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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ34S

Name: IRLZ34S
Brand: Vishay Siliconix
SKU: IRLZ34S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ34S.pdf

Description:: MOSFET N-CH 60V 30A D2PAK

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Product details

Overview

IRLZ34S from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 0.05 Ω R_DS(on) at V_GS = 5 V. It features fully avalanche-rated operation, 175 °C maximum junction temperature, and fast switching with 35 nC total gate charge - used in DC-DC converters, motor drives, and high-efficiency power switches.

For engineers reviewing the IRLZ34S datasheet, IRLZ34S pinout, IRLZ34S application, or IRLZ34S equivalent, this page delivers verified electrical parameters, thermal performance data, PCB-mount power dissipation limits (3.7 W), body diode recovery characteristics (t_rr = 120–180 ns), and validated alternative parts for industrial power control designs.

Technical Context

The IRLZ34S employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability (E_AS = 128 mJ). Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

Thermal design is enabled by low R_thJC = 1.7 °C/W (junction-to-case) and defined PCB-mount derating (R_thJA = 40 °C/W). The integrated body diode supports synchronous rectification and freewheeling in buck and H-bridge topologies with controlled reverse recovery (Q_rr = 700–1300 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V bus systems with margin for transients
R_DS(on) @ V_GS = 5 V	0.05 Ω - enables <1 W conduction loss at 18 A DC load
I_D (continuous)	30 A @ T_C = 25 °C - requires heatsinking above ~65 °C case temp
Q_g (total)	35 nC - determines gate driver strength requirement (~1 A peak for 35 ns rise)
E_AS	128 mJ - withstands unclamped inductive energy without failure
t_rr	120–180 ns - defines minimum dead-time in bridge configurations
T_J max	+175 °C - allows operation in sealed enclosures or high ambient environments

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions per JEDEC outline: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H); thermal pad occupies full bottom surface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Logic-level compatible; accepts 0–5 V drive; 100 nA leakage at ±10 V
D (Drain)	High-side power output	Connected to exposed copper thermal pad; carries full load current and heat
S (Source)	Power return / reference	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) ≤ 0.07 Ω), enabling direct MCU interface
Surface-mount D2PAK	Delivers 88 W power dissipation with heatsink or 3.7 W on 1" FR-4 PCB - highest power density among SMT packages
Fully avalanche rated	Guaranteed single-pulse E_AS = 128 mJ eliminates need for external snubbers in inductive loads
Fast body diode	t_rr = 120–180 ns and Q_rr = 700–1300 nC reduce switching losses in synchronous rectification
High-temperature operation	Rated from –55 °C to +175 °C junction; R_DS(on) increases only 0.07 V/°C over temperature

Applications

Brushless DC Motor Control	Industrial DC-DC Converters
Use Scenario: Driving 3-phase BLDC inverters in HVAC blowers and pump controllers with 24–48 V supply. IC Role / Device Role / Timing Role: Low-side switch in 6-MOSFET half-bridge configuration; commutated at 10–20 kHz. Use Value: 0.05 Ω R_DS(on) minimizes conduction loss; fast t_rr enables tight dead-time control to prevent shoot-through.	Use Scenario: High-current synchronous rectifier in isolated 48 V → 12 V telecom DC-DC modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency. Use Value: Body diode forward drop of 1.6 V at 30 A reduces rectifier loss vs. 0.5 V Schottky at same current density.
Uninterruptible Power Supplies	Automotive Body Control Modules
Use Scenario: Battery back-up switching and inverter output stage in 2 kVA UPS systems. IC Role / Device Role / Timing Role: High-current transfer switch and PWM output device handling 30 A peak loads. Use Value: 110 A pulsed drain rating and 128 mJ avalanche energy tolerate battery surge and load dump events.	Use Scenario: Load switching for headlights, cooling fans, and solenoid valves in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Single N-channel high-side or low-side switch controlled by automotive MCU GPIO. Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V MCU outputs; –55 to +175 °C rating meets AEC-Q101 ambient requirements.

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 3-phase BLDC inverters in HVAC blowers and pump controllers with 24–48 V supply.

IC Role / Device Role / Timing Role: Low-side switch in 6-MOSFET half-bridge configuration; commutated at 10–20 kHz.

Use Value: 0.05 Ω R_DS(on) minimizes conduction loss; fast t_rr enables tight dead-time control to prevent shoot-through.

Use Scenario: High-current synchronous rectifier in isolated 48 V → 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency.

Use Value: Body diode forward drop of 1.6 V at 30 A reduces rectifier loss vs. 0.5 V Schottky at same current density.

