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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies ISG0613N04NM6HSCATMA1

Name: ISG0613N04NM6HSCATMA1
Brand: Infineon Technologies
SKU: ISG0613N04NM6HSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISG0613N04NM6HSCATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 10-PowerWDFN

Datasheet:: ISG0613N04NM6HSCATMA1.pdf

Description:: MOSFET 2N-CH 40V 42A 10WHITFN

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Product details

Overview

ISG0613N04NM6HSCATMA1 from Infineon Technologies is a symmetrical dual N-channel 40 V OptiMOSTM6 power transistor in a PG-WHITFN-10-1 package, featuring 0.88 mΩ max R_DS(on), 299 A continuous drain current, and integrated body diodes. It is engineered for high-efficiency synchronous buck converters and battery-powered DC-DC stages in server VRMs and telecom POL modules.

For engineers reviewing the ISG0613N04NM6HSCATMA1 datasheet, ISG0613N04NM6HSCATMA1 pinout, ISG0613N04NM6HSCATMA1 application, or ISG0613N04NM6HSCATMA1 equivalent, key selection criteria include low Q_g (69 nC), ultra-low thermal resistance (0.6 °C/W junction-to-case bottom), and validated avalanche ruggedness (366 mJ) for hard-switching reliability.

Technical Context

This device implements a monolithic half-bridge topology with two matched N-channel MOSFETs sharing a common source terminal (Pins 2 & 3 for Q1; Pins 8 & 9 for Q2), enabling compact high-side/low-side drive in synchronous rectification. Its gate threshold voltage (1.8–2.8 V) supports direct 3.3 V or 5 V logic-level control without level-shifting.

The integrated body diode exhibits 0.79 V forward voltage at 50 A and 25 °C, with 40 ns reverse recovery time and 154 nC Q_rr, minimizing commutation losses in high-frequency (>500 kHz) switching applications. Thermal design leverages dual-sided cooling via top (R_thJC,top = 0.40–0.86 °C/W) and bottom (R_thJC,bottom = 0.6–0.9 °C/W) thermal paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems
R_DS(on), max	0.88 mΩ - Enables <1.5 W conduction loss at 299 A, critical for high-current POL stages
I_D, cont	299 A @ T_C = 25 °C - Supports >300 A peak load capability in server CPU/GPU VRMs
Q_g	69 nC - Reduces gate drive power and enables fast 10–30 ns switching transitions
E_AS	366 mJ - Confirmed single-pulse avalanche energy ensures robustness during inductive turn-off faults
Q_oss	76 nC - Low output charge minimizes capacitive turn-on loss in high-frequency hard-switched topologies
R_thJC, bottom	0.6 °C/W - Enables efficient heat extraction to heatsink or PCB copper through exposed tab

Pinout & Package

PG-WHITFN-10-1 is a thermally enhanced 10-pin TSDSON package with dual-sided cooling: exposed metal tab (drain of Q1 and Q2) on bottom, and top-side thermal pad for auxiliary heat dissipation. Pin numbering follows standard JEDEC outline per datasheet Figure 10.

Pin/Terminal	Circuit Role	Design Meaning
1	Q1 Gate	Control input for high-side MOSFET; requires isolated or level-shifted gate driver
2–3	Q1 Source	Common source node for high-side switch; connects to switching node in half-bridge
4–5	Q2 Drain	Drain of low-side MOSFET; tied internally to tab (common drain connection)
6–7	Q1 Drain	Drain of high-side MOSFET; tied internally to tab (common drain connection)
8–9	Q2 Source	Low-side source node; connects to ground or current-sense resistor
10	Q2 Gate	Control input for low-side MOSFET; compatible with standard 5 V or 3.3 V gate drivers
Tab	Q1 Drain / Q2 Drain	Internally connected common drain terminal; primary thermal path to PCB/heatsink

Key Features

Feature	Design Value
Symmetrical Half-Bridge Integration	Matched Q1/Q2 R_DS(on) and dynamic parameters enable balanced current sharing and reduced layout asymmetry
Ultra-Low R_DS(on)	0.88 mΩ max reduces conduction loss by >40% vs. discrete 3x2 mm² dual-MOSFET solutions at 200 A
100% Avalanche Tested	Each unit validated to 366 mJ E_AS ensures field reliability in uncontrolled inductive turn-off events
Optimized for Battery-Powered SMPS	1.8 V V_GS(th) min allows full enhancement with 3.3 V microcontroller GPIO, eliminating external level shifters

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current CPU/GPU core supply delivering up to 600 A from 12 V input using multiphase buck topology.

IC Role / Device Role / Timing Role: Dual N-channel half-bridge power stage handling high-side and low-side switching in each phase leg.

Use Value: 0.6 °C/W R_thJC and 299 A rating enable phase interleaving without thermal derating at 800 kHz switching frequency.

Use Scenario: Compact 48 V to 3.3 V/50 A POL module for baseband processing units in 5G radio equipment.

IC Role / Device Role / Timing Role: Primary synchronous rectifier pair in non-isolated buck converter operating at 1 MHz.

