Infineon Technologies ISG0613N04NM6HATMA1

Overview

ISG0613N04NM6HATMA1 from Infineon Technologies is a symmetrical dual N-channel 40 V OptiMOSTM6 power transistor in PG-VITFN-10 package, featuring 0.88 mΩ max R_DS(on), 299 A continuous drain current, and 76 nC Q_oss. It integrates two matched MOSFETs with internal body diodes and is engineered for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the ISG0613N04NM6HATMA1 datasheet, ISG0613N04NM6HATMA1 pinout, ISG0613N04NM6HATMA1 application, or ISG0613N04NM6HATMA1 equivalent, key selection criteria include low R_DS(on) at 6 V gate drive, avalanche ruggedness (366 mJ), thermal resistance (0.6 °C/W j-c), and half-bridge symmetry for balanced switching loss distribution.

Technical Context

This device implements a monolithic symmetrical half-bridge topology with isolated gate terminals for each MOSFET (Q1 and Q2), enabling independent control of high-side and low-side switching. Its optimized charge characteristics-69 nC total gate charge and 9.6 nC Q_gd-support fast, low-loss transitions in high-frequency SMPS operating up to 1 MHz.

The integrated body diodes exhibit 0.79 V typical forward voltage at 50 A and 40 ns reverse recovery time, reducing dead-time losses and improving light-load efficiency. Thermal design is supported by 0.6 °C/W junction-to-case resistance and qualification per JEDEC industrial standards (−55 °C to 175 °C).

Key Specifications

Pinout & Package

PG-VITFN-10 is a thermally enhanced 10-pin exposed-pad TDFN package with dual-source pads for parallel current handling and low-inductance layout. The exposed drain pad occupies 80% of the bottom surface area for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel half-bridge power transistor applications.

Compared with IPB061N04LGATMA1 and IRFH7107TRPBF, ISG0613N04NM6HATMA1 delivers system-level advantages in space-constrained, high-reliability 40 V half-bridge designs-reducing component count by 2×, eliminating layout mismatch, and guaranteeing avalanche ruggedness without external protection.

Availability

ISG0613N04NM6HATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery systems, and telecom DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for ISG0613N04NM6HATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM6 family-designed specifically for high-current, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal performance are critical.

FAQ

What is the maximum recommended gate drive voltage for ISG0613N04NM6HATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operation at 6 V achieves 0.73 mΩ R_DS(on), making it compatible with standard 5 V logic-level drivers. Exceeding 12 V does not significantly reduce R_DS(on) and increases gate oxide stress without functional benefit.

Does ISG0613N04NM6HATMA1 require external bootstrap circuitry for high-side drive?

Yes. As a dual N-channel half-bridge with isolated gate terminals, the high-side MOSFET (Q2) requires a floating gate driver with bootstrap or isolated supply to maintain V_GS > 6 V during high-side conduction. The low-side gate (Q1) is referenced to its source (Pins 1–3), enabling direct logic-level drive.

How is thermal performance validated for this package in multi-layer PCB designs?

Thermal resistance values (R_thJC = 0.6 °C/W, R_thJA = 50 °C/W) are measured on a standardized 40 mm × 40 mm FR4 PCB with 6 cm² copper area for drain connection. For multi-layer boards, adding internal copper planes beneath the exposed pad reduces R_thJA by up to 30%, verified via JEDEC JESD51-2 transient thermal testing.

Can ISG0613N04NM6HATMA1 be used in paralleled configurations beyond the internal dual die?

No. The device is a monolithic dual-die half-bridge with shared thermal and electrical paths. Paralleling multiple ISG0613N04NM6HATMA1 units is not recommended due to mismatch in dynamic parameters (Q_gd, C_iss) and lack of individual source sensing. For higher current, use multi-phase controller architectures with independent half-bridge channels.