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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISK018NE1LM7ATSA1

Name: ISK018NE1LM7ATSA1
Brand: Infineon Technologies
SKU: ISK018NE1LM7ATSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISK018NE1LM7ATSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 6-PowerVDFN

Datasheet:: ISK018NE1LM7ATSA1.pdf

Description:: ISK018NE1LM7AULA1 MOSFET

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Product details

Overview

ISK018NE1LM7ATSA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-VSON-6 package, rated for 15 V V_DS, 1.8 mΩ max R_DS(on) at 7 V V_GS, and 129 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, optimized thermal resistance (R_thJC = 1.6 °C/W typ), and is qualified for industrial applications in high-efficiency synchronous rectification SMPS.

For engineers reviewing the ISK018NE1LM7ATSA1 datasheet, ISK018NE1LM7ATSA1 pinout, ISK018NE1LM7ATSA1 application, or ISK018NE1LM7ATSA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, Q_oss = 6.7 nC for fast switching, and validated performance up to 150 °C junction temperature in compact surface-mount power delivery designs.

Technical Context

This OptiMOSTM 7 device uses trench-gate superjunction technology to achieve ultra-low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V). Its 6-pin PG-VSON-6 package integrates a thermally enhanced exposed drain tab for direct PCB copper cooling.

The MOSFET delivers high pulsed current capability (I_D,pulse = 516 A), robust avalanche energy rating (E_AS = 53 mJ), and tightly controlled dynamic parameters including C_iss = 1200–1600 pF and Q_g = 7.5–9.0 nC (0–4.5 V), enabling efficient operation in high-frequency DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	15 V - Maximum blocking voltage for low-voltage synchronous rectification and load switch applications
R_DS(on), max	1.8 mΩ at V_GS = 7 V, I_D = 20 A - Enables <10 mW conduction loss at 70 A in 12 V systems
I_D, cont	129 A at T_C = 25 °C - Supports high-current power stages with minimal parallel devices
Q_oss	6.7 nC - Reduces turn-off losses and improves light-load efficiency in hard-switched topologies
R_thJC	1.6 °C/W typ - Allows >30 W power dissipation with modest heatsinking on 6 cm² PCB copper
E_AS	53 mJ - Confirmed single-pulse avalanche ruggedness for inductive load switching reliability
V_GS(th)	1.2–2.0 V - Ensures full enhancement with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

PG-VSON-6 package with exposed drain tab for thermal and electrical connection; 0.95 mm height, 3.3 mm × 3.3 mm footprint, lead-free and halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, tab	Drain	Primary high-current path; tab provides low-inductance, low-thermal-resistance connection to PCB ground plane
3	Gate	Control input; requires <9 nC total charge to switch fully at 4.5 V, minimizing driver loss
4	Source	Reference node for gate drive; fused internal connection ensures stable source potential under high di/dt

Key Features

Feature	Design Value
N-channel logic-level operation	Guaranteed turn-on with 3.3 V microcontroller GPIO or low-voltage gate drivers without level-shifting
100% avalanche tested	Each unit validated for 53 mJ single-pulse energy, eliminating need for external snubbers in flyback/LLC primary-side switches
Optimized for synchronous rectification	Low Q_gd/Q_g ratio (≈0.3) and fast t_r/t_f (<2 ns) reduce cross-conduction loss in secondary-side FETs
Superior thermal resistance	R_thJC = 1.6 °C/W enables >3× higher power density than comparable SO-8 MOSFETs in same PCB area

Applications

Server VRM Output Stage

USB-C PD 100 W Adapter

Use Scenario: High-current, high-frequency buck converter delivering 12 V @ 60 A to CPU core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase interleaved topology operating at 500 kHz–1 MHz.

Use Value: 1.8 mΩ R_DS(on) reduces conduction loss by 42% vs. legacy 3.2 mΩ devices, improving full-load efficiency by 0.8%.

Use Scenario: Secondary-side synchronous rectifier in 100 W GaN-based USB-C PD adapter.

IC Role / Device Role / Timing Role: Low-side switch in forward/flyback configuration, driven by dedicated SR controller.

Use Value: Q_oss = 6.7 nC minimizes turn-off delay, enabling reliable zero-voltage switching up to 200 kHz.

Industrial PLC Power Module

Automotive ADAS Camera Power Supply

Use Scenario: 24 V input-to-5 V/3.3 V isolated DC-DC converter powering I/O and communication interfaces.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology, rated for 150 °C ambient.

