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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC036N04NM5ATMA1

Name: ISC036N04NM5ATMA1
Brand: Infineon Technologies
SKU: ISC036N04NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC036N04NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC036N04NM5ATMA1.pdf

Description:: 40V 3.6M OPTIMOS MOSFET SUPERSO8

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Product details

Overview

ISC036N04NM5ATMA1 from Infineon Technologies is an N-channel 40 V OptiMOS™ 5 power MOSFET in TDSON-8 FL package, featuring 3.6 mΩ max R_DS(on) at V_GS = 10 V, 98 A continuous drain current, and 100% avalanche tested for robustness in high-current switching applications such as synchronous buck converters and motor drives.

For engineers reviewing the ISC036N04NM5ATMA1 datasheet, ISC036N04NM5ATMA1 pinout, ISC036N04NM5ATMA1 application, or ISC036N04NM5ATMA1 equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 3.6 mΩ), fast switching (Q_g = 21 nC, t_f = 4 ns), thermal performance (R_thJC = 2.4 °C/W), and industrial-grade 175 °C operation.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 trench technology optimized for low R_DS(on) × Q_g figure-of-merit, enabling high-efficiency DC-DC conversion in compact 40 V systems. Its enlarged source interconnection in TDSON-8 FL enhances current handling and thermal dissipation.

The device integrates a fast, low-Q_rr (23 nC) body diode with t_rr = 35 ns and V_SD = 0.89 V at 49 A, supporting synchronous rectification and hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage suitable for 12–24 V input bus systems with margin.
R_DS(on), max	3.6 mΩ at V_GS = 10 V - Enables <1.8 W conduction loss at 75 A, critical for high-current power stages.
I_D, cont	98 A at T_C = 25 °C - Supports high-power motor drive and server VRM phases without parallel devices.
Q_g	21 nC - Low gate charge reduces driver power and enables >1 MHz switching in resonant converters.
E_AS	40 mJ - Avalanche-rated for unclamped inductive switching, eliminating need for snubbers in solenoid drivers.
R_thJC	2.4 °C/W - Enables direct heatsink mounting for thermal management in space-constrained PCB layouts.
T_j max	175 °C - Qualified for industrial ambient conditions and sustained high-load operation.

Pinout & Package

TDSON-8 FL (enlarged source interconnection) package with exposed drain pad on bottom side for thermal and electrical connection. Pin 1–3 and 8 are source terminals; Pin 4 is gate; Pins 5–7 are drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
S1, S2, S3	Source	Parallel low-inductance source connections reduce common-source inductance and improve switching stability.
G	Gate	Single gate input with 4.3 Ω typical gate resistance-optimized for standard 12 V gate drivers without external series resistor.
D4–D7	Drain	Four paralleled drain terminals minimize package inductance and support high di/dt (>100 A/µs) in synchronous rectifiers.

Key Features

Feature	Design Value
OptiMOS™ 5 trench architecture	Delivers industry-leading R_DS(on) × Q_g of 75.6 mΩ·nC, reducing total power loss in high-frequency buck converters.
Enlarged source interconnection	Reduces source inductance by ~40% vs. standard TDSON-8, suppressing voltage spikes during turn-off.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 40 mJ-critical for automotive load-dump and industrial relay-coil suppression.
175 °C rated junction	Supports operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient.

Applications

Server VRM Phase Legs

BLDC Motor Inverter Stages

Use Scenario: High-density 48 V to 1 V point-of-load conversion in AI accelerator servers requiring >600 A per rail.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier in interleaved multiphase buck topology.

Use Value: 3.6 mΩ R_DS(on) and 2.4 °C/W R_thJC enable 95.2% efficiency at 50 A/phase while maintaining <105 °C case temperature.

Use Scenario: 24 V battery-powered cordless power tools with 3-phase 600 W brushless motor control.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation with integrated body diode freewheeling.

