Infineon Technologies ISG0616N10NM5HSCATMA1

Overview

ISG0616N10NM5HSC from Infineon Technologies is a dual N-channel 100 V OptiMOSTM5 symmetrical half-bridge power MOSFET pair in a single PG-WHITFN-10-1 package, featuring R_DS(on) = 4.0 mΩ max at V_GS = 10 V, Q_g = 52 nC, and 100% avalanche-tested ruggedness for high-efficiency DC-DC converters in battery-powered systems.

For engineers reviewing the ISG0616N10NM5HSC datasheet, ISG0616N10NM5HSC pinout, ISG0616N10NM5HSC application, or ISG0616N10NM5HSC equivalent, key selection criteria include its dual-source-drain symmetry, low gate charge for 6–10 V drive compatibility, thermal resistance (R_thJC = 0.6 °C/W bottom), integrated body diodes with t_rr = 39 ns, and industrial-grade JEDEC qualification.

Technical Context

This device integrates two matched N-channel enhancement-mode MOSFETs in a monolithic half-bridge configuration with shared source terminals (Pins 2 & 3 for Q1; Pins 8 & 9 for Q2) and isolated gate inputs (Pin 5 for Q1, Pin 10 for Q2), enabling synchronous buck, active clamp, and motor phase-leg topologies without external cross-conduction protection.

Its optimized charge profile-Q_gd = 11–16 nC, Q_oss = 68 nC, and V_plateau = 4.6 V-supports fast, low-loss switching at 500 kHz+ in high-density SMPS, while the 0.40–0.86 °C/W top-side thermal path allows direct heatsink mounting via the exposed tab (Pin 1, drain of Q1; tab also serves as Q2 drain).

Key Specifications

Pinout & Package

Package: PG-WHITFN-10-1 - thermally enhanced 10-pin wettable flank TSDSON with exposed copper drain pads on both top and bottom surfaces for dual-side cooling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar symmetrical half-bridge MOSFET applications.

Compared with IPB061N10N5ATMA1 and IRFH7107TRPBF, ISG0616N10NM5HSC delivers 33% lower conduction loss per switch, eliminates layout-induced timing skew, and guarantees avalanche ruggedness-critical for unregulated input or motor back-EMF handling.

Availability

ISG0616N10NM5HSC is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, battery-powered motor drives, and industrial SMPS requiring stable component supply, JEDEC-qualified reliability, and dual-side thermal management.

Supply support for ISG0616N10NM5HSC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM5 product line-designed specifically for high-frequency, high-efficiency power conversion in space-constrained and thermally demanding applications such as server PSUs, EV chargers, and portable industrial tools.

FAQ

What is the maximum continuous drain current for each MOSFET in the ISG0616N10NM5HSC half-bridge?

Each MOSFET supports 139 A continuous drain current at T_C = 25 °C with V_GS = 10 V. Derating applies above 25 °C: current drops to 99 A at T_C = 100 °C and 19 A at T_A = 25 °C with R_thJA = 50 °C/W. The dual-source configuration (Pins 2–3 and 8–9) must be routed with equal copper area to maintain current sharing.

Can the ISG0616N10NM5HSC be used with 5 V gate drive?

Yes-the V_GS(th) range is 2.2–3.8 V, and R_DS(on) remains ≤5.5 mΩ at V_GS = 6 V and I_D = 25 A. However, full 4.0 mΩ performance requires V_GS ≥10 V. For 5 V drive, expect ~15% higher conduction loss and verify gate driver peak current capability ≥2 A due to Q_g = 52 nC.

How is thermal management implemented on the PG-WHITFN-10-1 package?

The package features two exposed copper pads: Pin 1 (tab) serves as Q1 drain and bottom thermal interface; Pins 6–7 serve as Q2 drain and top thermal interface. R_thJC is 0.6 °C/W (bottom) and 0.40 °C/W (top), enabling simultaneous heatsinking from PCB and external cooler. Thermal vias under Pin 1 and solder paste coverage on top pads are mandatory for rated power handling.

Does the ISG0616N10NM5HSC include body diodes, and what are their key parameters?

Yes-each MOSFET integrates a co-packaged body diode. Key specs: V_SD = 0.85–1.0 V at I_F = 50 A and T_j = 25 °C; t_rr = 39 ns; Q_rr = 210 nC; and I_S,pulse = 556 A. These diodes are fully rated for synchronous rectification and do not require external Schottky replacements in most 500 kHz designs.