My Inquiry
My Account
Infineon Technologies ISA170170N04LMDSXTMA1
- Part No.:
- ISA170170N04LMDSXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ISA170170N04LMDSXTMA1.pdf
- Description:
- ISA170170N04LMDSXTMA1
- Quantity:
- Payment:
- Shipping:
Inventory:500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISA170170N04LMDSXTMA1 from Infineon is a dual N-channel logic-level OptiMOS™ 3 power MOSFET in PG-DSO-8 package, rated for 40 V drain-source voltage, 17 mΩ max RDS(on) at VGS = 10 V, and 9.6 A continuous drain current. It integrates two matched channels for synchronous rectification or half-bridge drive in compact DC-DC converters.
For engineers reviewing the ISA170170N04LMDSXTMA1 datasheet, ISA170170N04LMDSXTMA1 pinout, ISA170170N04LMDSXTMA1 application, or ISA170170N04LMDSXTMA1 equivalent, key selection criteria include dual-channel matching, low gate charge (Qg = 6.0 nC typ), avalanche ruggedness, thermal resistance (RthJA = 90 °C/W), and logic-level gate drive compatibility with 4.5 V microcontrollers.
Technical Context
This dual N-channel MOSFET implements a monolithic die with two electrically isolated but thermally coupled channels in a single PG-DSO-8 package. Each channel supports independent gate control (Pin 1/Gate 1, Pin 3/Gate 2) and shares common source terminals (Pin 2/Source 1, Pin 5/Source 2), enabling high-efficiency synchronous buck topologies without external cross-conduction risk.
Its OptiMOS™ 3 process delivers low RDS(on) × Qg figure-of-merit (≈102 mΩ·nC), fast switching (tr = 5.0 ns, tf = 4.0 ns), and robust body diode recovery (trr = 13 ns, Qrr = 4.3 nC), making it suitable for high-frequency (>500 kHz) point-of-load regulators where conduction and switching losses must be jointly minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V and 24 V input systems with margin against transients |
| RDS(on) max | 17 mΩ @ VGS = 10 V - Enables ≤1.5 W conduction loss at 9.6 A in each channel |
| ID cont | 9.6 A @ TC = 25 °C - Sustains full load in space-constrained 25 mm² PCB footprints |
| Qg | 6.0 nC typ - Reduces gate driver power demand and enables 1 MHz+ switching with low VGS swing |
| EAS | 36 mJ - Withstands single-pulse inductive energy without failure in motor or solenoid drive |
| RthJA | 90 °C/W - Achieves <100 °C junction rise on standard 40 mm × 40 mm FR4 board with 6 cm² copper |
| trr | 13 ns - Minimizes reverse recovery loss and EMI during hard-switched freewheeling |
Pinout & Package
Package: PG-DSO-8 (lead-free, RoHS-compliant, halogen-free), 5.0 mm × 6.0 mm footprint, exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate 1 | Independent control input for Channel 1; logic-level compatible (VGS(th) = 1.1–2.7 V) |
| Pin 2 | Source 1 | Return path for Channel 1; internally connected to substrate ground plane |
| Pin 3 | Gate 2 | Independent control input for Channel 2; electrically isolated from Gate 1 |
| Pin 4 | Drain 1 | Power output node for Channel 1; tied to exposed thermal pad |
| Pin 5 | Source 2 | Return path for Channel 2; separate terminal prevents shoot-through coupling |
| Pin 6 | Drain 2 | Power output node for Channel 2; tied to same exposed thermal pad as Drain 1 |
| Pin 7 | Drain 2 | Redundant drain connection for Channel 2; improves current sharing and thermal spreading |
| Pin 8 | Drain 1 | Redundant drain connection for Channel 1; reduces bond-wire inductance in high-di/dt paths |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Enables compact synchronous rectifier or half-bridge designs without discrete pairing tolerance mismatch |
| 100% avalanche tested | Guarantees robustness under inductive switching stress without derating or external snubbers |
| Logic-level gate threshold (1.1–2.7 V) | Direct drive from 3.3 V or 5 V MCUs without level-shifting circuitry |
| Low RDS(on) × Qg (102 mΩ·nC) | Optimizes trade-off between conduction loss and switching loss up to 1 MHz operation |
| Exposed drain thermal pad | Reduces RthJC to 50 °C/W, enabling >2 W dissipation with minimal heatsink area |
Applications
| Server VRM | USB-C PD Adapter |
|---|---|
Use Scenario: High-density 48 V to 12 V intermediate bus converter in rack-mounted servers. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing Schottky diodes in interleaved buck stages. Use Value: Cuts conduction loss by 45% vs. discrete 10 mΩ MOSFETs due to matched RDS(on) and shared thermal path. | Use Scenario: 100 W USB-C Power Delivery adapter with GaN primary and synchronous secondary. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter output stage. Use Value: Achieves >96% efficiency at full load by minimizing reverse recovery loss (Qrr = 4.3 nC) and gate drive overhead. |
| Industrial PLC I/O Module | Automotive ADAS Camera Power |
