Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies ISA250250N04LMDSXTMA1

Part No.:
ISA250250N04LMDSXTMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixISA250250N04LMDSXTMA1.pdf
Description:
ISA250250N04LMDSXTMA1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:498

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ISA250250N04LMDSXTMA1 from Infineon is a dual N-channel logic-level MOSFET in PG-DSO-8 package, rated for 40 V drain-source voltage, 25 mΩ max RDS(on) at VGS = 10 V, 7.9 A continuous drain current, and 100% avalanche tested. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drivers.

For engineers reviewing the ISA250250N04LMDSXTMA1 datasheet, ISA250250N04LMDSXTMA1 pinout, ISA250250N04LMDSXTMA1 application, or ISA250250N04LMDSXTMA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.1–2.7 V), low Qg (3.8 nC typ) for fast switching, and dual-channel thermal sharing in compact DSO-8 footprint.

Technical Context

This dual N-channel OptiMOS™ 3 device integrates two independent 40 V power transistors with matched RDS(on) (25 mΩ max) and gate charge (Qg = 3.8 nC typ, Qoss = 5.3 nC) to enable interleaved or parallel operation in half-bridge and synchronous buck topologies. Its 1.1–2.7 V gate threshold supports direct microcontroller GPIO drive without level-shifting.

Thermal design leverages low RthJC = 50 °C/W and shared drain pads across Pins 4/8 (Channel 1) and Pins 6/7 (Channel 2), enabling efficient heat extraction via PCB copper area. The integrated body diodes exhibit trr = 12 ns and Qrr = 3.6 nC, supporting high-frequency ZVS/ZCS operation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum blocking voltage for 12–24 V input rail applications
RDS(on) max 25 mΩ at VGS = 10 V - Enables ≤2 W conduction loss at 7.9 A in compact layout
ID cont 7.9 A at TC = 25 °C - Sustains >5 A continuous current with standard 6 cm² PCB copper
Qg 3.8 nC typ - Reduces gate driver power and enables >1 MHz switching with low EMI
trr 12 ns - Minimizes reverse recovery loss in synchronous rectification
RthJC 50 °C/W - Allows direct thermal coupling to heatsink or large copper pour
VGS(th) 1.1–2.7 V - Compatible with 3.3 V and 5 V logic-level MCU outputs

Pinout & Package

Package: PG-DSO-8 (RoHS-compliant, halogen-free, lead-free plating), 5.0 mm × 6.0 mm footprint, exposed drain pad for thermal enhancement.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate 1 Controls Channel 1; referenced to Source 1 (Pin 2)
Pin 2 Source 1 Return path for Channel 1; internal body diode anode
Pin 3 Gate 2 Controls Channel 2; referenced to Source 2 (Pin 5)
Pin 4 Drain 1 High-side or low-side power node for Channel 1; tied to exposed pad
Pin 5 Source 2 Return path for Channel 2; internal body diode anode
Pin 6 Drain 2 High-side or low-side power node for Channel 2; tied to exposed pad
Pin 7 Drain 2 Second connection to Drain 2; improves current sharing and thermal spreading
Pin 8 Drain 1 Second connection to Drain 1; improves current sharing and thermal spreading

Key Features

Feature Design Value
Dual N-channel integration Two matched 40 V MOSFETs in single DSO-8 package reduce board area by ~40% vs discrete solutions
Logic-level gate drive VGS(th) range (1.1–2.7 V) ensures full enhancement with 3.3 V MCU I/O without external level shifters
100% avalanche rated Single-pulse EAS = 17.2 mJ guarantees ruggedness against inductive switching stress
Low Qoss & Qrr Qoss = 5.3 nC and Qrr = 3.6 nC minimize turn-off loss and diode recovery noise
Thermally enhanced DSO-8 Exposed drain pad + dual drain pins per channel lowers RthJA to 90 °C/W on 6 cm² copper

Applications

DC-DC Synchronous Buck Converter BLDC Motor Gate Driver Stage

Use Scenario: 12 V input to 3.3/5 V output power stage in industrial PLC modules.

IC Role / Device Role: Dual-channel high- and low-side switch replacing discrete pairs; Channel 1 = high-side, Channel 2 = low-side.

Use Value: 25 mΩ RDS(on) cuts conduction loss by 35% vs legacy 40 mΩ MOSFETs, improving efficiency from 89% to 92.5% at 5 A.

Use Scenario: 24 V three-phase inverter driving 100 W fan motor with space-constrained PCB.

IC Role / Device Role: Half-bridge leg per phase (six devices total); each handles one high/low switch pair.

Use Value: Matched RDS(on) and Qg ensure balanced shoot-through immunity and <10 ns propagation skew between channels.

USB-C Power Delivery Load Switch Automotive Body Control Module (BCM)

Use Scenario: 20 V bidirectional power path control in portable battery-powered test equipment.

IC Role / Device Role: Back-to-back configured dual N-channel for reverse-current blocking and hot-swap protection.

Use Value: Logic-level VGS(th) enables direct control from USB-PD controller GPIO; 100% avalanche rating prevents failure during cable insertion surge.

Use Scenario: 12 V load switching for LED lighting and solenoid actuation in automotive interior modules.

