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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC026N03L5SATMA1

Name: ISC026N03L5SATMA1
Brand: Infineon Technologies
SKU: ISC026N03L5SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC026N03L5SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC026N03L5SATMA1.pdf

Description:: MOSFET N-CH 30V 24A/100A TDSON

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Product details

Overview

ISC026N03L5SATMA1 from Infineon Technologies is an N-channel OptiMOS™ Power-MOSFET rated for 30 V drain-source voltage, with a maximum R_DS(on) of 2.6 mΩ at V_GS = 4.5 V, 100 A continuous drain current (T_C = 25 °C), and 16 nC output charge (Q_OSS). It is optimized for high-efficiency synchronous buck converters in server VRMs and POL modules.

For engineers reviewing the ISC026N03L5SATMA1 datasheet, ISC026N03L5SATMA1 pinout, ISC026N03L5SATMA1 application, or ISC026N03L5SATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, thermal resistance (R_thJC = 2.6 K/W), Q_G = 26 nC at 0–10 V, and SuperSO8 package compatibility with high-current PCB layouts.

Technical Context

This device is a trench-based silicon MOSFET designed for high-frequency switching in DC-DC power stages. Its low gate charge (Q_G = 26 nC) and fast switching times (t_d(off) = 21 ns, t_f = 3.6 ns) support operation above 1 MHz while minimizing conduction and switching losses.

The integrated body diode exhibits Q_rr = 15 nC and V_SD = 0.83 V at I_F = 30 A, enabling efficient synchronous rectification. Thermal design leverages bottom-side cooling via the exposed drain pad in the PG-TDSON-8 (SuperSO8) package, achieving R_thJC = 2.6 K/W to case.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/5 V input bus applications
R_DS(on), max	2.6 mΩ @ V_GS = 4.5 V - Enables <1 W conduction loss at 20 A in compact VRMs
I_D, cont.	100 A @ T_C = 25 °C - Supports high-current single-phase POL designs
Q_OSS	16 nC - Reduces turn-off energy and improves light-load efficiency
Q_G	26 nC @ 0–10 V - Matches standard gate drivers without requiring oversized drive capability
R_thJC	2.6 K/W - Enables direct heatsink mounting for thermal management in dense layouts
V_GS(th)	1.2–2.0 V - Ensures robust turn-on with 3.3 V logic-level control

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), thermally enhanced surface-mount package with exposed drain pad on bottom side for low-inductance, high-current routing and direct thermal coupling to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	High-current power path; electrically and thermally connected to exposed pad
4	Gate (G)	Control terminal; requires low-impedance drive due to 26 nC total gate charge
5, 6, 7	Source (S)	Power return path; multiple pins reduce source inductance in high-dI/dt switching

Key Features

Feature	Design Value
Optimized for buck converter topologies	Low Q_G/Q_GD ratio (26 nC / 4.0 nC) minimizes Miller-induced shoot-through risk
Very low R_DS(on) at 4.5 V	2.6 mΩ enables use with 3.3 V or 5 V gate drivers in modern controller ICs
Superior thermal resistance	R_thJC = 2.6 K/W allows >90 W power dissipation with minimal case temperature rise
Integrated Schottky-like body diode	V_SD = 0.83 V and Q_rr = 15 nC reduce reverse recovery loss in synchronous rectification
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 for industrial and server-grade environmental compliance

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck regulators supplying CPU/GPU core voltages in 1U/2U servers.

IC Role / Device Role: High-side power switch in synchronous buck stage, operating at 300–600 kHz with 3.3 V gate drive.

Use Value: 2.6 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 4.5 mΩ devices, improving full-load efficiency by ~1.2%.

Use Scenario: Compact 12 V-to-1 V POL converters powering ASICs and FPGAs in telecom baseband units.

IC Role / Device Role: Low-side synchronous rectifier in dual-phase interleaved buck, driven by dedicated gate driver.

Use Value: Q_OSS = 16 nC and low C_oss minimize turn-off loss, enabling stable operation up to 1 MHz switching frequency.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Half-bridge gate driver stages controlling BLDC motor phases in servo drives and PLC I/O modules.