Uninterruptible Power Supplies

Automotive Body Control Modules

Use Scenario: Battery back-up switching and inverter output stage in 2 kVA UPS systems.

IC Role / Device Role / Timing Role: High-current transfer switch and PWM output device handling 30 A peak loads.

Use Value: 110 A pulsed drain rating and 128 mJ avalanche energy tolerate battery surge and load dump events.

Use Scenario: Load switching for headlights, cooling fans, and solenoid valves in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: Single N-channel high-side or low-side switch controlled by automotive MCU GPIO.

Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V MCU outputs; –55 to +175 °C rating meets AEC-Q101 ambient requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A, R_DS(on) = 0.055 Ω @ 10 V - requires 10 V gate drive	Higher voltage rating suits 100–150 V systems; not logic-level - needs gate driver IC	Select when >60 V blocking is required and gate drive voltage ≥10 V is available
IRFZ44NPBF	55 V V_DS, 49 A, R_DS(on) = 0.028 Ω @ 10 V - TO-220 package, non-logic-level	Lower R_DS(on) but higher gate threshold (2–4 V); through-hole mounting only	Choose for cost-sensitive through-hole designs where 5 V gate drive is insufficient

Compared with STP30NF20 and IRFZ44NPBF, the IRLZ34S uniquely combines 60 V rating, logic-level compatibility, D2PAK thermal performance, and avalanche ruggedness - making it optimal for space-constrained, MCU-driven 48 V power stages requiring no external gate driver.

Availability

IRLZ34S is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for IRLZ34S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ34S belongs to Vishay's logic-level power MOSFET product line, engineered for efficient, compact, and robust switching in 24–48 V embedded power systems where gate drive simplicity and thermal performance are critical.

FAQ

What is the maximum continuous drain current for the IRLZ34S at 100 °C case temperature?

The IRLZ34S supports 21 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation. Designers must ensure adequate heatsinking or airflow to maintain case temperature below 100 °C when operating near this limit. The IRLZ34S datasheet specifies linear derating beyond 25 °C at 0.59 W/°C.

Does the IRLZ34S have an integrated body diode, and what are its key parameters?

Yes, the IRLZ34S includes an integral reverse p–n junction body diode. Key parameters include: continuous source-drain current I_S = 30 A, pulsed diode current I_SM = 110 A, forward voltage V_SD = 1.6 V at 30 A and 25 °C, reverse recovery time t_rr = 120–180 ns, and reverse recovery charge Q_rr = 700–1300 nC. These values are measured under specified test conditions and directly impact efficiency in freewheeling and synchronous rectification applications.

Is the IRLZ34S RoHS-compliant, and what does the 'PbF' suffix indicate?

The IRLZ34SPbF variant is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The 'PbF' suffix explicitly denotes lead-free terminations. Vishay documents compliance status per material categorization standard 99912, and the IRLZ34S is classified as RoHS-compliant. Non-PbF versions (e.g., SiHLZ34S-GE3) may contain lead and are not RoHS-compliant.

What is the gate charge profile of the IRLZ34S, and how does it affect driver selection?

The IRLZ34S has Q_g = 35 nC (max), Q_gs = 7.1 nC, and Q_gd = 25 nC at V_GS = 5 V. This distribution indicates dominant Miller charge, requiring drivers capable of delivering ≥1 A peak current to achieve sub-50 ns switching transitions. The IRLZ34S datasheet recommends R_g = 6 Ω for characterization; lower resistance improves speed but increases EMI risk. Driver selection must account for these values to avoid excessive switching loss or oscillation.

Can the IRLZ34S be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRLZ34S is fully avalanche rated with a guaranteed single-pulse avalanche energy E_AS = 128 mJ under specified test conditions (V_DD = 25 V, I_AS = 30 A, R_g = 25 Ω). This rating applies to unclamped inductive switching events and allows safe operation without external snubbers in relay driving, solenoid control, and motor phase commutation. Repetitive avalanche is not rated and must be avoided in continuous operation.

IRLZ34S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 18A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRLZ34S FAQ

1.How can I place an order for IRLZ34S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34S reliable?

The price and inventory of IRLZ34S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34S is usually 5 days.

3.What payment methods are accepted for IRLZ34S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34S?

IRLZ34S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34S?

For technical support, including IRLZ34S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34S requirements.

6.How does Aetrix verify that IRLZ34S is sourced from the original manufacturer or authorized distributors?

All IRLZ34S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34S meets industry standards.

7.What is the process for return or replacement of IRLZ34S?

All IRLZ34S units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34S part is unused and in its original packaging.

Return procedure for IRLZ34S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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