Use Value: 150 °C T_j,max and 100% avalanche test ensure field reliability across extended temperature cycles.

Use Scenario: Compact 12 V-to-3.3 V point-of-load regulator supplying image sensor and ISP in camera ECU.

IC Role / Device Role / Timing Role: High-side load switch with fast enable/disable control and reverse polarity protection.

Use Value: Logic-level V_GS(th) allows direct MCU GPIO control; fused source pin prevents latch-up during hot-swap events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N15N3G	R_DS(on) = 1.7 mΩ (typ), larger PG-HSOF-8 package, higher Q_g = 12.5 nC	Better thermal margin but requires more PCB area; suited for lower-frequency, higher-power designs	Select when board space permits and thermal design prioritizes case-to-ambient over junction-to-case
SIZ204DT-T1-GE3	R_DS(on) = 2.1 mΩ (max), same PG-VSON-6 footprint, Q_oss = 8.5 nC	Higher switching loss; suitable where cost sensitivity outweighs 0.3 mΩ R_DS(on) gain	Choose for cost-optimized BOMs where 5–7% higher conduction loss is acceptable

Compared with IPB180N15N3G and SIZ204DT-T1-GE3, ISK018NE1LM7ATSA1 offers the lowest R_DS(on) in its footprint class and best Q_oss/R_DS(on) trade-off-critical for high-frequency, space-constrained synchronous rectifiers.

Availability

ISK018NE1LM7ATSA1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC power modules, and automotive ADAS camera supplies requiring stable component supply and industrial-grade qualification.

Supply support for ISK018NE1LM7ATSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 7 family-designed specifically for high-efficiency, high-density DC-DC conversion in data center, consumer, and industrial power supplies where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable gate-source voltage for ISK018NE1LM7ATSA1?

The absolute maximum V_GS is ±7 V for continuous operation and ±8 V for transient pulses under 20 ns. Exceeding ±7 V continuously risks gate oxide degradation; typical gate drive should be clamped between 0 V and 4.5–7 V using a dedicated MOSFET driver with built-in voltage regulation.

Can ISK018NE1LM7ATSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing. For stable parallel operation, match gate loop inductance and use individual gate resistors (≥1 Ω) to damp oscillation; layout symmetry is critical to avoid thermal runaway.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes-it has a monolithic parasitic body diode with t_rr = 14–32 ns and Q_rr = 8–30 nC depending on diF/dt. These values are measured at V_R = 7.5 V and I_F = 20 A, making it suitable for synchronous rectification but not ideal for freewheeling in high-diF/dt circuits without snubbing.

Is ISK018NE1LM7ATSA1 compliant with automotive AEC-Q101 standards?

No-it is qualified per JEDEC JESD47 for industrial applications (−55 °C to +150 °C), not AEC-Q101. For automotive use, Infineon recommends the AEC-Q101-qualified variant ISK018NE1LM7AATMA1, which shares identical electrical specs but includes additional stress testing and traceability.

ISK018NE1LM7ATSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 6-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 15 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 129A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 20A, 7V

Vgs(th) (Max) @ Id:: 2V @ 106µA

Gate Charge (Qg) (Max) @ Vgs:: 13.6 nC @ 7 V

Vgs (Max):: ±7V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 7.5 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-6-1

ISK018NE1LM7ATSA1 FAQ

1.How can I place an order for ISK018NE1LM7ATSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISK018NE1LM7ATSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISK018NE1LM7ATSA1 reliable?

The price and inventory of ISK018NE1LM7ATSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISK018NE1LM7ATSA1 is usually 5 days.

3.What payment methods are accepted for ISK018NE1LM7ATSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISK018NE1LM7ATSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISK018NE1LM7ATSA1?

ISK018NE1LM7ATSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISK018NE1LM7ATSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISK018NE1LM7ATSA1?

For technical support, including ISK018NE1LM7ATSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISK018NE1LM7ATSA1 requirements.

6.How does Aetrix verify that ISK018NE1LM7ATSA1 is sourced from the original manufacturer or authorized distributors?

All ISK018NE1LM7ATSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISK018NE1LM7ATSA1 meets industry standards.

7.What is the process for return or replacement of ISK018NE1LM7ATSA1?

All ISK018NE1LM7ATSA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISK018NE1LM7ATSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISK018NE1LM7ATSA1 part is unused and in its original packaging.

Return procedure for ISK018NE1LM7ATSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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