Vishay Siliconix IRLZ24L

Overview

IRLZ24L from Vishay Siliconix is a through-hole N-channel logic-level power MOSFET optimized for 60 V, 17 A continuous drain current operation at TC = 25 °C, with RDS(on) = 0.10 Ω at VGS = 5 V and 175 °C maximum junction temperature - used in DC-DC converter high-side switches and motor drive half-bridges.

For engineers reviewing the IRLZ24L datasheet, IRLZ24L pinout, IRLZ24L application, or IRLZ24L equivalent, this part supports low-voltage gate drive (4–5 V), fast switching (td(on) = 11 ns, tr = 110 ns), and rugged unclamped inductive switching (EAS = 110 mJ) in industrial motor control and power supply designs.

Technical Context

The IRLZ24L implements a third-generation TrenchFET® structure enabling low on-resistance with logic-level gate compatibility. Its thermal design targets 175 °C operation using TO-262 (I2PAK) package with 2.5 °C/W junction-to-case resistance, supporting high-current PCB-mount applications where surface-mount alternatives are unsuitable.

It features dynamic dV/dt immunity (4.5 V/ns), integrated body diode with trr = 110–260 ns and Qrr = 0.49–1.5 μC, and avalanche-rated operation validated per unclamped inductive test conditions (IAS = 17 A, L = 444 μH).

Key Specifications

Pinout & Package

The IRLZ24L uses the I2PAK (TO-262) through-hole package - a 3-lead, single-ended, isolated-tab power package with 13.46 mm × 9.65 mm footprint and 14.10 mm height, designed for low-profile board mounting and high-power dissipation (60 W at TC = 25 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLZ24L, IRFZ24NPbF demands higher gate voltage for full enhancement and lacks guaranteed 4 V operation, while STP16NF06L offers near-identical electrical specs in TO-220 but with reduced avalanche robustness and higher thermal resistance - making IRLZ24L preferable for thermally demanding, logic-level-driven applications.

Availability

IRLZ24L is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, AC fan speed regulation, and hot-swap power distribution requiring stable component supply across long-lifecycle programs.

Supply support for IRLZ24L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRLZ24L belongs to Vishay's logic-level TrenchFET® power MOSFET family, engineered for industrial and automotive auxiliary power systems where low-voltage gate drive, high-temperature operation, and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for the IRLZ24L at 100 °C case temperature?

The IRLZ24L supports 12 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package and ensures safe operation within its 175 °C maximum junction temperature limit. The IRLZ24L maintains stable RDS(on) performance across this range due to its positive VDS temperature coefficient.

Does the IRLZ24L have a built-in body diode, and what are its key parameters?

Yes, the IRLZ24L integrates a source-drain body diode rated for 17 A continuous forward current and 68 A pulsed current. Key parameters include VSD = 1.5 V at TJ = 25 °C and IS = 17 A, trr = 110–260 ns, and Qrr = 0.49–1.5 μC. These values are measured under standardized conditions (IF = 17 A, dI/dt = 100 A/μs) and define reverse recovery behavior in freewheeling and synchronous rectification applications.

Can the IRLZ24L be driven directly by a 3.3 V microcontroller GPIO pin?

No - while the IRLZ24L is logic-level, its RDS(on) is only guaranteed at VGS = 4 V and 5 V per datasheet specifications. At 3.3 V, the device operates in partial enhancement, resulting in significantly higher RDS(on) (>0.2 Ω) and excessive conduction loss. For reliable 3.3 V MCU drive, a gate driver with level-shifting or voltage boosting is required to ensure VGS ≥ 4 V.

What is the thermal resistance from junction to ambient for the IRLZ24L when mounted on a 1" square FR-4 PCB?

When mounted on a 1" square FR-4 PCB, the IRLZ24L has a maximum junction-to-ambient thermal resistance (RthJA) of 40 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions and enables estimation of steady-state junction temperature: TJ = TA + (PD × RthJA). For example, at 3.7 W dissipation and 25 °C ambient, TJ ≈ 165 °C - within the 175 °C limit.

Is the IRLZ24L RoHS-compliant and halogen-free?

Yes, the IRLZ24L is compliant with the RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Vishay documents this compliance in the Features section of the datasheet (Document Number 90416, Rev. C). The part carries the "-GE3" suffix in lead-free/halogen-free versions (e.g., SiHLZ24L-GE3), while legacy Pb-containing variants (e.g., IRLZ24LPbF) are explicitly marked non-RoHS.