Infineon Technologies ISA170230C04LMDSXTMA1

Overview

ISA170230C04LMDSXTMA1 from Infineon is a dual-channel complementary MOSFET pair (N- and P-channel) in a single PG-DSO-8 package, rated for 40 V drain-source voltage, with R_DS(on) of 17 mΩ (N-ch) and 23 mΩ (P-ch) at V_GS = ±10 V, delivering I_D up to ±9.6 A. It serves as a compact half-bridge switch in DC-DC converters and motor control H-bridges.

For engineers reviewing the ISA170230C04LMDSXTMA1 datasheet, ISA170230C04LMDSXTMA1 pinout, ISA170230C04LMDSXTMA1 application, or ISA170230C04LMDSXTMA1 equivalent, key selection criteria include verified complementary channel matching, thermal resistance (R_thJA = 90 °C/W with 6 cm² copper), avalanche energy rating (36 mJ), and gate charge asymmetry (Q_g,N = 6.0–9.0 nC vs Q_g,P = −12.6 to −19 nC).

Technical Context

This device integrates matched N- and P-channel OptiMOS™ 3 power transistors on one die, enabling synchronous rectification and bidirectional switching without external pairing. Its gate threshold voltages are symmetrically specified (V_GS(th),N = 1.1–2.7 V; V_GS(th),P = −1.1 to −2.7 V), and both channels share identical thermal resistance (R_thJC = 50 °C/W) and avalanche ruggedness (E_AS = 36 mJ).

Dynamic parameters reflect optimized trade-offs: low input capacitance (C_iss,N = 880–1100 pF; C_iss,P = 1900–2500 pF) supports fast switching, while higher reverse transfer capacitance in the P-channel (C_rss,P = 38–67 pF vs C_rss,N = 15–26 pF) necessitates careful gate drive design to minimize shoot-through risk in bridge configurations.

Key Specifications

Pinout & Package

Package: PG-DSO-8 (leadless, exposed drain pad), 5.0 mm × 6.0 mm footprint, RoHS-compliant and halogen-free per IEC61249-2-21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Compared with IPB80P04P4L‑03 and IRF7341TRPBF, ISA170230C04LMDSXTMA1 uniquely delivers matched complementary characteristics, integrated thermal management, and production-validated avalanche ruggedness - critical for space-constrained, high-reliability industrial and automotive half-bridge implementations.

Availability

ISA170230C04LMDSXTMA1 is available at Aetrix Electronics and suitable for brushless DC motor control, USB-C power delivery sink modules, and industrial PLC output stages requiring stable component supply across multi-year production cycles.

Supply support for ISA170230C04LMDSXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 3 family, engineered for high-efficiency, high-density power conversion in automotive, industrial, and computing applications where thermal performance and reliability are critical.

FAQ

What is the maximum continuous drain current for each channel at 100 °C case temperature?

The N-channel supports 6.1 A and the P-channel supports −5.6 A at T_C = 100 °C and V_GS = ±10 V, as specified in Tables 2 and 3 of the datasheet. These values account for thermal de-rating and are validated under JEDEC-standard PCB conditions (40 mm × 40 mm FR4 with 6 cm² copper).

Can this device be used in a synchronous buck converter as both high-side and low-side switches?

Yes - the integrated N-channel (high-side) and P-channel (low-side) enable true synchronous operation without external level-shifting circuitry. However, the P-channel's higher R_DS(on) (23 mΩ vs 17 mΩ) and gate charge asymmetry require careful gate driver selection to balance switching losses and prevent shoot-through.

Is the body diode in the N-channel channel rated for continuous conduction?

Yes - the N-channel body diode is rated for 3.1 A continuous forward current at T_C = 25 °C (Table 9), with V_SD = 0.86 V typical at 9.6 A. Its 13 ns reverse recovery time and 4.3 nC Q_rr support high-frequency freewheeling in DC-DC topologies up to 1 MHz.

Does the PG-DSO-8 package require special PCB layout considerations for thermal performance?

Yes - the exposed drain pads (Pins 4/8 and 5/6/7) must be connected to ≥6 cm² of 70 μm-thick copper on the bottom layer using ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves the published R_thJA = 90 °C/W; omitting vias or undersized copper raises junction temperature by >25 °C at full load.