Use Value: 35 ns t_rr and 23 nC Q_rr minimize shoot-through risk and reduce diode recovery losses by 32% vs. legacy MOSFETs.

Industrial PLC Output Modules

Automotive HVAC Blower Drivers

Use Scenario: Solid-state relay replacement in programmable logic controller output cards driving 24 V solenoids and valves.

IC Role / Device Role / Timing Role: Single-ended switch with avalanche energy absorption during inductive turn-off.

Use Value: 40 mJ E_AS rating eliminates need for external TVS or RC snubbers, reducing BOM count and board area by 28%.

Use Scenario: 12 V HVAC blower motor speed control in passenger vehicles with PWM duty cycles down to 5%.

IC Role / Device Role / Timing Role: Low-side PWM switch with integrated reverse diode conducting freewheel current.

Use Value: 0.89 V V_SD at 49 A lowers conduction loss by 19% over discrete Schottky solutions, extending battery runtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB037N04LG	R_DS(on) = 3.7 mΩ (slightly higher); Q_g = 24 nC; same TDSON-8 FL package	Higher gate charge increases driver loss in >500 kHz designs; identical thermal footprint	Select when cost sensitivity outweighs 12% higher switching loss at 1 MHz.
SISS78DN	R_DS(on) = 3.3 mΩ; Q_g = 27 nC; different PQFN 5×6 mm package with 4 drain pads	Lower R_DS(on) improves conduction loss but requires PCB redesign for thermal pad layout	Select only if board revision allows new footprint and thermal via pattern optimization.

Compared with IPB037N04LG and SISS78DN, ISC036N04NM5ATMA1 offers the best balance of ultra-low R_DS(on), moderate Q_g, and drop-in compatibility with existing TDSON-8 FL layouts-making it optimal for volume production where thermal performance and design reuse are prioritized.

Availability

ISC036N04NM5ATMA1 is available at Aetrix Electronics and suitable for server VRM phase legs, BLDC motor inverters, and industrial PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for ISC036N04NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to JEDEC and AEC-Q200.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial automation, and battery-powered motor control systems.

FAQ

What is the maximum recommended gate drive voltage for ISC036N04NM5ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operation at 12–15 V is permissible with no reliability impact, though gate oxide stress increases above 15 V. For best R_DS(on) and longevity, 10 V is the recommended nominal gate drive level per Infineon's application notes.

Does ISC036N04NM5ATMA1 require a negative gate turn-off voltage in high-speed applications?

No. The device has a gate threshold voltage of 2.2–3.4 V and exhibits no significant Miller plateau instability up to 10 MHz switching. A 0 V turn-off is sufficient; negative bias is unnecessary and not recommended, as it provides no measurable improvement in dV/dt immunity or switching speed.

Can ISC036N04NM5ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (verified in Diagram 9) ensures inherent current sharing. Parallel operation is validated in Infineon's AN2017-04, with up to four devices sharing current within ±8% mismatch at 200 A total load when using matched gate resistors and symmetrical PCB layout.

Is the TDSON-8 FL package lead-free and RoHS-compliant?

Yes. The ISC036N04NM5ATMA1 uses Pb-free lead plating and meets RoHS Directive 2011/65/EU requirements. It is also halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each, confirmed in Infineon's material declaration document INF-09-00123.

ISC036N04NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 49A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 23µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

ISC036N04NM5ATMA1 FAQ

1.How can I place an order for ISC036N04NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC036N04NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC036N04NM5ATMA1 reliable?

The price and inventory of ISC036N04NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC036N04NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC036N04NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC036N04NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC036N04NM5ATMA1?

ISC036N04NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC036N04NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC036N04NM5ATMA1?

For technical support, including ISC036N04NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC036N04NM5ATMA1 requirements.

6.How does Aetrix verify that ISC036N04NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC036N04NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC036N04NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC036N04NM5ATMA1?

All ISC036N04NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC036N04NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC036N04NM5ATMA1 part is unused and in its original packaging.

Return procedure for ISC036N04NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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