker.

Use Value: 10 A continuous rating handles 8 A LED loads with 20% margin; –55 °C to +175 °C qualification meets AEC-Q101 ambient requirements.

Use Scenario: Solid-state transfer switch between main AC-DC supply and backup battery bank in line-interactive UPS units.

IC Role / Device Role / Timing Role: Bidirectional power path controller; operated in linear mode during transition or as hard-switched pass element.

Use Value: 60 V V_DS accommodates 48 V nominal battery stacks with surge margin; low R_DS(on) limits voltage drop during 15 A sustained discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 0.028 Ω @ V_GS = 5 V (lower), but V_DS = 55 V (lower); Q_g = 71 nC (higher)	Better for low-voltage, high-current DC loads; less suitable for 48 V bus systems due to reduced voltage margin	Select IRLZ44N only if system V_DD ≤ 40 V and gate drive can support higher Q_g without excessive loss
STP16NF06L	V_DS = 60 V (same), R_DS(on) = 0.12 Ω @ V_GS = 5 V (lower), Q_g = 18 nC (higher), T_J max = 175 °C (same)	Higher conduction efficiency but slower switching; requires stronger gate driver for same frequency	Prefer STP16NF06L where thermal budget is tight but switching frequency ≤ 100 kHz

Compared with IRLZ44N and STP16NF06L, the IRLZ14L offers balanced trade-offs: sufficient 60 V rating for 48 V systems, moderate 0.20 Ω R_DS(on) for thermal manageability, and low 8.4 nC Q_g enabling efficient 300+ kHz operation - making it optimal for space-constrained, medium-power switching where both voltage margin and gate drive simplicity matter.

Availability

IRLZ14L is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and automotive LED headlamp drivers requiring stable component supply across production lifecycles.

Supply support for IRLZ14L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ14L belongs to Vishay's logic-level power MOSFET product line, engineered for efficient, low-voltage gate drive in compact power conversion and motor control systems where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current rating for IRLZ14L at 100 °C case temperature?

The IRLZ14L supports 7.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world PCB heatsinking conditions and must be validated against actual board layout and airflow. The IRLZ14L maintains full functionality across its –55 °C to +175 °C junction temperature range.

Does IRLZ14L have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRLZ14L integrates a monolithic body diode with t_rr = 93 ns (typ.) and Q_rr = 340 nC (typ.) at T_J = 25 °C, I_F = 10 A, and di/dt = 100 A/μs. This fast recovery enables use in synchronous rectification and half-bridge topologies without external diodes. The IRLZ14L body diode is rated for 10 A continuous and 40 A pulsed forward current.

What is the gate threshold voltage range for IRLZ14L, and how does it support logic-level operation?

The IRLZ14L has a gate-source threshold voltage V_GS(th) of 1.0–2.0 V at I_D = 250 μA, confirming true logic-level compatibility. This allows full enhancement with standard 3.3 V or 5 V microcontroller outputs without gate boosting. The IRLZ14L achieves R_DS(on) = 0.20 Ω at V_GS = 5 V and ID = 6.0 A, validating robust conduction under typical logic-drive conditions.

Can IRLZ14L be used in avalanche-prone circuits, and what is its rated single-pulse energy?

Yes, the IRLZ14L is characterized for unclamped inductive switching with a rated single-pulse avalanche energy E_AS of 68 mJ at T_J = 25 °C. This specification permits reliable operation in relay driving, solenoid control, and other inductive load applications without external snubbers - provided pulse width and duty cycle remain within limits defined in Figure 11 of the datasheet. The IRLZ14L's avalanche ruggedness is verified per test condition b.

What thermal resistance values apply to IRLZ14L in standard PCB mounting, and how do they impact heatsinking?

The IRLZ14L exhibits R_thJC = 3.5 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount). The low R_thJC confirms efficient heat transfer from die to the exposed drain tab, enabling direct attachment to heatsinks. For 30 W dissipation, a 5 °C/W heatsink yields ~115 °C junction rise above ambient - well within the 175 °C limit. The IRLZ14L's thermal performance depends critically on solder coverage and copper area per Vishay AN826 guidelines.

IRLZ14L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.4 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3

IRLZ14L FAQ

1.How can I place an order for IRLZ14L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ14L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ14L reliable?

The price and inventory of IRLZ14L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ14L is usually 5 days.

3.What payment methods are accepted for IRLZ14L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ14L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ14L?

IRLZ14L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ14L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ14L?

For technical support, including IRLZ14L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ14L requirements.

6.How does Aetrix verify that IRLZ14L is sourced from the original manufacturer or authorized distributors?

All IRLZ14L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ14L meets industry standards.

7.What is the process for return or replacement of IRLZ14L?

All IRLZ14L units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ14L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ14L part is unused and in its original packaging.

Return procedure for IRLZ14L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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