Infineon Technologies ISC011N03L5SATMA1

Overview

ISC011N03L5SATMA1 from Infineon Technologies is an N-channel OptiMOSTM power MOSFET rated for 30 V drain-source voltage, 1.1 mΩ maximum R_DS(on) at V_GS = 4.5 V, and 100 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (Q_g = 72 nC at 0–10 V), 40 nC output charge (Q_OSS), and is optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the ISC011N03L5SATMA1 datasheet, ISC011N03L5SATMA1 pinout, ISC011N03L5SATMA1 application, or ISC011N03L5SATMA1 equivalent, key selection criteria include its 1.1 mΩ on-resistance at 4.5 V drive, thermal resistance of 1.3 K/W (junction-to-case), SuperSO8 package footprint, and validated performance in high-current, high-frequency DC-DC conversion with tight thermal constraints.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell pitch and reduced specific on-resistance for enhanced conduction efficiency. Its gate threshold voltage (1.2–2.0 V) enables robust 4.5 V logic-level drive compatibility while maintaining low shoot-through risk in synchronous rectification.

The device integrates a low-V_SD body diode (0.8–1.0 V at 30 A, 25 °C) with 20 nC reverse recovery charge (Q_rr) and exhibits stable R_DS(on) over temperature - increasing only ~1.8× from 25 °C to 150 °C - supporting reliable operation in thermally demanding power delivery networks.

Key Specifications

Pinout & Package

ISC011N03L5SATMA1 is housed in a PG-TDSON-8 (SuperSO8) thermally enhanced surface-mount package with exposed drain pad on the bottom side for optimal heat transfer. The 5 mm × 6 mm footprint supports high-current PCB routing and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL8721PBF and BSC010N03LS, ISC011N03L5SATMA1 delivers the best balance of ultra-low R_DS(on), moderate Q_g, and high avalanche energy - making it optimal for high-current, high-reliability server and AI accelerator power stages where both efficiency and fault tolerance are critical.

Availability

ISC011N03L5SATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery units, AI accelerator board power stages, and industrial FPGA power supplies requiring stable component supply and long-lifecycle support.

Supply support for ISC011N03L5SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOSTM 30 V product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and AI hardware where thermal density and switching speed are primary constraints.

FAQ

Is ISC011N03L5SATMA1 suitable for 3.3 V gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.0 V, and R_DS(on) is fully specified at V_GS = 4.5 V. While 3.3 V drive yields higher R_DS(on) (~1.8 mΩ), it remains fully functional for medium-current applications with appropriate thermal design.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies 6 cm² of 70 µm thick copper on a 40 mm × 40 mm FR4 PCB for R_thJA = 50 K/W. For optimal performance, use ≥10 cm² of inner-layer copper connected via multiple thermal vias to the exposed drain pad, especially in multi-phase layouts.

Does ISC011N03L5SATMA1 have integrated ESD protection?

No - this MOSFET does not include on-die ESD protection circuitry. External TVS diodes or series resistors are recommended on gate traces in systems exposed to handling or system-level ESD events per IEC 61000-4-2 Level 4.

Can it be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) ensures inherent current sharing. Use matched gate drive layout, identical trace lengths, and Kelvin-source connections to maintain balance across ≥2 parallel devices.