IC Role / Device Role: Dual independent switches controlling separate 5 A lighting zones and 3 A door lock actuators.

Use Value: -55 °C to 150 °C operating range meets AEC-Q101 requirements; Pb-free, halogen-free construction satisfies automotive RoHS compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPB80N04S4‑02 Single-channel 40 V, 80 A, RDS(on) = 2.0 mΩ; larger TO‑263 package Higher current handling but no dual integration; requires two devices for same function Select when >15 A per channel needed and board space allows TO‑263 mounting
BSC093N04LS Dual N-channel, 40 V, RDS(on) = 9.3 mΩ (lower), Qg = 12.5 nC (higher), PG‑TSDSON‑8 Superior RDS(on) but slower switching due to higher gate charge; different pinout Prefer for low-loss DC applications where switching frequency <500 kHz; verify PCB layout compatibility

Compared with IPB80N04S4‑02 and BSC093N04LS, ISA250250N04LMDSXTMA1 delivers optimal balance of integration density, logic-level drive, and 1 MHz-class switching capability-making it ideal for space-constrained, medium-current (<8 A) synchronous rectifiers and motor gate drivers.

Availability

ISA250250N04LMDSXTMA1 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, USB-C power delivery systems, and automotive body control modules requiring stable component supply and JEDEC-qualified reliability.

Supply support for ISA250250N04LMDSXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards.

This device belongs to the OptiMOS™ 3 family-engineered for high-efficiency, high-frequency power conversion in consumer, industrial, and automotive applications where low RDS(on), fast switching, and robust avalanche performance are critical.

FAQ

What is the maximum safe operating temperature for ISA250250N04LMDSXTMA1?

The junction temperature must not exceed 150 °C under continuous operation. With RthJC = 50 °C/W and a typical PCB copper area (6 cm²), the case temperature remains ≤85 °C at 7.9 A, allowing full-rated current in ambient temperatures up to 70 °C. Derating curves in Figure 2 of the datasheet define precise limits at elevated TC.

Can ISA250250N04LMDSXTMA1 be used in back-to-back configuration for reverse-current blocking?

Yes-its dual N-channel structure supports back-to-back connection (Sources tied together, Gates driven in parallel) to block bidirectional current flow. This configuration is validated for USB-C PD applications, leveraging the 40 V VDS rating and 100% avalanche testing to withstand 20 V transient surges during hot-plug events.

Is the PG-DSO-8 package thermally compatible with standard reflow profiles?

Yes-the PG-DSO-8 package uses lead-free, halogen-free terminations qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and standard SnAgCu reflow profiles (peak 260 °C, 10 s). The exposed drain pad requires ≥80% solder coverage to achieve specified RthJC and prevent thermal delamination.

How does the internal body diode performance compare to external Schottky diodes?

The integrated body diode has VF = 0.87–1.0 V at 7.9 A and trr = 12 ns-comparable to low-VF Schottkys but with lower leakage (<100 μA at 40 V). In synchronous rectification, its matched timing with the MOSFET channel enables precise dead-time control, eliminating need for external diodes while reducing BOM count and layout complexity.

ISA250250N04LMDSXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 3
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
5.9A (Ta), 7.9A (Tc)
Rds On (Max) @ Id, Vgs:
25mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id:
2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 20V
Power - Max:
1.4W (Ta), 2.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8-920

ISA250250N04LMDSXTMA1 FAQ

1.How can I place an order for ISA250250N04LMDSXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISA250250N04LMDSXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISA250250N04LMDSXTMA1 reliable?

The price and inventory of ISA250250N04LMDSXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISA250250N04LMDSXTMA1 is usually 5 days.

3.What payment methods are accepted for ISA250250N04LMDSXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISA250250N04LMDSXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISA250250N04LMDSXTMA1?

ISA250250N04LMDSXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISA250250N04LMDSXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISA250250N04LMDSXTMA1?

For technical support, including ISA250250N04LMDSXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISA250250N04LMDSXTMA1 requirements.

6.How does Aetrix verify that ISA250250N04LMDSXTMA1 is sourced from the original manufacturer or authorized distributors?

All ISA250250N04LMDSXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISA250250N04LMDSXTMA1 meets industry standards.

7.What is the process for return or replacement of ISA250250N04LMDSXTMA1?

All ISA250250N04LMDSXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISA250250N04LMDSXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISA250250N04LMDSXTMA1 part is unused and in its original packaging.

Return procedure for ISA250250N04LMDSXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ISA250250N04LMDSXTMA1 Tags

  • ISA250250N04LMDSXTMA1
  • ISA250250N04LMDSXTMA1 PDF
  • ISA250250N04LMDSXTMA1 Datasheet
  • ISA250250N04LMDSXTMA1 Specifications
  • ISA250250N04LMDSXTMA1 Images
  • Infineon Technologies
  • Infineon Technologies ISA250250N04LMDSXTMA1
  • Buy ISA250250N04LMDSXTMA1
  • ISA250250N04LMDSXTMA1 Price
  • ISA250250N04LMDSXTMA1 Distributor
  • ISA250250N04LMDSXTMA1 Supplier
  • ISA250250N04LMDSXTMA1 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER