Infineon Technologies ISA150233C03LMDSXTMA

Overview

ISA150233C03LMDSXTMA from Infineon is a dual-channel complementary MOSFET pair (N- and P-channel) in a single PG-DSO-8 package, rated for 30 V drain-source voltage, with R_DS(on) of 15 mΩ (N-ch) and 23.3 mΩ (P-ch) at V_GS = ±10 V, supporting 10.2 A and −8.8 A continuous drain currents respectively-used in half-bridge DC-DC converters and motor drive H-bridges.

For engineers reviewing the ISA150233C03LMDSXTMA datasheet, ISA150233C03LMDSXTMA pinout, ISA150233C03LMDSXTMA application, or ISA150233C03LMDSXTMA equivalent, key selection criteria include verified dual-channel thermal coupling, asymmetric conduction capability, avalanche energy rating (28 mJ), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This device integrates matched N- and P-channel OptiMOS™ 3 trench-MOSFETs on one die substrate, enabling tightly coupled switching with shared thermal path. Its gate threshold voltages are symmetrically specified (±1.1 V to ±2.7 V), and both channels undergo 100% unclamped inductive switching (UIS) testing.

Dynamic parameters reflect optimized trade-offs: n-channel shows C_iss = 1300 pF and Q_g = 10.1 nC (to 10 V), while p-channel exhibits higher capacitance (C_iss = 2300 pF) and gate charge (Q_g = 32 nC), necessitating asymmetric gate driver design for balanced turn-on/turn-off timing.

Key Specifications

Pinout & Package

PG-DSO-8 package with thermally enhanced exposed drain pads (Drain 1 and Drain 2) on pins 4/8 and 6/7 respectively; dual gate inputs isolated for independent control; internal body diodes integrated per channel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Compared with IPB80P04P4L‑04 and SI7850DP-T1-GE3, ISA150233C03LMDSXTMA uniquely delivers matched N+P conduction, shared thermal path, and avalanche-rated symmetry-enabling compact half-bridge designs where gate drive simplicity and failure-mode predictability are prioritized over individual channel optimization.

Availability

ISA150233C03LMDSXTMA is available at Aetrix Electronics and suitable for brushless DC motor drivers, USB-C power delivery controllers, industrial PLC output modules, and automotive body control units requiring stable component supply across extended temperature and high-reliability cycles.

Supply support for ISA150233C03LMDSXTMA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™ 3 family-engineered for high-efficiency, low-voltage power conversion in space-constrained industrial and automotive applications where thermal coupling and ruggedness are critical.

FAQ

What is the maximum allowable gate-source voltage for both channels?

The absolute maximum gate-source voltage is ±20 V for both N- and P-channel transistors. Operation beyond ±15 V is not recommended due to accelerated gate oxide stress; typical drive uses +10 V for N-ch and −10 V for P-ch to ensure R_DS(on) spec compliance and long-term reliability under thermal cycling.

Can Pin 5 be left unconnected or must it be grounded?

Pin 5 is a mechanical thermal pad tie with no internal electrical connection. It may be left floating, but best practice is to connect it to the PCB's main ground plane via multiple thermal vias to improve heat dissipation-especially when operating near 2.5 W total power dissipation. No current-carrying function is assigned to this terminal.

Is the internal body diode rated for continuous conduction in synchronous rectification?

Yes-the integrated body diodes are fully characterized: n-channel diode supports 3.2 A continuous forward current at T_C = 25 °C (V_SD = 0.87 V typ), and p-channel diode handles −3.3 A (V_SD = −0.89 V typ). Both exhibit fast t_rr (15 ns and 22 ns), making them suitable for synchronous rectification in DC-DC converters up to 500 kHz, provided peak di/dt remains within datasheet limits.

How does the thermal resistance differ between the two channels under simultaneous operation?

Both channels share the same R_thJC = 50 °C/W (junction-to-solder point), and R_thJA = 90 °C/W (with 6 cm² copper) applies to the entire package. Under simultaneous conduction, junction temperatures rise additively-e.g., 1.55 W (N-ch) + 2.2 W (P-ch) = 3.75 W total yields ~338 °C/W × 3.75 W ≈ 127 °C rise above ambient-requiring careful derating per Figure 2 and Figure 17 in the datasheet.