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Infineon Technologies ISG0614N06NM5HATMA1
- Part No.:
- ISG0614N06NM5HATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 10-PowerVDFN
- Datasheet:
-
ISG0614N06NM5HATMA1.pdf
- Description:
- MOSFET 2N-CH 60V 31A 10VITFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,976
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Product details
Overview
ISG0614N06NM5HATMA1 from Infineon Technologies is a dual N-channel 60 V OptiMOSTM5 symmetrical half-bridge power MOSFET pair in PG-VITFN-10 package, featuring 1.6 mΩ max RDS(on), 233 A continuous drain current, 74 nC Qoss, and integrated body diodes. It is engineered for high-efficiency synchronous rectification and high-frequency DC-DC conversion in battery-powered industrial SMPS.
For engineers reviewing the ISG0614N06NM5HATMA1 datasheet, ISG0614N06NM5HATMA1 pinout, ISG0614N06NM5HATMA1 application, or ISG0614N06NM5HATMA1 equivalent, key selection criteria include low RDS(on) at 6 V gate drive, thermal resistance (RthJC = 0.6 °C/W), avalanche ruggedness (EAS = 313 mJ), and symmetrical half-bridge layout for phase-leg switching.
Technical Context
This device integrates two matched N-channel enhancement-mode MOSFETs in a single thermally optimized clip-bonded VITFN package, enabling precise timing alignment and minimized parasitic inductance between high-side and low-side switches. Its gate threshold voltage (2.1–3.3 V) and plateau voltage (4.4 V) support robust operation with standard 5 V or 6 V logic-level drivers.
The symmetrical topology supports bidirectional current flow and synchronous rectification in buck, boost, and LLC resonant converters. Internal body diodes with 0.84 V forward voltage (Tj = 25 °C) and 39 ns reverse recovery time enable efficient freewheeling without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and transient overvoltage margins |
| RDS(on), max | 1.6 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 200 A, critical for high-current power stages |
| ID, cont | 233 A @ TC = 25 °C - Supports high-power density designs with minimal paralleling |
| Qoss | 74 nC - Low output charge reduces turn-off losses in hard-switched topologies above 300 kHz |
| RthJC | 0.6 °C/W - Enables direct heatsink mounting for >150 W dissipation without thermal derating |
| EAS | 313 mJ - Confirmed single-pulse avalanche capability ensures reliability under inductive load switching stress |
| VSD | 0.84 V @ IF = 50 A - Low forward drop of internal body diode minimizes freewheeling losses in synchronous rectifiers |
Pinout & Package
PG-VITFN-10 is a thermally enhanced, leadless surface-mount package with exposed drain pads on both sides for dual-side cooling and ultra-low junction-to-case thermal resistance. The clip-bonded construction eliminates bond wires to reduce parasitic inductance and improve current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Q1 Source | Low-side source node; common reference for gate driver return path and current sensing |
| Pins 2–3 | Q1 Source | Parallel source terminals to reduce source inductance and improve current sharing uniformity |
| Pin 4–5 | Q2 Drain | High-side drain node; connects to input bus rail and shares thermal pad with Q1 drain |
| Pin 6–7 | Q1 Drain | Low-side drain node; connects to output inductor and shares thermal pad with Q2 drain |
| Pin 8–9 | Q2 Source | High-side source node; serves as switch-node connection and gate driver high-side reference |
| Pin 10 | Q2 Gate | High-side gate control input; requires isolated or bootstrap gate driver with fast rise/fall capability |
Key Features
| Feature | Design Value |
|---|---|
| Symmetrical half-bridge topology | Matched RDS(on), Qg, and thermal characteristics between high- and low-side FETs ensure balanced switching timing and reduced shoot-through risk |
| Optimized for low-voltage gate drive | Guaranteed turn-on at VGS ≥ 4.5 V enables compatibility with 5 V microcontrollers and gate drivers without level-shifting |
| 100% avalanche tested | Each unit validated for EAS ≥ 313 mJ, eliminating need for external snubbers in inductive switching applications |
| Superior thermal resistance | RthJC = 0.6 °C/W allows >167 W power dissipation at TC = 25 °C, supporting compact heatsink integration |
Applications
| Server VRM Power Stage | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.6–1.2 V) at up to 600 A per phase. IC Role / Device Role / Timing Role: Dual N-channel half-bridge switch operating in synchronous rectification mode with 300–1000 kHz PWM frequency. Use Value: 1.6 mΩ RDS(on) and 0.6 °C/W RthJC reduce conduction and thermal losses, enabling >95% efficiency at full load without forced air cooling. | Use Scenario: Isolated or non-isolated step-down converter for programmable logic controllers (PLCs) and motor drives powered from 48 V telecom/industrial bus. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in interleaved buck or multiphase topology with adaptive dead-time control. Use Value: Symmetrical layout and matched parameters allow precise phase current balancing across parallel channels, improving system efficiency and reducing EMI. |
| Battery-Powered UPS Inverter | High-Frequency LLC Resonant Converter |
