Vishay Siliconix IRLZ34STRL

Overview

IRLZ34STRL from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 0.05 Ω R_DS(on) at V_GS = 5 V. It features fully avalanche-rated ruggedness, 175 °C maximum junction temperature, and fast switching with 35 nC total gate charge - optimized for high-efficiency DC-DC converters, motor drives, and industrial power switching.

For engineers reviewing the IRLZ34STRL datasheet, IRLZ34STRL pinout, IRLZ34STRL application, or IRLZ34STRL equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low on-resistance at 5 V gate bias, surface-mount D2PAK thermal performance (R_thJC = 1.7 °C/W), and unclamped inductive switching capability (E_AS = 128 mJ).

Technical Context

This MOSFET employs Vishay's third-generation silicon process to achieve ultra-low specific on-resistance while maintaining robust safe operating area (SOA) and fast body diode recovery (t_rr = 120–180 ns). Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers without level-shifting circuitry.

The device integrates a co-packaged, optimized body diode with Q_rr = 700–1300 nC and V_SD = 1.6 V at 30 A, enabling efficient synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design leverages the D2PAK's low R_thJC and high PCB-mount power dissipation (3.7 W at T_A = 25 °C).

Key Specifications

Pinout & Package

D2PAK (TO-263) package: surface-mount, single-ended power package with exposed drain pad for thermal and electrical connection. Dimensions per JEDEC TO-263AB outline (9.65 × 10.67 mm body, 14.61–15.88 mm height); thermal pad requires solder paste stencil design per AN826 recommended pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLZ44ZTRLPBF and STP60NF06L, the IRLZ34STRL offers optimal balance of low gate charge (35 nC), moderate on-resistance (0.05 Ω), and D2PAK thermal performance - making it ideal for high-density, medium-frequency power stages where gate drive capability and board area are constrained.

Availability

IRLZ34STRL is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and solid-state relay modules requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for IRLZ34STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ34STRL belongs to Vishay's logic-level power MOSFET product line, engineered for efficient, gate-driver-free switching in 3.3 V/5 V-controlled power systems including motor drives, LED lighting, and POL converters.

FAQ

What is the maximum continuous drain current for IRLZ34STRL at 100 °C case temperature?

The IRLZ34STRL supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual PCB copper area, airflow, and ambient conditions. The IRLZ34STRL maintains full functionality across its -55 °C to +175 °C junction temperature range.

Does IRLZ34STRL require a gate driver when used with a 3.3 V microcontroller?

No - the IRLZ34STRL has a gate threshold voltage range of 1.0–2.0 V and is explicitly designed as a logic-level MOSFET. It achieves full enhancement and low R_DS(on) at V_GS = 5 V, and remains functional down to 3.3 V gate drive, though R_DS(on) increases to ~0.07 Ω at V_GS = 4 V. For robust 3.3 V operation, verify load current stays within the 0.07 Ω conduction loss envelope. The IRLZ34STRL does not require external gate drivers in most MCU-based applications.

What is the avalanche energy rating of IRLZ34STRL and how is it tested?

The IRLZ34STRL is fully avalanche rated with a single-pulse unclamped inductive energy (E_AS) of 128 mJ, tested per Figure 12 in the datasheet: V_DD = 25 V, starting T_J = 25 °C, L = 285 μH, R_g = 25 Ω, I_AS = 30 A. This rating confirms ruggedness against inductive switching stress in motor and relay applications. The IRLZ34STRL is not rated for repetitive avalanche; operation must remain within SOA limits defined in Figure 8.

How does the body diode performance of IRLZ34STRL compare to standard rectifiers?

The IRLZ34STRL's integrated body diode has t_rr = 120–180 ns and Q_rr = 700–1300 nC at T_J = 25 °C, IS = 30 A, di/dt = 100 A/μs - significantly faster than general-purpose rectifiers (typically >1 μs t_rr). Its V_SD = 1.6 V at 30 A is higher than Schottky diodes but enables synchronous rectification without external components. In buck converter designs, this allows the IRLZ34STRL to serve dual roles: main switch and freewheeling diode, reducing BOM count and footprint.

Is IRLZ34STRL RoHS-compliant and what is its lead finish?

Yes - the IRLZ34STRL is RoHS-compliant and halogen-free, with lead (Pb)-free terminations. Per the Ordering Information section, it corresponds to the "Lead (Pb)-free and halogen-free" variant (SiHLZ34S-GE3), confirming compliance with EU Directive 2011/65/EU and JEDEC JS709. The device uses matte tin plating over copper leads, qualified for standard reflow profiles including peak temperatures up to 300 °C for 10 seconds. The IRLZ34STRL meets Vishay's material categorization standards per document 99912.