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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ34PBF

Name: IRLZ34PBF
Brand: Vishay Siliconix
SKU: IRLZ34PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLZ34PBF.pdf

Description:: MOSFET N-CH 60V 30A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLZ34PBF from Vishay Siliconix is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 0.050 Ω R_DS(on) at V_GS = 5 V. It operates up to 175 °C junction temperature and supports fast switching in DC motor control, power supplies, and solid-state relay replacement.

For engineers reviewing the IRLZ34PBF datasheet, IRLZ34PBF pinout, IRLZ34PBF application, or IRLZ34PBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 128 mJ), and thermal performance in TO-220AB with R_thJC = 1.7 °C/W.

Technical Context

This discrete MOSFET uses planar silicon technology optimized for rugged unclamped inductive switching, with specified dV/dt immunity (4.5 V/ns) and body diode recovery (t_rr = 120–180 ns, Q_rr = 0.70–1.3 μC). Its gate charge profile (Q_g = 35 nC, Q_gd = 25 nC) enables efficient drive with standard logic-level controllers.

The device features a single N-channel enhancement-mode structure with integral body diode, characterized for linear derating (0.59 W/°C above 25 °C) and defined safe operating area (SOA) up to 100 μs pulse width. Thermal resistance from junction-to-case is fixed at 1.7 °C/W, enabling predictable heatsink sizing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche conduction in power-switching applications
R_DS(on) @ V_GS = 5 V	0.050 Ω - On-resistance determining conduction loss at full load (e.g., 45 W loss at 30 A)
I_D Continuous @ T_C = 25 °C	30 A - Max steady-state current with adequate heatsinking at case temperature ≤25 °C
Q_g	35 nC - Total gate charge defining driver strength requirement for 100 kHz switching
E_AS	128 mJ - Single-pulse avalanche energy tolerance during inductive turn-off transients
T_J Operating Range	–55 to +175 °C - Extended thermal capability for industrial and automotive under-hood environments
dV/dt Rating	4.5 V/ns - Immunity to false triggering during high-slew-rate voltage transients

Pinout & Package

IRLZ34PBF is housed in a through-hole TO-220AB package with standardized 3-pin layout and metal tab (Drain) for direct heatsink mounting. The package has 1.7 °C/W junction-to-case thermal resistance and requires 1.1 N·m mounting torque on M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-compatible input requiring ≤2.0 V threshold; driven by microcontroller GPIO or gate driver IC
D (Drain)	High-side current path terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless circuit ground reference permits
S (Source)	Return path and reference node	Common return for gate drive and load current; defines local ground for gate-source voltage reference

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting
Ruggedized avalanche capability	E_AS = 128 mJ allows reliable operation in inductive load switching without external snubbers
Fast body diode recovery	t_rr = 120–180 ns and Q_rr = 0.70–1.3 μC reduce switching losses in synchronous rectification and H-bridge freewheeling
Thermal robustness	175 °C max junction temperature supports operation in sealed enclosures or high-ambient industrial settings
Low gate charge asymmetry	Q_gd/Q_g = 71 % ensures controllable Miller plateau timing for reduced shoot-through risk in bridge topologies

Applications

DC Motor Control	Switched-Mode Power Supply
Use Scenario: Bidirectional 24 V brushed DC motor drive in automated gate operator with PWM frequency of 20 kHz. IC Role / Device Role / Timing Role: High-side N-channel switch controlling motor phase current; body diode provides freewheeling path during PWM off-time. Use Value: 0.050 Ω R_DS(on) limits conduction loss to <1.5 W at 15 A, while 128 mJ E_AS withstands inductive kickback during direction reversal.	Use Scenario: Primary-side switching transistor in 120 W offline flyback converter with universal AC input. IC Role / Device Role / Timing Role: Main power switch turning on/off transformer primary winding; synchronized with controller IC via gate driver. Use Value: Logic-level gate enables direct drive from UC384x-series controller; 4.5 V/ns dV/dt rating prevents spurious turn-on during high dv/dt transitions.
Solid-State Relay Replacement	LED Constant-Current Driver
Use Scenario: Industrial PLC output module replacing electromechanical relay for 48 V DC load switching with >1 million cycles. IC Role / Device Role / Timing Role: Low-loss, zero-contact solid-state switch isolating control logic from 30 A resistive load. Use Value: 30 A continuous rating and 175 °C T_J ensure long-term reliability under sustained load; TO-220AB mechanical robustness supports vibration-prone factory floor use.	Use Scenario: Dimmable constant-current LED driver for architectural lighting with analog 0–10 V dimming interface. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 25 A. Use Value: Low R_DS(on) minimizes heat generation in linear mode; body diode reverse recovery parameters support clean PWM edge integrity at 1–5 kHz dimming frequencies.

DC Motor Control

Switched-Mode Power Supply

Use Scenario: Bidirectional 24 V brushed DC motor drive in automated gate operator with PWM frequency of 20 kHz.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling motor phase current; body diode provides freewheeling path during PWM off-time.

Use Value: 0.050 Ω R_DS(on) limits conduction loss to <1.5 W at 15 A, while 128 mJ E_AS withstands inductive kickback during direction reversal.

Use Scenario: Primary-side switching transistor in 120 W offline flyback converter with universal AC input.