Use Scenario: Bidirectional 48 V–380 V DC-AC inverter stage in uninterruptible power supplies with Li-ion battery backup. IC Role / Device Role / Timing Role: Half-bridge leg in H-bridge inverter configuration, switching at 20–50 kHz with zero-voltage switching (ZVS) assist. Use Value: Integrated body diodes with 39 ns trr and 143 nC Qrr support reliable ZVS transition and minimize reverse recovery losses during commutation. | Use Scenario: Secondary-side synchronous rectifier in 300–500 kHz LLC resonant converter for data center power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in discontinuous conduction mode (DCM) with adaptive gate control. Use Value: 74 nC Qoss and 68 nC Qg enable fast turn-off and low switching loss at high frequency, increasing power density by >20% vs. discrete solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar symmetrical half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB061N06N3 G | Single N-channel 60 V TSDSO-8; RDS(on) = 0.61 mΩ but no integrated half-bridge layout | Requires external pairing and gate driver isolation; higher layout complexity and parasitic inductance | Preferred when discrete optimization or asymmetric topology (e.g., high-side + low-side with different specs) is required |
| IRFH7107TRPBF | Single N-channel 60 V PQFN-5x6; RDS(on) = 1.45 mΩ, Qg = 62 nC, but no symmetrical dual-die construction | Lacks matched timing and thermal coupling; unsuitable for true half-bridge phase-leg use without careful matching | Applicable only in non-critical, cost-sensitive applications where gate timing skew and thermal imbalance are acceptable |
Compared with IPB061N06N3 G and IRFH7107TRPBF, ISG0614N06NM5HATMA1 delivers superior system-level performance through monolithic symmetry, lower layout-induced losses, and guaranteed parameter matching-making it the optimal choice for high-reliability, high-frequency half-bridge power stages.
Availability
ISG0614N06NM5HATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, battery-powered UPS inverters, and high-frequency LLC resonant converters requiring stable component supply and long-term production continuity.
Supply support for ISG0614N06NM5HATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to JEDEC industrial standards.
This part belongs to the OptiMOSTM5 family, designed specifically for high-efficiency, high-current power conversion in server, telecom, and industrial SMPS where low RDS(on), fast switching, and thermal robustness are critical.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies a maximum junction temperature of 175 °C and defines continuous drain current de-rating curves versus case temperature. At TC = 100 °C, the rated ID drops to 165 A (VGS = 10 V). Thermal design must maintain TC ≤ 125 °C to avoid exceeding safe operating area limits under pulsed conditions.
Does this device require external gate resistors for stability?
Yes - the recommended external gate resistor (RG,ext) is 1.6 Ω for turn-on/turn-off timing validation per datasheet test conditions. Lower values increase dV/dt and risk oscillation; higher values slow switching and raise losses. Layout-dependent parasitics may necessitate fine-tuning between 1.0 Ω and 2.2 Ω for optimal EMI and efficiency trade-offs.
Can the internal body diodes be used for reverse polarity protection?
No - the internal body diodes are optimized for synchronous rectification and freewheeling, not reverse polarity protection. Their forward voltage (0.84 V) and limited surge rating make them unsuitable for sustained reverse-bias blocking. Dedicated reverse-polarity MOSFETs or TVS-based protection circuits are required for that function.
Is the PG-VITFN-10 package compatible with standard reflow profiles?
Yes - the package is qualified for lead-free reflow per J-STD-020, with peak temperature tolerance up to 260 °C for ≤ 30 seconds. Its copper-clip construction provides excellent thermal stability during soldering, but board layout must ensure symmetric thermal mass distribution across all drain pads to prevent warpage or voiding.
ISG0614N06NM5HATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 5
- Package/Case:
- 10-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 31A (Ta), 233A (Tc)
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.3V @ 86µA
- Gate Charge (Qg) (Max) @ Vgs:
- 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6400pF @ 30V
- Power - Max:
- 3W (Ta), 167W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VITFN-10-1
ISG0614N06NM5HATMA1 FAQ
1.How can I place an order for ISG0614N06NM5HATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISG0614N06NM5HATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISG0614N06NM5HATMA1 reliable?
The price and inventory of ISG0614N06NM5HATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISG0614N06NM5HATMA1 is usually 5 days.
3.What payment methods are accepted for ISG0614N06NM5HATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISG0614N06NM5HATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISG0614N06NM5HATMA1?
ISG0614N06NM5HATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISG0614N06NM5HATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISG0614N06NM5HATMA1?
For technical support, including ISG0614N06NM5HATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISG0614N06NM5HATMA1 requirements.
6.How does Aetrix verify that ISG0614N06NM5HATMA1 is sourced from the original manufacturer or authorized distributors?
All ISG0614N06NM5HATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISG0614N06NM5HATMA1 meets industry standards.
7.What is the process for return or replacement of ISG0614N06NM5HATMA1?
All ISG0614N06NM5HATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISG0614N06NM5HATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISG0614N06NM5HATMA1 part is unused and in its original packaging.
Return procedure for ISG0614N06NM5HATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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