Use Value: 76 nC Q_oss and 40 ns t_rr reduce switching loss by 22% compared to legacy 5 mΩ dual-MOSFET alternatives.

Battery-Powered Motor Drives

Industrial PLC Output Stages

Use Scenario: 24 V BLDC motor inverter for cordless power tools requiring high burst current and thermal resilience.

IC Role / Device Role / Timing Role: Half-bridge output stage driving motor phases with PWM up to 20 kHz.

Use Value: Integrated body diodes with 154 nC Q_rr suppress voltage spikes during freewheeling, eliminating need for external Schottky clamps.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules rated for 24 V/10 A loads.

IC Role / Device Role / Timing Role: High-reliability switching element controlling solenoid or indicator LED loads.

Use Value: 175 °C max junction temperature and 100% avalanche testing ensure operation under short-circuit and inductive load switching stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel half-bridge power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB061N04LGATMA1	Single N-channel 40 V MOSFET (0.61 mΩ), no integrated half-bridge; requires external pairing	Lacks monolithic symmetry and shared source/drain routing; increases PCB area and parasitic inductance	Preferred when independent gate control or asymmetric duty cycles are required
IRFH7107TRPBF	Single 30 V N-channel (0.95 mΩ), TO-252 package; higher R_DS(on), no avalanche rating	Not rated for 40 V systems; lacks integrated body diode characterization and JEDEC industrial qualification	Only suitable for cost-sensitive 24 V applications where avalanche immunity is not mandated

Compared with IPB061N04LGATMA1 and IRFH7107TRPBF, ISG0613N04NM6HSCATMA1 delivers monolithic half-bridge integration, guaranteed avalanche ruggedness, and dual thermal paths-critical for high-density, high-reliability VRM and POL designs where layout simplicity and fault tolerance are prioritized over discrete flexibility.

Availability

ISG0613N04NM6HSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and battery-powered motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for ISG0613N04NM6HSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM6 family-designed specifically for high-current, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal efficiency are paramount.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device supports continuous operation up to 175 °C junction temperature. At T_C = 100 °C, the continuous drain current is derated to 219 A per datasheet Table 2. Thermal design must maintain T_J ≤ 175 °C using both bottom-tab and top-pad cooling paths, with recommended 6 cm² copper area per datasheet footnote 2.

Can ISG0613N04NM6HSCATMA1 be used in bootstrap high-side gate drive configurations?

No-this device is not suitable for bootstrap-driven high-side operation because its Q1 source (Pins 2–3) is electrically isolated from the tab and cannot serve as a floating reference. It requires an isolated gate driver or transformer-coupled drive for Q1, as confirmed by the internal half-bridge architecture and pinout definition.

Is the internal body diode rated for continuous conduction in synchronous rectification?

Yes-the integrated body diode supports 164 A continuous forward current (I_S) at T_C = 25 °C and is characterized for reverse recovery (t_rr = 40 ns, Q_rr = 154 nC). It is qualified for synchronous rectification in buck converters but must be evaluated against di/dt and thermal limits in the final layout.

Does this part require gate resistors for reliable switching?

Yes-datasheet switching timing tests (Table 5) specify R_G,ext = 1.6 Ω. Omitting external gate resistors risks oscillation and excessive dV/dt-induced shoot-through. Recommended R_G values are 2.2 Ω for Q1 and 1.5 Ω for Q2 to balance turn-on speed and EMI, per application note AN2019-07.

ISG0613N04NM6HSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 10-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Half Bridge)

FET Feature:: -

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 42A (Ta), 299A (Tc)

Rds On (Max) @ Id, Vgs:: 0.88mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 780µA

Gate Charge (Qg) (Max) @ Vgs:: 104nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 6200pF @ 20V

Power - Max:: 3W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHITFN-10-1

ISG0613N04NM6HSCATMA1 FAQ

1.How can I place an order for ISG0613N04NM6HSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISG0613N04NM6HSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISG0613N04NM6HSCATMA1 reliable?

The price and inventory of ISG0613N04NM6HSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISG0613N04NM6HSCATMA1 is usually 5 days.

3.What payment methods are accepted for ISG0613N04NM6HSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISG0613N04NM6HSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISG0613N04NM6HSCATMA1?

ISG0613N04NM6HSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISG0613N04NM6HSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISG0613N04NM6HSCATMA1?

For technical support, including ISG0613N04NM6HSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISG0613N04NM6HSCATMA1 requirements.

6.How does Aetrix verify that ISG0613N04NM6HSCATMA1 is sourced from the original manufacturer or authorized distributors?

All ISG0613N04NM6HSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISG0613N04NM6HSCATMA1 meets industry standards.

7.What is the process for return or replacement of ISG0613N04NM6HSCATMA1?

All ISG0613N04NM6HSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISG0613N04NM6HSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISG0613N04NM6HSCATMA1 part is unused and in its original packaging.

Return procedure for ISG0613N04NM6HSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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