IC Role / Device Role: Low-side switch in isolated gate driver output stage, handling peak currents >50 A.

Use Value: 100 A I_D rating and R_thJC = 2.6 K/W allow sustained 40 A RMS current without external heatsink under forced air.

Use Scenario: 12 V-to-3.3 V/5 V power supplies for radar ECU and camera modules in ADAS domain controllers.

IC Role / Device Role: Primary switch in automotive-qualified buck converter meeting AEC-Q101 stress requirements.

Use Value: Qualified per JEDEC standards with T_j range –55 °C to 150 °C ensures reliability across under-hood temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB020N03L3 G	R_DS(on) = 2.0 mΩ @ 4.5 V; Q_G = 31 nC; same PG-TDSON-8 package	Higher conduction efficiency but slower switching due to higher Q_G	Prefer when conduction loss dominates (e.g., low-frequency, high-duty-cycle POL)
BSC020N03LS	R_DS(on) = 2.2 mΩ @ 4.5 V; Q_OSS = 18 nC; R_thJC = 3.0 K/W	Slightly higher switching loss and thermal resistance than ISC026N03L5S	Choose when supply chain diversification is required and 0.4 K/W R_thJC margin is acceptable

Compared with IPB020N03L3 G and BSC020N03LS, ISC026N03L5SATMA1 offers the best balance of low Q_G (26 nC), ultra-low R_DS(on), and industry-leading R_thJC, making it optimal for high-frequency, high-current server and telecom POL designs where thermal headroom and gate drive simplicity are critical.

Availability

ISC026N03L5SATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive gate drivers requiring stable component supply and AEC-Q101-qualified performance.

Supply support for ISC026N03L5SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 30 V product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) at logic-level gate drive and thermal performance are primary design constraints.

FAQ

What is the maximum junction temperature and thermal derating behavior?

The ISC026N03L5SATMA1 supports a maximum junction temperature of 150 °C and is qualified per JEDEC standards. Derating begins at T_C = 25 °C: continuous drain current drops linearly to 58 A at T_C = 100 °C (V_GS = 4.5 V) and 67 A at T_C = 100 °C (V_GS = 10 V), per Table 2 in the datasheet.

Is this MOSFET suitable for synchronous rectification in a buck converter?

Yes - its integrated body diode has V_SD = 0.83 V at 30 A and Q_rr = 15 nC, enabling efficient synchronous rectification. The low Q_G (26 nC) and fast t_f = 3.6 ns further reduce cross-conduction loss when paired with a complementary high-side switch.

Does ISC026N03L5SATMA1 require a gate resistor for stability?

A gate resistor is recommended: typical evaluation uses R_G,ext = 1.6 Ω (per switching time test conditions). This value balances switching speed (t_d(off) = 21 ns) and gate oscillation suppression; values below 1 Ω increase ringing risk, while >3 Ω degrades efficiency without significant EMI benefit.

How does the SuperSO8 package improve thermal performance over standard SO-8?

The SuperSO8 (PG-TDSON-8) features an exposed drain pad on the bottom side, directly soldered to large PCB copper areas. This achieves R_thJC = 2.6 K/W - over 3× better than standard SO-8 (typically >10 K/W) - enabling >40 W power dissipation without external heatsinking in vertical airflow configurations.

ISC026N03L5SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

ISC026N03L5SATMA1 FAQ

1.How can I place an order for ISC026N03L5SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC026N03L5SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC026N03L5SATMA1 reliable?

The price and inventory of ISC026N03L5SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC026N03L5SATMA1 is usually 5 days.

3.What payment methods are accepted for ISC026N03L5SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC026N03L5SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC026N03L5SATMA1?

ISC026N03L5SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC026N03L5SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC026N03L5SATMA1?

For technical support, including ISC026N03L5SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC026N03L5SATMA1 requirements.

6.How does Aetrix verify that ISC026N03L5SATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC026N03L5SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC026N03L5SATMA1 meets industry standards.

7.What is the process for return or replacement of ISC026N03L5SATMA1?

All ISC026N03L5SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC026N03L5SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC026N03L5SATMA1 part is unused and in its original packaging.

Return procedure for ISC026N03L5SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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