Use Scenario: 24 V input DC-DC module powering FPGA, ADC, and isolated communication interfaces. IC Role / Device Role / Timing Role: Half-bridge high-side/low-side switch for programmable current sink/source outputs. Use Value: Eliminates need for external bootstrap circuitry via logic-level gate drive and integrated channel isolation. | Use Scenario: Compact 5 V/3 A power rail for automotive-grade camera modules with ASIL-B compliance. IC Role / Device Role / Timing Role: Primary synchronous rectifier in 12 V to 5 V buck converter with extended temperature support. Use Value: Maintains RDS(on) stability across –40 °C to +125 °C ambient, reducing thermal derating by 30% vs. standard MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD95R1K2P7ATMA1 | Single-channel 950 V SiC MOSFET; RDS(on) = 1.2 Ω; Qg = 11 nC | Designed for high-voltage PFC and industrial inverters, not low-voltage synchronous rectification | Select only when >400 V blocking and >100 kHz operation justify SiC cost premium |
| BSZ075N04LS | Dual N-channel 40 V MOSFET; RDS(on) = 7.5 mΩ @ 10 V; Qg = 13.5 nC; PG-TSDSON-8 | Lower RDS(on) but higher gate charge increases switching loss above 300 kHz | Prefer for <300 kHz applications where conduction loss dominates; avoid for >500 kHz designs |
Compared with IPD95R1K2P7ATMA1 and BSZ075N04LS, ISA170170N04LMDSXTMA1 uniquely balances ultra-low Qg (6.0 nC) and moderate RDS(on) (17 mΩ) to maximize efficiency in 300–1000 kHz DC-DC converters where gate drive loss and body diode recovery are critical.
Availability
ISA170170N04LMDSXTMA1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC I/O modules, and automotive ADAS camera power supplies requiring stable component supply and JEDEC-qualified reliability.
Supply support for ISA170170N04LMDSXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This device belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, industrial, and automotive power systems where thermal density and switching speed are limiting factors.
FAQ
What is the maximum safe operating temperature for ISA170170N04LMDSXTMA1?
The junction temperature must not exceed 150 °C under any operating condition. At TC = 100 °C, the device supports 5.2 A continuous drain current per channel. Derating follows the curve in Diagram 2 of the datasheet, with thermal resistance RthJA = 90 °C/W on a 40 mm × 40 mm FR4 board with 6 cm² copper.
Can ISA170170N04LMDSXTMA1 be used in parallel configurations?
No-this part integrates two matched channels in one die and is not intended for paralleling with other units. Its internal matching ensures balanced current sharing between Channel 1 and Channel 2, but external paralleling introduces thermal and dynamic imbalance risks not characterized in the datasheet.
Does the body diode support continuous bidirectional current flow?
The integrated body diode is rated for 3.1 A continuous forward current at TC = 25 °C and 38 A pulsed current. It is optimized for synchronous rectification freewheeling, not AC line rectification; reverse recovery time is 13 ns with Qrr = 4.3 nC, confirming suitability for high-frequency unidirectional commutation only.
Is the PG-DSO-8 package lead-free and RoHS compliant?
Yes-ISA170170N04LMDSXTMA1 uses Pb-free lead plating and meets RoHS Directive 2011/65/EU requirements. It is also halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm, verified through material declaration and third-party testing.
ISA170170N04LMDSXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 3
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 7.2A (Ta), 9.6A (Tc)
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100pF @ 20V
- Power - Max:
- 1.4W (Ta), 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-920
ISA170170N04LMDSXTMA1 FAQ
1.How can I place an order for ISA170170N04LMDSXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISA170170N04LMDSXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISA170170N04LMDSXTMA1 reliable?
The price and inventory of ISA170170N04LMDSXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISA170170N04LMDSXTMA1 is usually 5 days.
3.What payment methods are accepted for ISA170170N04LMDSXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISA170170N04LMDSXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISA170170N04LMDSXTMA1?
ISA170170N04LMDSXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISA170170N04LMDSXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISA170170N04LMDSXTMA1?
For technical support, including ISA170170N04LMDSXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISA170170N04LMDSXTMA1 requirements.
6.How does Aetrix verify that ISA170170N04LMDSXTMA1 is sourced from the original manufacturer or authorized distributors?
All ISA170170N04LMDSXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISA170170N04LMDSXTMA1 meets industry standards.
7.What is the process for return or replacement of ISA170170N04LMDSXTMA1?
All ISA170170N04LMDSXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISA170170N04LMDSXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISA170170N04LMDSXTMA1 part is unused and in its original packaging.
Return procedure for ISA170170N04LMDSXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISA170170N04LMDSXTMA1 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
