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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies ISG0614N06NM5HSCATMA1

Name: ISG0614N06NM5HSCATMA1
Brand: Infineon Technologies
SKU: ISG0614N06NM5HSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISG0614N06NM5HSCATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 10-PowerWDFN

Datasheet:: ISG0614N06NM5HSCATMA1.pdf

Description:: MOSFET 2N-CH 60V 31A 10WHITFN

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Product details

Overview

ISG0614N06NM5HSCATMA1 from Infineon Technologies is a dual N-channel OptiMOSTM5 symmetrical half-bridge power MOSFET pair rated at 60 V, with R_DS(on) max of 1.6 mΩ, 233 A continuous drain current (T_C=25 °C), Q_g of 68 nC, and fully qualified for industrial applications. It integrates two matched high-current MOSFETs in one PG-WHITFN-10-1 package for synchronous buck, motor drive, and battery-powered DC-DC converters.

For engineers reviewing the ISG0614N06NM5HSCATMA1 datasheet, ISG0614N06NM5HSCATMA1 pinout, ISG0614N06NM5HSCATMA1 application, or ISG0614N06NM5HSCATMA1 equivalent, key selection factors include its symmetrical half-bridge topology, ultra-low R_DS(on), low Q_oss (74 nC), thermal resistance (R_thJC = 0.6 °C/W bottom), and integrated body diodes with 39 ns t_rr.

Technical Context

This device implements a monolithic symmetrical half-bridge configuration with two identical N-channel enhancement-mode MOSFETs sharing a common source connection per channel and isolated gate terminals. Its optimized charge characteristics-Q_gd = 13–19 nC and Q_sw = 20 nC-enable fast, low-loss switching in high-frequency SMPS topologies up to 1 MHz.

The integrated body diodes are rated for 148 A continuous forward current and exhibit tightly controlled reverse recovery (Q_rr = 143 nC, t_rr = 39 ns), supporting synchronous rectification without external Schottky diodes. Thermal design leverages dual heat-transfer paths: 0.6 °C/W junction-to-case (bottom) and 0.40 °C/W (top).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 12/24 V architectures.
R_DS(on), max	1.6 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 25 A, critical for high-efficiency power stages.
I_D, cont	233 A @ T_C = 25 °C - Supports high-current output stages without paralleling devices in compact converters.
Q_g	68 nC - Low gate drive energy reduces driver IC stress and enables efficient operation with 5–10 V logic-level gate drives.
Q_oss	74 nC - Minimizes turn-off loss during hard-switching, especially in high-side FET operation.
t_rr	39 ns - Enables clean zero-voltage switching (ZVS) transitions and reduces diode switching noise in synchronous buck.
R_thJC (bottom)	0.6 °C/W - Allows >150 W dissipation with modest heatsinking, supporting high-power density designs.

Pinout & Package

Package: PG-WHITFN-10-1 - 10-pin thermally enhanced wettable flank package with exposed copper drain pads on top and bottom for dual-sided cooling and automated optical solder inspection (AOI).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Q1 Source	Source terminal of lower MOSFET; tied internally to tab ground reference for half-bridge midpoint sensing.
Pins 2–3	Q1 Source	Parallel source connections for low-inductance, high-current return path to PCB ground plane.
Pin 4	Q2 Drain	Drain of upper MOSFET; connects to input bus rail and requires low-inductance layout for EMI control.
Pin 5	Q1 Gate	Control input for lower MOSFET; routed with matched length to minimize shoot-through risk.
Pins 6–7	Q1 Drain	Drain of lower MOSFET; forms half-bridge output node (switch node) with Q2 source.
Pins 8–9	Q2 Source	Source of upper MOSFET; electrically identical to switch node; used for bootstrap capacitor return.
Pin 10	Q2 Gate	Control input for upper MOSFET; isolated routing required to prevent coupling from high dV/dt switch node.
Tab	Q1 Drain / Q2 Source	Internally connected to both drains/sources - defines the half-bridge output (SW) node and serves as primary thermal path.

Key Features

Feature	Design Value
Symmetrical half-bridge topology	Two matched 60 V/233 A N-channel MOSFETs in one package eliminate layout mismatch and timing skew between high- and low-side switches.
Ultra-low R_DS(on)	1.6 mΩ max enables <0.5 W conduction loss at 50 A, reducing thermal load and enabling smaller heatsinks in 1–3 kW converters.
Optimized gate charge profile	Q_gd/Q_g ratio of ~20% ensures stable Miller plateau behavior and robust immunity to false turn-on in high dV/dt environments.
100% avalanche tested	Rated for single-pulse EAS = 313 mJ - guarantees ruggedness against inductive switching transients without derating.
Thermally enhanced wettable flank	PG-WHITFN-10-1 package supports dual-sided cooling and automated AOI, improving manufacturing yield and long-term thermal reliability.

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V–12 V point-of-load conversion for CPU/GPU core supplies in AI accelerators and cloud servers.

IC Role / Device Role / Timing Role: Dual-channel synchronous buck power stage delivering up to 300 A per phase with <100 ns dead-time control.

Use Value: 1.6 mΩ R_DS(on) and 0.6 °C/W R_thJC enable >95% efficiency at 200 A while maintaining junction temperature <110 °C under full load.

Use Scenario: 24–48 V BLDC motor inverter for collaborative robots and precision CNC axes.

IC Role / Device Role / Timing Role: Half-bridge output stage driving three-phase motor windings with 100 kHz PWM and active freewheeling.

