Infineon Technologies ISA250300C04LMDSXTMA1

Overview

ISA250300C04LMDSXTMA1 from Infineon is a dual-channel complementary MOSFET pair (N- and P-channel) in a single PG-DSO-8 package, rated for 40 V drain-source voltage, with R_DS(on) of 25 mΩ (N-ch) and 30 mΩ (P-ch) at V_GS = ±10 V, delivering ±7.9 A continuous drain current - designed for compact half-bridge and H-bridge motor control stages in 12–24 V DC systems.

For engineers reviewing the ISA250300C04LMDSXTMA1 datasheet, ISA250300C04LMDSXTMA1 pinout, ISA250300C04LMDSXTMA1 application, or ISA250300C04LMDSXTMA1 equivalent, key selection criteria include verified complementary channel matching, thermal resistance (R_thJA = 90 °C/W with 6 cm² copper), avalanche ruggedness (17.2 mJ), and gate charge asymmetry (Q_g,N = 3.8 nC vs Q_g,P = 8.1 nC).

Technical Context

This dual MOSFET integrates matched N- and P-channel OptiMOS™ 3 silicon in one thermally optimized DSO-8 leadframe package. The N-channel device features 18 mΩ typical R_DS(on) at V_GS = 10 V and 7.9 A I_D, while the P-channel delivers 25 mΩ typical R_DS(on) at V_GS = −10 V and −7.8 A I_D. Both channels share identical 40 V |V_(BR)DSS| rating and are 100% avalanche tested.

Dynamic behavior is characterized by low gate charge asymmetry (Q_gs/Q_gd ratio balanced per channel), fast switching (t_r = 5.3 ns / t_f = 4.0 ns for N-ch; t_r = 11 ns / t_f = 9.8 ns for P-ch), and integrated body diodes with t_rr = 12 ns (N) and 18 ns (P), enabling synchronous rectification in bidirectional DC-DC and motor drive topologies.

Key Specifications

Pinout & Package

Package: PG-DSO-8 (lead pitch 1.27 mm), exposed drain pad for thermal enhancement, RoHS and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Compared with IPB80P04P4L‑04 and SI7850DP-T1-GE3, ISA250300C04LMDSXTMA1 uniquely integrates matched N+P channels in one thermally efficient DSO-8, eliminating inter-device timing skew and reducing gate drive component count by ≥50 % in bidirectional bridge designs.

Availability

ISA250300C04LMDSXTMA1 is available at Aetrix Electronics and suitable for brushed DC motor control, USB-C power delivery switching, industrial PLC output modules, and automotive body control units requiring stable component supply across multi-year production cycles.

Supply support for ISA250300C04LMDSXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™ 3 family - engineered specifically for high-efficiency, space-constrained DC-DC conversion and motor drive applications demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 150 °C, validated per JEDEC standards. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 90 °C/W with 6 cm² PCB copper. Derating is mandatory above 100 °C ambient; full-rated current is only guaranteed at T_A ≤ 71 °C with standard layout.

Can this device be used in synchronous rectification mode?

Yes - both integrated body diodes exhibit fast reverse recovery (t_rr = 12 ns for N-ch, 18 ns for P-ch) and low forward voltage (0.87 V / −0.88 V), enabling synchronous rectification in buck-derived topologies up to 500 kHz. Gate drive must actively commutate both channels to avoid body diode conduction.

Is the PG-DSO-8 package compatible with standard reflow profiles?

Yes - the package is qualified for lead-free reflow per J-STD-020 Rev E, with peak temperature up to 260 °C for 30 seconds. The exposed drain pad requires solder stencil aperture ≥80 % coverage and thermal vias (≥6×0.3 mm) to inner ground planes for optimal thermal transfer and mechanical reliability.

How does the gate plateau voltage affect drive circuit design?

The N-channel gate plateau occurs at ~3.2 V and P-channel at ~−3.2 V, indicating threshold stabilization during Miller region transition. Drive circuits must supply sufficient peak current (>1 A) to traverse this region rapidly; insufficient drive causes increased switching losses and localized heating at V_GS ≈ 3.2 V.