IC Role / Device Role / Timing Role: Main power switch turning on/off transformer primary winding; synchronized with controller IC via gate driver.

Use Value: Logic-level gate enables direct drive from UC384x-series controller; 4.5 V/ns dV/dt rating prevents spurious turn-on during high dv/dt transitions.

Solid-State Relay Replacement

LED Constant-Current Driver

Use Scenario: Industrial PLC output module replacing electromechanical relay for 48 V DC load switching with >1 million cycles.

IC Role / Device Role / Timing Role: Low-loss, zero-contact solid-state switch isolating control logic from 30 A resistive load.

Use Value: 30 A continuous rating and 175 °C T_J ensure long-term reliability under sustained load; TO-220AB mechanical robustness supports vibration-prone factory floor use.

Use Scenario: Dimmable constant-current LED driver for architectural lighting with analog 0–10 V dimming interface.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 25 A.

Use Value: Low R_DS(on) minimizes heat generation in linear mode; body diode reverse recovery parameters support clean PWM edge integrity at 1–5 kHz dimming frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ V_GS = 10 V but V_GS(th) = 2.0–4.0 V; not logic-level compatible at 3.3 V	Requires 10 V gate drive; unsuitable for 3.3 V MCU direct drive; higher peak efficiency only with 10 V supply	Select when gate drive voltage ≥10 V is available and lowest conduction loss is critical
STP55NF06L	R_DS(on) = 0.018 Ω @ V_GS = 5 V; Q_g = 65 nC; slightly larger TO-220FP package footprint	Higher gate charge increases driver complexity; lower R_DS(on) reduces conduction loss by ~65 % at 20 A	Select when 5 V logic drive is confirmed and thermal margin allows higher Q_g-related switching loss

Compared with IRLZ34PBF, IRFZ44NPBF demands higher gate voltage for full enhancement and offers lower R_DS(on) only at 10 V, while STP55NF06L delivers superior 5 V R_DS(on) at the cost of increased gate drive demand and larger package height-making IRLZ34PBF optimal for balanced 3.3/5 V logic-driven designs with constrained board space and thermal budget.

Availability

IRLZ34PBF is available at Aetrix Electronics and suitable for DC motor control, switched-mode power supplies, and solid-state relay replacement requiring stable component supply, RoHS-compliant sourcing, and long-lifecycle industrial availability.

Supply support for IRLZ34PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete semiconductors, passive components, and sensors, with emphasis on high-reliability power devices and precision analog solutions.

The IRLZ34PBF belongs to Vishay's logic-level Power MOSFET family designed for industrial motor drives, power conversion, and solid-state switching where low-voltage gate compatibility, rugged avalanche performance, and thermal resilience are essential.

FAQ

What is the maximum continuous drain current rating for IRLZ34PBF at 100 °C case temperature?

The IRLZ34PBF supports 21 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220AB package and must be applied when heatsink design or ambient conditions prevent maintaining T_C ≤ 25 °C. The linear derating factor is 0.59 W/°C beyond 25 °C.

Does IRLZ34PBF have a built-in body diode, and what are its key recovery characteristics?

Yes, IRLZ34PBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Its body diode exhibits t_rr = 120–180 ns and Q_rr = 0.70–1.3 μC at T_J = 25 °C, I_F = 30 A, and dI/dt = 100 A/μs. These values enable reliable freewheeling in H-bridge and flyback topologies without external diode supplementation.

Can IRLZ34PBF be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, IRLZ34PBF is specifically designed as a logic-level MOSFET with V_GS(th) = 1.0–2.0 V and guaranteed R_DS(on) = 0.070 Ω at V_GS = 4.0 V. A 3.3 V GPIO can fully enhance the device, though gate resistor selection (e.g., 10–47 Ω) should balance switching speed against ringing and EMI.

What is the avalanche energy rating of IRLZ34PBF, and under what test conditions is it specified?

The IRLZ34PBF has a single-pulse avalanche energy rating E_AS = 128 mJ, measured under conditions of V_DD = 25 V, starting T_J = 25 °C, L = 285 μH, R_g = 25 Ω, and I_AS = 30 A. This rating validates its ability to absorb inductive energy during unclamped inductive switching events without failure.

Is IRLZ34PBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRLZ34PBF is RoHS-compliant. The 'PbF' suffix denotes lead (Pb)-free terminations per Directive 2002/95/EC. Vishay confirms this variant meets exemption-free RoHS requirements, with SnPb alternatives (e.g., IRLZ34) available for legacy applications requiring leaded finishes.

IRLZ34PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 18A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLZ34PBF FAQ

1.How can I place an order for IRLZ34PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34PBF reliable?

The price and inventory of IRLZ34PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34PBF is usually 5 days.

3.What payment methods are accepted for IRLZ34PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34PBF?

IRLZ34PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34PBF?

For technical support, including IRLZ34PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34PBF requirements.

6.How does Aetrix verify that IRLZ34PBF is sourced from the original manufacturer or authorized distributors?

All IRLZ34PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34PBF meets industry standards.

7.What is the process for return or replacement of IRLZ34PBF?

All IRLZ34PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34PBF part is unused and in its original packaging.

Return procedure for IRLZ34PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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