Use Value: Matched Q_g (68 nC) and t_rr (39 ns) ensure balanced switching transitions across all six half-bridges, minimizing torque ripple and acoustic noise.

Battery-Powered Tools

Telecom DC-DC Modules

Use Scenario: 18–60 V cordless power tool battery packs powering brushless motor controllers.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling peak loads >500 A during stall conditions with integrated body diode freewheeling.

Use Value: 932 A pulsed current rating and 148 A diode forward current allow sustained burst operation without external diodes or paralleling.

Use Scenario: 54 V input telecom rectifier modules converting to 12 V/48 V intermediate bus in 5G base station power systems.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge or LLC resonant converter.

Use Value: Low Q_oss (74 nC) and tight C_oss tolerance (1110–1440 pF) support ZVS over wide load range, reducing switching loss by >30% vs. discrete solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar symmetrical half-bridge MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB061N06N5ATMA1	Single-channel 60 V OptiMOSTM5 MOSFET (1.6 mΩ, 233 A); no integrated half-bridge topology.	Requires external pairing and careful layout to match timing/thermal symmetry; higher board area and gate drive complexity.	Select when discrete control of each switch is needed or when asymmetrical duty cycles demand independent gate optimization.
IRFH7185TRPBF	60 V dual N-channel SO-8 package (2.1 mΩ, 100 A); lacks symmetrical pinout, higher R_thJA (50 °C/W), no avalanche rating.	Limited to <150 W applications; unsuitable for industrial ambient or high-reliability 24/7 operation due to thermal and ruggedness constraints.	Select only for cost-sensitive, low-power (<50 W) consumer-grade DC-DC where space is less constrained than thermal margin.

Compared with IPB061N06N5ATMA1 and IRFH7185TRPBF, ISG0614N06NM5HSCATMA1 delivers superior thermal performance (0.6 °C/W vs. >1.2 °C/W), guaranteed symmetry, and industrial qualification-making it the preferred choice for high-power, high-reliability half-bridge implementations where layout simplicity and system-level efficiency are prioritized.

Availability

ISG0614N06NM5HSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, battery-powered tools, and telecom DC-DC modules requiring stable component supply, long lifecycle support, and consistent parametric performance across production batches.

Supply support for ISG0614N06NM5HSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with over 30 years of high-reliability power device innovation and ISO/TS 16949-certified manufacturing.

This device belongs to the OptiMOSTM5 Power-Transistor family-engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and battery-powered systems demanding low R_DS(on), fast switching, and rugged avalanche capability.

FAQ

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For robust design, gate drive should be clamped to +12 V (turn-on) and –5 V (active miller clamp) using dedicated gate drivers like the 1EDN7512B, ensuring safe linear region avoidance and ESD immunity.

Can this device be used in non-synchronous configurations?

Yes-it supports non-synchronous operation by disabling one channel and using its internal body diode as a freewheeling path. However, the diode's V_SD = 0.84 V (at 50 A, 25 °C) results in higher conduction loss than an external Schottky; synchronous mode is strongly recommended for >10 A loads to maintain >93% efficiency.

How does the PG-WHITFN-10-1 package improve thermal performance over standard SO-8 or PQFN?

PG-WHITFN-10-1 provides dual thermal paths: 0.6 °C/W (junction-to-case bottom) and 0.40 °C/W (junction-to-case top), versus >1.5 °C/W for SO-8. Its exposed copper tabs on both sides enable simultaneous top-side heatsink attachment and bottom-side PCB copper pour, reducing total thermal resistance by up to 65% in real-world layouts.

Is the internal body diode suitable for reverse recovery-critical applications like PFC?

No-the body diode has t_rr = 39 ns and Q_rr = 143 nC, which is acceptable for synchronous buck but insufficient for continuous conduction mode (CCM) PFC where t_rr < 25 ns and Q_rr < 50 nC are typically required. Use dedicated SiC Schottky diodes or cascode GaN FETs for PFC stages.

ISG0614N06NM5HSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 10-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Half Bridge)

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 233A (Tc)

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 86µA

Gate Charge (Qg) (Max) @ Vgs:: 102nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 6400pF @ 30V

Power - Max:: 3W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WHITFN-10-1

ISG0614N06NM5HSCATMA1 FAQ

1.How can I place an order for ISG0614N06NM5HSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISG0614N06NM5HSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISG0614N06NM5HSCATMA1 reliable?

The price and inventory of ISG0614N06NM5HSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISG0614N06NM5HSCATMA1 is usually 5 days.

3.What payment methods are accepted for ISG0614N06NM5HSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISG0614N06NM5HSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISG0614N06NM5HSCATMA1?

ISG0614N06NM5HSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISG0614N06NM5HSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISG0614N06NM5HSCATMA1?

For technical support, including ISG0614N06NM5HSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISG0614N06NM5HSCATMA1 requirements.

6.How does Aetrix verify that ISG0614N06NM5HSCATMA1 is sourced from the original manufacturer or authorized distributors?

All ISG0614N06NM5HSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISG0614N06NM5HSCATMA1 meets industry standards.

7.What is the process for return or replacement of ISG0614N06NM5HSCATMA1?

All ISG0614N06NM5HSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISG0614N06NM5HSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISG0614N06NM5HSCATMA1 part is unused and in its original packaging.

Return procedure for ISG0614N06NM5HSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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